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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRL1404ZSTRL

AUIRL1404ZSTRL

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies

3026 2.84
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AUIRL1404ZSTRL

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Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK22V65X5,LQ

TK22V65X5,LQ

PB-F POWER MOSFET TRANSISTOR DFN

Toshiba Semiconductor and Storage

2281 2.78
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TK22V65X5,LQ

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Tape & Reel (TR) DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 170mOhm @ 11A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C Surface Mount
NVMFS5C404NWFAFT3G

NVMFS5C404NWFAFT3G

MOSFET N-CH 40V 53A/378A 5DFN

onsemi

2326 2.85
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NVMFS5C404NWFAFT3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 53A (Ta), 378A (Tc) 10V 0.7mOhm @ 50A, 10V 4V @ 250µA 128 nC @ 10 V ±20V 8400 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHB22N65E-GE3

SIHB22N65E-GE3

MOSFET N-CH 650V 22A D2PAK

Vishay Siliconix

2787 2.85
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SIHB22N65E-GE3

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2415 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPL60R140CFD7AUMA1

IPL60R140CFD7AUMA1

HIGH POWER_NEW

Infineon Technologies

568 2.17
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IPL60R140CFD7AUMA1

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Tape & Reel (TR),Bulk - Active - - - 18A (Tc) - - - - - - - - - -
IPB70N10SL16ATMA1

IPB70N10SL16ATMA1

MOSFET N-CH 100V 70A TO263-3

Infineon Technologies

2955 2.87
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IPB70N10SL16ATMA1

Datenblatt

Tape & Reel (TR) SIPMOS® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 16mOhm @ 50A, 10V 2V @ 2mA 240 nC @ 10 V ±20V 4540 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFA10N80P-TRL

IXFA10N80P-TRL

MOSFET N-CH 800V 10A TO263

IXYS

2416 2.87
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Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5.5V @ 2.5mA 40 nC @ 10 V ±30V 2050 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP17N80E-GE3

SIHP17N80E-GE3

MOSFET N-CH 800V 15A TO220AB

Vishay Siliconix

3212 2.87
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SIHP17N80E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS5C604NLWFAFT3G

NVMFS5C604NLWFAFT3G

MOSFET N-CH 60V 287A 5DFN

onsemi

2816 2.88
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NVMFS5C604NLWFAFT3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 250µA 52 nC @ 4.5 V ±20V 8900 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK15A50D(STA4,Q,M)

TK15A50D(STA4,Q,M)

MOSFET N-CH 500V 15A TO220SIS

Toshiba Semiconductor and Storage

2441 2.88
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TK15A50D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Ta) 10V 300mOhm @ 7.5A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 2300 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
R6012ANX

R6012ANX

MOSFET N-CH 600V 12A TO220FM

Rohm Semiconductor

3758 2.88
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R6012ANX

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 420mOhm @ 6A, 10V 4.5V @ 1mA 35 nC @ 10 V ±30V 1300 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
IPA65R190E6XKSA1

IPA65R190E6XKSA1

MOSFET N-CH 650V 20.2A TO220

Infineon Technologies

3468 1.00
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IPA65R190E6XKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R190C6XKSA1

IPP65R190C6XKSA1

MOSFET N-CH 650V 20.2A TO220-3

Infineon Technologies

476 1.93
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IPP65R190C6XKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI65R190C6XKSA1

IPI65R190C6XKSA1

MOSFET N-CH 650V 20.2A TO262-3

Infineon Technologies

2065 2.89
- +

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IPI65R190C6XKSA1

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP12N65X2M

IXTP12N65X2M

MOSFET N-CH 650V 12A TO220

IXYS

3919 2.89
- +

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IXTP12N65X2M

Datenblatt

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 300mOhm @ 6A, 10V 4.5V @ 250µA 17.7 nC @ 10 V ±30V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP17N80K5

STP17N80K5

MOSFET N-CHANNEL 800V 14A TO220

STMicroelectronics

3403 2.89
- +

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STP17N80K5

Datenblatt

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 14A (Tc) 10V 340mOhm @ 7A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 866 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF1405ZS-7P

AUIRF1405ZS-7P

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies

3255 2.89
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AUIRF1405ZS-7P

Datenblatt

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPA11N60CFDXKSA1

SPA11N60CFDXKSA1

MOSFET N-CH 600V 11A TO220-3

Infineon Technologies

2069 1.00
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SPA11N60CFDXKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 440mOhm @ 7A, 10V 5V @ 1.9mA 64 nC @ 10 V ±20V 1200 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB100N08S2L07ATMA1

IPB100N08S2L07ATMA1

MOSFET N-CH 75V 100A TO263-3

Infineon Technologies

6674 2.20
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IPB100N08S2L07ATMA1

Datenblatt

Tape & Reel (TR),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 80A, 10V 2V @ 250µA 246 nC @ 10 V ±20V 5400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA90R500C3XKSA2

IPA90R500C3XKSA2

MOSFET N-CH 900V 11A TO220

Infineon Technologies

2578 2.90
- +

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IPA90R500C3XKSA2

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
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