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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7495PBF

IRF7495PBF

HEXFET POWER MOSFET

International Rectifier

2243 1.00
- +

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 7.3A (Ta) 10V 22mOhm @ 4.4A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 1530 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR3710ZTRL

AUIRFR3710ZTRL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

3704 1.00
- +

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AUIRFR3710ZTRL

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) - 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V - 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN4R3-100ES,127

PSMN4R3-100ES,127

TRANSISTOR >30MHZ

NXP USA Inc.

3790 1.00
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 4.5V, 10V 4.3mOhm @ 25A, 10V 4V @ 1mA 170 nC @ 10 V ±20V 9900 pF @ 50 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSZ042N04NSG

BSZ042N04NSG

MOSFET N-CH 40V 40A TO220AB

Infineon Technologies

3838 1.00
- +

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BSZ042N04NSG

Datenblatt

Bulk OptiMOS™ 3 Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) - 4.2mOhm @ 20A, 10V 4V @ 36µA 46 nC @ 10 V ±20V 3700 pF @ 20 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL4310ZPBF

IRFSL4310ZPBF

IRFSL4310 - HEXFET POWER MOSFET

International Rectifier

3822 1.00
- +

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IRFSL4310ZPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7834TRPBF

IRF7834TRPBF

HEXFET POWER MOSFET

International Rectifier

3595 1.00
- +

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Немедленный

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta) 4.5V, 10V 4.5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMPB20XNEA,115

PMPB20XNEA,115

7.5A, 20V, N CHANNEL, SILICON, M

Nexperia USA Inc.

2509 1.00
- +

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PMPB20XNEA,115

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
PMN80XP,115

PMN80XP,115

MOSFET P-CH 20V 2.5A 6TSOP

NXP USA Inc.

3758 1.00
- +

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PMN80XP,115

Datenblatt

Bulk TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) - 102mOhm @ 2.5A, 4.5V 1V @ 250µA 7.5 nC @ 4.5 V ±12V 550 pF @ 10 V - 385mW (Ta), 4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
P2N2369ZL1G

P2N2369ZL1G

SS T092 GP XSTR NPN SPCL

onsemi

3265 1.00
- +

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Немедленный

Bulk * Active - - - - - - - - - - - - - -
IRF6898MTRPBF

IRF6898MTRPBF

MOSFET N-CH 25V 40A/214A DIRECT

International Rectifier

3053 1.00
- +

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IRF6898MTRPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 40A (Ta), 214A (Tc) - 1.1mOhm @ 40A, 10V 2.1V @ 100µA 68 nC @ 4.5 V ±16V 5630 pF @ 13 V Schottky Diode (Body) 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
NP89N055PUK-E1-AY

NP89N055PUK-E1-AY

MOSFET N-CH 55V 90A TO263-3

Renesas Electronics America Inc

3466 2.34
- +

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Немедленный

NP89N055PUK-E1-AY

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 55 V 90A (Tc) 10V 4mOhm @ 45A, 10V 4V @ 250µA 102 nC @ 10 V ±20V 6000 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C (TJ) Surface Mount
IRFS3006-7PPBF

IRFS3006-7PPBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier

2175 1.00
- +

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Немедленный

IRFS3006-7PPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STD95P3LLH6AG

STD95P3LLH6AG

MOSFET N-CH 30V 80A DPAK

STMicroelectronics

2474 2.58
- +

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Немедленный

Tape & Reel (TR),Cut Tape (CT) STripFET™ H6 Active - - - 80A (Tj) - - - - - - - - - -
IRFS4310TRRPBF

IRFS4310TRRPBF

MOSFET N-CH 100V 130A TO263-3-2

International Rectifier

3845 1.00
- +

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Немедленный

IRFS4310TRRPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) - 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4010-7TRL

AUIRFS4010-7TRL

MOSFET N-CH 100V 180A TO263

International Rectifier

3805 1.00
- +

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Немедленный

AUIRFS4010-7TRL

Datenblatt

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) - 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8743PBF

IRLR8743PBF

IRLR8743 - HEXFET POWER MOSFET

International Rectifier

3487 1.00
- +

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Немедленный

IRLR8743PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 25A, 10V 2.35V @ 100µA 59 nC @ 4.5 V ±20V 4880 pF @ 15 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8408-7P

AUIRFS8408-7P

MOSFET N-CH 40V 195A D2PAK

International Rectifier

2024 1.00
- +

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Немедленный

AUIRFS8408-7P

Datenblatt

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) - 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLS3036-7PPBF

IRLS3036-7PPBF

IRLS3036 - HEXFET POWER MOSFET

International Rectifier

3655 1.00
- +

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Немедленный

IRLS3036-7PPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 4.5V, 10V 1.9mOhm @ 180A, 10V 2.5V @ 250µA 160 nC @ 4.5 V ±16V 11270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS5C426NLT1G

NTMFS5C426NLT1G

SINGLE N-CHANNEL POWER MOSFET 40

onsemi

2206 2.83
- +

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Немедленный

NTMFS5C426NLT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 237A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 250µA 93 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6006PND3FRATL

R6006PND3FRATL

600V 6A TO-252, AUTOMOTIVE POWER

Rohm Semiconductor

2063 2.94
- +

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Немедленный

R6006PND3FRATL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 1mA 15 nC @ 10 V ±30V 460 pF @ 25 V - 87W (Tc) 150°C (TJ) Surface Mount
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