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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
BYT51J-TAP

BYT51J-TAP

DIODE AVALANCHE 600V 1.5A SOD57

Vishay General Semiconductor - Diodes Division

2136 0.28
- +

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BYT51J-TAP

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 4 µs 1 µA @ 600 V 600 V 1.5A -55°C ~ 175°C 1.1 V @ 1 A
JAN1N5806

JAN1N5806

DIODE GEN PURP 150V 2.5A AXIAL

Microchip Technology

3463 4.73
- +

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Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 10V, 1MHz 25 ns 1 µA @ 150 V 150 V 2.5A -65°C ~ 175°C 975 mV @ 2.5 A
BYT52G-TAP

BYT52G-TAP

DIODE AVALANCHE 400V 1.4A SOD57

Vishay General Semiconductor - Diodes Division

2905 0.28
- +

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BYT52G-TAP

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 200 ns 5 µA @ 400 V 400 V 1.4A -55°C ~ 175°C 1.3 V @ 1 A
JANTX1N3611

JANTX1N3611

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

2135 4.74
- +

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JANTX1N3611

Datenblatt

Bulk Military, MIL-PRF-19500/228 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 1 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.1 V @ 1 A
BYT53B-TAP

BYT53B-TAP

DIODE AVALANCHE 100V 1.9A SOD57

Vishay General Semiconductor - Diodes Division

3961 0.28
- +

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BYT53B-TAP

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 50 ns 5 µA @ 100 V 100 V 1.9A -55°C ~ 175°C 1.1 V @ 1 A
CDLL1A60

CDLL1A60

DIODE SCHOTTKY 60V 1A DO213AB

Microchip Technology

3401 4.74
- +

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CDLL1A60

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 0.9pF @ 5V, 1MHz - 100 µA @ 60 V 60 V 1A - 690 mV @ 1 A
BYT54G-TAP

BYT54G-TAP

DIODE AVALANCHE 400V 1.25A SOD57

Vishay General Semiconductor - Diodes Division

3120 0.28
- +

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Немедленный

BYT54G-TAP

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 100 ns 5 µA @ 400 V 400 V 1.25A -55°C ~ 175°C 1.5 V @ 1 A
VS-60EPU02-N3

VS-60EPU02-N3

DIODE GEN PURP 200V 60A TO247AC

Vishay General Semiconductor - Diodes Division

3399 4.75
- +

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VS-60EPU02-N3

Datenblatt

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 28 ns 50 µA @ 200 V 200 V 60A -55°C ~ 175°C 1.08 V @ 60 A
BYV14-TAP

BYV14-TAP

DIODE AVALANCHE 600V 1.5A SOD57

Vishay General Semiconductor - Diodes Division

3633 0.28
- +

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Немедленный

BYV14-TAP

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 300 ns 5 µA @ 600 V 600 V 1.5A -55°C ~ 175°C 1.5 V @ 1 A
APT100D60BG

APT100D60BG

FRED D 1000 V 60 A TO-247

Microchip Technology

3970 4.75
- +

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APT100D60BG

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 250 µA @ 600 V 600 V 100A -55°C ~ 150°C 2 V @ 100 A
BYX85TAP

BYX85TAP

DIODE AVALANCHE 800V 2A SOD57

Vishay General Semiconductor - Diodes Division

2952 0.28
- +

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Немедленный

BYX85TAP

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole 20pF @ 4V, 1MHz 4 µs 1 µA @ 800 V 800 V 2A -55°C ~ 175°C 1 V @ 1 A
JAN1N4942

JAN1N4942

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

2848 4.76
- +

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JAN1N4942

Datenblatt

Bulk Military, MIL-PRF-19500/359 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 150 ns 1 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.3 V @ 1 A
BY458TR

BY458TR

DIODE AVALANCHE 1.2KV 2A SOD57

Vishay General Semiconductor - Diodes Division

3385 0.28
- +

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Немедленный

BY458TR

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 2 µs 3 µA @ 1200 V 1200 V 2A 140°C (Max) 1.6 V @ 3 A
JANTX1N5616

JANTX1N5616

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

2381 4.76
- +

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Немедленный

JANTX1N5616

Datenblatt

Bulk Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 400 V 400 V 1A -65°C ~ 200°C 1.3 V @ 3 A
BYT51J-TR

BYT51J-TR

DIODE AVALANCHE 600V 1.5A SOD57

Vishay General Semiconductor - Diodes Division

3749 0.28
- +

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Немедленный

BYT51J-TR

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 4 µs 1 µA @ 600 V 600 V 1.5A -55°C ~ 175°C 1.1 V @ 1 A
JANTX1N5618

JANTX1N5618

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

3604 4.76
- +

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Немедленный

JANTX1N5618

Datenblatt

Bulk Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 600 V 600 V 1A -65°C ~ 200°C 1.3 V @ 3 A
BYT52G-TR

BYT52G-TR

DIODE AVALANCHE 400V 1.4A SOD57

Vishay General Semiconductor - Diodes Division

2771 0.28
- +

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Немедленный

BYT52G-TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 200 ns 5 µA @ 400 V 400 V 1.4A -55°C ~ 175°C 1.3 V @ 1 A
VS-12F80

VS-12F80

DIODE GEN PURP 800V 12A DO203AA

Vishay General Semiconductor - Diodes Division

3045 4.77
- +

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VS-12F80

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 12 mA @ 800 V 800 V 12A -65°C ~ 175°C 1.26 V @ 38 A
BYT53B-TR

BYT53B-TR

DIODE AVALANCHE 100V 1.9A SOD57

Vishay General Semiconductor - Diodes Division

2912 0.28
- +

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Немедленный

BYT53B-TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 50 ns 5 µA @ 100 V 100 V 1.9A -55°C ~ 175°C 1.1 V @ 1 A
1N5619E3

1N5619E3

HERMETICALLY SEALED GLASS RECTIF

Microchip Technology

3423 4.77
- +

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Bulk Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 12V, 1MHz - 500 µA @ 400 V 600 V 1A -65°C ~ 200°C 1.6 V @ 3 A
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