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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType
VS-GBPC2508A

VS-GBPC2508A

BRIDGE RECT 1P 800V 25A GBPC-A

Vishay General Semiconductor - Diodes Division

3588 6.97
- +

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Немедленный

VS-GBPC2508A

Datenblatt

Tray VS-GBPC Active Single Phase Standard 800 V 25 A - 2 mA @ 800 V -55°C ~ 150°C (TJ) QC Terminal
VS-GBPC2506W

VS-GBPC2506W

BRIDGE RECT 1P 600V 25A GBPC-W

Vishay General Semiconductor - Diodes Division

2218 6.97
- +

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Немедленный

VS-GBPC2506W

Datenblatt

Bulk VS-GBPC Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 2 mA @ 600 V -55°C ~ 150°C (TJ) Through Hole
VS-GBPC2510A

VS-GBPC2510A

BRIDGE RECT 1P 1KV 25A GBPC-A

Vishay General Semiconductor - Diodes Division

3197 7.12
- +

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Немедленный

VS-GBPC2510A

Datenblatt

Tray VS-GBPC Active Single Phase Standard 1 kV 25 A - 2 mA @ 1 V -55°C ~ 150°C (TJ) QC Terminal
VS-GBPC2512A

VS-GBPC2512A

BRIDGE RECT 1P 1.2KV 25A GBPC-A

Vishay General Semiconductor - Diodes Division

3332 7.32
- +

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Немедленный

VS-GBPC2512A

Datenblatt

Tray VS-GBPC Active Single Phase Standard 1.2 kV 25 A - 2 mA @ 1.2 V -55°C ~ 150°C (TJ) QC Terminal
VS-GBPC2512W

VS-GBPC2512W

BRIDGE RECT 1P 1.2KV 25A GBPC-W

Vishay General Semiconductor - Diodes Division

3067 7.47
- +

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Немедленный

VS-GBPC2512W

Datenblatt

Bulk VS-GBPC Active Single Phase Standard 1.2 kV 25 A 1.1 V @ 12.5 A 2 mA @ 1200 V -55°C ~ 150°C (TJ) Through Hole
VS-26MB05A

VS-26MB05A

BRIDGE RECT 1PHASE 50V 25A D-34

Vishay General Semiconductor - Diodes Division

3341 7.51
- +

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Немедленный

VS-26MB05A

Datenblatt

Bulk - Active Single Phase Standard 50 V 25 A - 10 µA @ 50 V -40°C ~ 150°C (TJ) QC Terminal
GBPC1506W-E4/51

GBPC1506W-E4/51

BRIDGE RECT 1P 600V 15A GBPC-W

Vishay General Semiconductor - Diodes Division

180 5.30
- +

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Немедленный

GBPC1506W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 600 V 15 A 1.1 V @ 7.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
VS-GBPC3510W

VS-GBPC3510W

BRIDGE RECT 1P 1KV 35A GBPC-W

Vishay General Semiconductor - Diodes Division

3505 7.76
- +

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Немедленный

VS-GBPC3510W

Datenblatt

Tray VS-GBPC Active Single Phase Standard 1 kV 35 A - 2 mA @ 1 V -55°C ~ 150°C (TJ) Through Hole
VS-GBPC3512W

VS-GBPC3512W

BRIDGE RECT 1P 1.2KV 35A GBPC-W

Vishay General Semiconductor - Diodes Division

3500 7.91
- +

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Немедленный

VS-GBPC3512W

Datenblatt

Bulk VS-GBPC Active Single Phase Standard 1.2 kV 35 A - 2 mA @ 1.2 V -55°C ~ 150°C (TJ) Through Hole
VS-36MB05A

VS-36MB05A

BRIDGE RECT 1PHASE 50V 35A D-34

Vishay General Semiconductor - Diodes Division

2984 7.95
- +

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Немедленный

VS-36MB05A

Datenblatt

Bulk - Active Single Phase Standard 50 V 35 A - 10 µA @ 1600 V -40°C ~ 150°C (TJ) QC Terminal
VS-36MB10A

VS-36MB10A

BRIDGE RECT 1PHASE 100V 35A D-34

Vishay General Semiconductor - Diodes Division

3367 8.33
- +

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Немедленный

VS-36MB10A

Datenblatt

Bulk - Active Single Phase Standard 100 V 35 A - 10 µA @ 100 V -40°C ~ 150°C (TJ) QC Terminal
GBPC3502W-E4/51

GBPC3502W-E4/51

BRIDGE RECT 1P 200V 35A GBPC-W

Vishay General Semiconductor - Diodes Division

2422 5.89
- +

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Немедленный

GBPC3502W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 200 V 35 A 1.1 V @ 17.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
VS-36MB20A

VS-36MB20A

BRIDGE RECT 1PHASE 200V 35A D-34

Vishay General Semiconductor - Diodes Division

3156 8.46
- +

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Немедленный

VS-36MB20A

Datenblatt

Bulk - Active Single Phase Standard 200 V 35 A - 10 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal
VS-36MB40A

VS-36MB40A

BRIDGE RECT 1PHASE 400V 35A D-34

Vishay General Semiconductor - Diodes Division

2513 8.55
- +

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Немедленный

VS-36MB40A

Datenblatt

Bulk - Active Single Phase Standard 400 V 35 A - 10 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal
VS-36MB60A

VS-36MB60A

BRIDGE RECT 1PHASE 600V 35A D-34

Vishay General Semiconductor - Diodes Division

3401 8.72
- +

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Немедленный

VS-36MB60A

Datenblatt

Bulk - Active Single Phase Standard 600 V 35 A - 10 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal
VS-36MB80A

VS-36MB80A

BRIDGE RECT 1PHASE 800V 35A D-34

Vishay General Semiconductor - Diodes Division

2672 8.78
- +

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Немедленный

VS-36MB80A

Datenblatt

Bulk - Active Single Phase Standard 800 V 35 A - 10 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal
GBPC3502-E4/51

GBPC3502-E4/51

BRIDGE RECT 1PHASE 200V 35A GBPC

Vishay General Semiconductor - Diodes Division

156 6.13
- +

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Немедленный

GBPC3502-E4/51

Datenblatt

Bulk - Active Single Phase Standard 200 V 35 A 1.1 V @ 17.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal
GBPC3504-E4/51

GBPC3504-E4/51

BRIDGE RECT 1PHASE 400V 35A GBPC

Vishay General Semiconductor - Diodes Division

200 6.13
- +

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Немедленный

GBPC3504-E4/51

Datenblatt

Bulk - Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal
VS-26MB40A

VS-26MB40A

BRIDGE RECT 1PHASE 400V 25A D-34

Vishay General Semiconductor - Diodes Division

3100 9.01
- +

Добавить

Немедленный

VS-26MB40A

Datenblatt

Bulk - Active Single Phase Standard 400 V 25 A - 10 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal
VS-26MB80A

VS-26MB80A

BRIDGE RECT 1PHASE 800V 25A D-34

Vishay General Semiconductor - Diodes Division

3961 9.53
- +

Добавить

Немедленный

VS-26MB80A

Datenblatt

Bulk - Active Single Phase Standard 800 V 25 A - 10 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal
Total 8096 Records«Prev1... 949596979899100101...405Next»
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