Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
AUIRL1404ZSTRLMOSFET N-CH 40V 160A D2PAK |
3026 | 2.84 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
TK22V65X5,LQPB-F POWER MOSFET TRANSISTOR DFN |
2281 | 2.78 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | DTMOSIV-H | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Ta) | 10V | 170mOhm @ 11A, 10V | 4.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C | Surface Mount |
![]() |
NVMFS5C404NWFAFT3GMOSFET N-CH 40V 53A/378A 5DFN |
2326 | 2.85 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128 nC @ 10 V | ±20V | 8400 pF @ 25 V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
SIHB22N65E-GE3MOSFET N-CH 650V 22A D2PAK |
2787 | 2.85 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±30V | 2415 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
IPL60R140CFD7AUMA1HIGH POWER_NEW |
568 | 2.17 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Bulk | - | Active | - | - | - | 18A (Tc) | - | - | - | - | - | - | - | - | - | - |
![]() |
IPB70N10SL16ATMA1MOSFET N-CH 100V 70A TO263-3 |
2955 | 2.87 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | SIPMOS® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 16mOhm @ 50A, 10V | 2V @ 2mA | 240 nC @ 10 V | ±20V | 4540 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IXFA10N80P-TRLMOSFET N-CH 800V 10A TO263 |
2416 | 2.87 |
ДобавитьНемедленный |
Tape & Reel (TR) | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 10A (Tc) | 10V | 1.1Ohm @ 5A, 10V | 5.5V @ 2.5mA | 40 nC @ 10 V | ±30V | 2050 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
SIHP17N80E-GE3MOSFET N-CH 800V 15A TO220AB |
3212 | 2.87 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2408 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
NVMFS5C604NLWFAFT3GMOSFET N-CH 60V 287A 5DFN |
2816 | 2.88 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 52 nC @ 4.5 V | ±20V | 8900 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
TK15A50D(STA4,Q,M)MOSFET N-CH 500V 15A TO220SIS |
2441 | 2.88 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | Through Hole |
![]() |
R6012ANXMOSFET N-CH 600V 12A TO220FM |
3758 | 2.88 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Ta) | 10V | 420mOhm @ 6A, 10V | 4.5V @ 1mA | 35 nC @ 10 V | ±30V | 1300 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | Through Hole |
![]() |
IPA65R190E6XKSA1MOSFET N-CH 650V 20.2A TO220 |
3468 | 1.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPP65R190C6XKSA1MOSFET N-CH 650V 20.2A TO220-3 |
476 | 1.93 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPI65R190C6XKSA1MOSFET N-CH 650V 20.2A TO262-3 |
2065 | 2.89 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IXTP12N65X2MMOSFET N-CH 650V 12A TO220 |
3919 | 2.89 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 4.5V @ 250µA | 17.7 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
STP17N80K5MOSFET N-CHANNEL 800V 14A TO220 |
3403 | 2.89 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 14A (Tc) | 10V | 340mOhm @ 7A, 10V | 5V @ 250µA | 26 nC @ 10 V | ±30V | 866 pF @ 100 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
AUIRF1405ZS-7PMOSFET N-CH 55V 120A D2PAK |
3255 | 2.89 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230 nC @ 10 V | ±20V | 5360 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
SPA11N60CFDXKSA1MOSFET N-CH 600V 11A TO220-3 |
2069 | 1.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 440mOhm @ 7A, 10V | 5V @ 1.9mA | 64 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPB100N08S2L07ATMA1MOSFET N-CH 75V 100A TO263-3 |
6674 | 2.20 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Bulk | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 80A, 10V | 2V @ 250µA | 246 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
IPA90R500C3XKSA2MOSFET N-CH 900V 11A TO220 |
2578 | 2.90 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68 nC @ 10 V | ±20V | 1700 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |