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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType
GBPC2501W-E4/51

GBPC2501W-E4/51

BRIDGE RECT 1P 100V 25A GBPC-W

Vishay General Semiconductor - Diodes Division

3003 5.30
- +

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Немедленный

GBPC2501W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 100 V 25 A 1.1 V @ 12.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole
GBPC2510W-E4/51

GBPC2510W-E4/51

BRIDGE RECT 1P 1KV 25A GBPC-W

Vishay General Semiconductor - Diodes Division

2422 5.30
- +

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Немедленный

GBPC2510W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
GSIB2580N-M3/45

GSIB2580N-M3/45

BRIDGE RECT 1P 800V 25A GSIB-5S

Vishay General Semiconductor - Diodes Division

3101 3.80
- +

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Немедленный

GSIB2580N-M3/45

Datenblatt

Tube - Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
GBPC2506

GBPC2506

BRIDGE RECT 1PHASE 600V 25A GBPC

SMC Diode Solutions

2237 3.92
- +

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Немедленный

GBPC2506

Datenblatt

Bulk - Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal
GBPC3506W

GBPC3506W

BRIDGE RECT 1P 600V 35A GBPC-W

SMC Diode Solutions

3885 3.92
- +

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Немедленный

GBPC3506W

Datenblatt

Bulk - Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
GBPC1508

GBPC1508

BRIDGE RECT 1PHASE 800V 15A GBPC

onsemi

2055 5.67
- +

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GBPC1508

Datenblatt

Bulk - Active Single Phase Standard 800 V 15 A 1.1 V @ 7.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal
GBPC2508W

GBPC2508W

BRIDGE RECT 1P 800V 25A GBPC-W

onsemi

2714 5.88
- +

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Немедленный

GBPC2508W

Datenblatt

Bulk - Active Single Phase Standard 800 V 25 A 1.1 V @ 1.2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
GBPC3504W-E4/51

GBPC3504W-E4/51

BRIDGE RECT 1P 400V 35A GBPC-W

Vishay General Semiconductor - Diodes Division

3914 5.89
- +

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Немедленный

GBPC3504W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole
GBPC3501W-E4/51

GBPC3501W-E4/51

BRIDGE RECT 1P 100V 35A GBPC-W

Vishay General Semiconductor - Diodes Division

3426 5.89
- +

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Немедленный

GBPC3501W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 100 V 35 A 1.1 V @ 17.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole
GBPC2506W

GBPC2506W

BRIDGE RECT 1P 600V 25A GBPC-W

onsemi

3391 5.95
- +

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Немедленный

GBPC2506W

Datenblatt

Tray - Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
GBPC3501-E4/51

GBPC3501-E4/51

BRIDGE RECT 1PHASE 100V 35A GBPC

Vishay General Semiconductor - Diodes Division

2676 6.13
- +

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Немедленный

GBPC3501-E4/51

Datenblatt

Bulk - Active Single Phase Standard 100 V 35 A 1.1 V @ 17.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) QC Terminal
GBPC3508-E4/51

GBPC3508-E4/51

BRIDGE RECT 1PHASE 800V 35A GBPC

Vishay General Semiconductor - Diodes Division

3207 6.13
- +

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Немедленный

GBPC3508-E4/51

Datenblatt

Bulk - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal
GBPC1501W

GBPC1501W

BRIDGE RECT 1P 100V 15A GBPC-W

onsemi

2007 6.27
- +

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Немедленный

GBPC1501W

Datenblatt

Tray - Active Single Phase Standard 100 V 15 A 1.1 V @ 7.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole
GBPC2501W

GBPC2501W

BRIDGE RECT 1P 100V 25A GBPC-W

onsemi

2414 6.32
- +

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Немедленный

GBPC2501W

Datenblatt

Tray - Active Single Phase Standard 100 V 25 A 1.1 V @ 7.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole
GBPC3502W

GBPC3502W

BRIDGE RECT 1P 200V 35A GBPC-W

onsemi

2051 6.60
- +

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Немедленный

GBPC3502W

Datenblatt

Bulk,Bulk - Active Single Phase Standard 200 V 35 A 1.1 V @ 17.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
GBPC1202

GBPC1202

BRIDGE RECT 1PHASE 200V 12A GBPC

onsemi

3012 6.67
- +

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Немедленный

GBPC1202

Datenblatt

Bulk - Active Single Phase Standard 200 V 12 A 1.1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal
GBPC2510W

GBPC2510W

BRIDGE RECT 1P 1KV 25A GBPC-W

onsemi

2906 6.71
- +

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Немедленный

GBPC2510W

Datenblatt

Bulk - Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
VS-GBPC2504A

VS-GBPC2504A

BRIDGE RECT 1P 400V 25A GBPC-A

Vishay General Semiconductor - Diodes Division

3495 6.77
- +

Добавить

Немедленный

VS-GBPC2504A

Datenblatt

Tray VS-GBPC Active Single Phase Standard 400 V 25 A - 2 mA @ 400 V -55°C ~ 150°C (TJ) QC Terminal
VS-GBPC2506A

VS-GBPC2506A

BRIDGE RECT 1P 600V 25A GBPC-A

Vishay General Semiconductor - Diodes Division

2756 6.87
- +

Добавить

Немедленный

VS-GBPC2506A

Datenblatt

Tray VS-GBPC Active Single Phase Standard 600 V 25 A - 2 mA @ 600 V -55°C ~ 150°C (TJ) QC Terminal
VS-GBPC2504W

VS-GBPC2504W

BRIDGE RECT 1P 400V 25A GBPC-W

Vishay General Semiconductor - Diodes Division

3297 6.87
- +

Добавить

Немедленный

VS-GBPC2504W

Datenblatt

Tray VS-GBPC Active Single Phase Standard 400 V 25 A - 2 mA @ 400 V -55°C ~ 150°C (TJ) Through Hole
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