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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
NTS1260MFST1G

NTS1260MFST1G

DIODE SCHOTTKY 60V 12A 5DFN

onsemi

3633 0.28
- +

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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 90 µA @ 60 V 60 V 12A -55°C ~ 150°C 600 mV @ 12 A
1N1202A

1N1202A

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor

3672 4.81
- +

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Немедленный

1N1202A

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 12A -65°C ~ 200°C 1.1 V @ 12 A
EGF1A-E3/5CA

EGF1A-E3/5CA

DIODE GEN PURP 50V 1A DO214BA

Vishay General Semiconductor - Diodes Division

3460 0.28
- +

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EGF1A-E3/5CA

Datenblatt

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -65°C ~ 175°C 1 V @ 1 A
1N1204A

1N1204A

DIODE GEN PURP 400V 12A DO4

GeneSiC Semiconductor

2285 4.81
- +

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Немедленный

1N1204A

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 12A -65°C ~ 200°C 1.1 V @ 12 A
EGF1C-E3/5CA

EGF1C-E3/5CA

DIODE GEN PURP 150V 1A DO214BA

Vishay General Semiconductor - Diodes Division

3046 0.28
- +

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Немедленный

EGF1C-E3/5CA

Datenblatt

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 50 ns 5 µA @ 150 V 150 V 1A -65°C ~ 175°C 1 V @ 1 A
1N1204AR

1N1204AR

DIODE GEN PURP REV 400V 12A DO4

GeneSiC Semiconductor

2374 4.81
- +

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Немедленный

1N1204AR

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 12A -65°C ~ 200°C 1.1 V @ 12 A
EGF1D-E3/5CA

EGF1D-E3/5CA

DIODE GEN PURP 200V 1A DO214BA

Vishay General Semiconductor - Diodes Division

2732 0.28
- +

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Немедленный

EGF1D-E3/5CA

Datenblatt

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1 V @ 1 A
1N3671A

1N3671A

DIODE GEN PURP 800V 12A DO4

GeneSiC Semiconductor

2537 4.81
- +

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Немедленный

1N3671A

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 800 V 12A -65°C ~ 200°C 1.1 V @ 12 A
EGF1C-E3/67A

EGF1C-E3/67A

DIODE GEN PURP 150V 1A DO214BA

Vishay General Semiconductor - Diodes Division

2489 0.28
- +

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Немедленный

EGF1C-E3/67A

Datenblatt

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 50 ns 5 µA @ 150 V 150 V 1A -65°C ~ 175°C 1 V @ 1 A
S12BR

S12BR

DIODE GEN PURP REV 100V 12A DO4

GeneSiC Semiconductor

2835 4.81
- +

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Немедленный

S12BR

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 100 V 12A -65°C ~ 175°C 1.1 V @ 12 A
SE80PWBHM3/I

SE80PWBHM3/I

DIODE GEN PURP 100V 8A SLIMDPAK

Vishay General Semiconductor - Diodes Division

2709 0.28
- +

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Немедленный

SE80PWBHM3/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS - - Active - - - - - - - -
S12D

S12D

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor

3039 4.81
- +

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Немедленный

S12D

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 12A -65°C ~ 175°C 1.1 V @ 12 A
SE80PWDHM3/I

SE80PWDHM3/I

DIODE GEN PURP 200V 8A SLIMDPAK

Vishay General Semiconductor - Diodes Division

3067 0.28
- +

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Немедленный

SE80PWDHM3/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 58pF @ 4V, 1MHz 2.4 µs 15 µA @ 200 V 200 V 8A -40°C ~ 175°C 1.12 V @ 8 A
S12DR

S12DR

DIODE GEN PURP REV 200V 12A DO4

GeneSiC Semiconductor

2220 4.81
- +

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Немедленный

S12DR

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 12A -65°C ~ 175°C 1.1 V @ 12 A
SE80PWGHM3/I

SE80PWGHM3/I

DIODE GEN PURP 400V 8A SLIMDPAK

Vishay General Semiconductor - Diodes Division

3896 0.28
- +

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Немедленный

SE80PWGHM3/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 58pF @ 4V, 1MHz 2.4 µs 15 µA @ 400 V 400 V 8A -40°C ~ 175°C 1.12 V @ 8 A
S12G

S12G

DIODE GEN PURP 400V 12A DO4

GeneSiC Semiconductor

2822 4.81
- +

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Немедленный

S12G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 12A -65°C ~ 175°C 1.1 V @ 12 A
SE80PWJHM3/I

SE80PWJHM3/I

DIODE GEN PURP 600V 8A SLIMDPAK

Vishay General Semiconductor - Diodes Division

2421 0.28
- +

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Немедленный

SE80PWJHM3/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 58pF @ 4V, 1MHz 2.4 µs 15 µA @ 600 V 600 V 8A -40°C ~ 175°C 1.12 V @ 8 A
S12GR

S12GR

DIODE GEN PURP REV 400V 12A DO4

GeneSiC Semiconductor

3640 4.81
- +

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Немедленный

S12GR

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 12A -65°C ~ 175°C 1.1 V @ 12 A
V10P15-M3/H

V10P15-M3/H

DIODE SCHOTTKY 150V 10A TO277A

Vishay General Semiconductor - Diodes Division

2935 0.28
- +

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Немедленный

V10P15-M3/H

Datenblatt

Tape & Box (TB) eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 150 V 150 V 10A -40°C ~ 150°C 1.08 V @ 10 A
S12J

S12J

DIODE GEN PURP 600V 12A DO4

GeneSiC Semiconductor

3758 4.81
- +

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Немедленный

S12J

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 12A -65°C ~ 175°C 1.1 V @ 12 A
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