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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
BYT54G-TR

BYT54G-TR

DIODE AVALANCHE 400V 1.25A SOD57

Vishay General Semiconductor - Diodes Division

2379 0.28
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BYT54G-TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 100 ns 5 µA @ 400 V 400 V 1.25A -55°C ~ 175°C 1.5 V @ 1 A
1N5619/TR

1N5619/TR

RECTIFIER UFR,FRR

Microchip Technology

3625 4.77
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1N5619/TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 12V, 1MHz 250 ns 500 nA @ 600 V 600 V 1A -65°C ~ 175°C 1.6 V @ 3 A
BYV14-TR

BYV14-TR

DIODE AVALANCHE 600V 1.5A SOD57

Vishay General Semiconductor - Diodes Division

2988 0.28
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BYV14-TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 300 ns 5 µA @ 600 V 600 V 1.5A -55°C ~ 175°C 1.5 V @ 1 A
VS-80EBU02HF4

VS-80EBU02HF4

DIODE GEN PURP 200V 80A POWERTAB

Vishay General Semiconductor - Diodes Division

2064 4.78
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VS-80EBU02HF4

Datenblatt

Tube Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis Mount - 40 ns 50 µA @ 200 V 200 V 80A -55°C ~ 175°C 1.1 V @ 80 A
BYW34-TR

BYW34-TR

DIODE AVALANCHE 400V 2A SOD57

Vishay General Semiconductor - Diodes Division

3358 0.28
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BYW34-TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 200 ns 5 µA @ 400 V 400 V 2A -55°C ~ 175°C 1.1 V @ 1 A
VS-12FL10S05

VS-12FL10S05

DIODE GEN PURP 100V 12A DO203AA

Vishay General Semiconductor - Diodes Division

2596 4.80
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VS-12FL10S05

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 50 µA @ 100 V 100 V 12A -65°C ~ 150°C 1.4 V @ 12 A
BYX85TR

BYX85TR

DIODE AVALANCHE 800V 2A SOD57

Vishay General Semiconductor - Diodes Division

2907 0.28
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BYX85TR

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole 20pF @ 4V, 1MHz 4 µs 1 µA @ 800 V 800 V 2A -55°C ~ 175°C 1 V @ 1 A
1N1199AR

1N1199AR

DIODE GEN PURP REV 50V 12A DO4

GeneSiC Semiconductor

2748 4.81
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1N1199AR

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 50 V 12A -65°C ~ 200°C 1.1 V @ 12 A
FR6J-TP

FR6J-TP

DIODE GEN PURP 600V 6A DO214AB

Micro Commercial Co

3000 0.59
- +

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FR6J-TP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 250 ns 10 µA @ 600 V 600 V 6A -55°C ~ 150°C 1.3 V @ 6 A
1N1206A

1N1206A

DIODE GEN PURP 600V 12A DO4

GeneSiC Semiconductor

3019 4.81
- +

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1N1206A

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 12A -65°C ~ 200°C 1.1 V @ 12 A
SS115LHR3G

SS115LHR3G

DIODE SCHOTTKY 150V 1A SUB SMA

Taiwan Semiconductor Corporation

2850 0.28
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SS115LHR3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 150 V 150 V 1A -55°C ~ 150°C 900 mV @ 1 A
1N1206AR

1N1206AR

DIODE GEN PURP REV 600V 12A DO4

GeneSiC Semiconductor

3195 4.81
- +

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1N1206AR

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 12A -65°C ~ 200°C 1.1 V @ 12 A
SS19LHR3G

SS19LHR3G

DIODE SCHOTTKY 90V 1A SUB SMA

Taiwan Semiconductor Corporation

3422 0.28
- +

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SS19LHR3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 90 V 90 V 1A -55°C ~ 150°C 800 mV @ 1 A
1N3671AR

1N3671AR

DIODE GEN PURP REV 800V 12A DO4

GeneSiC Semiconductor

3525 4.81
- +

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1N3671AR

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 800 V 12A -65°C ~ 200°C 1.1 V @ 12 A
STPS140UY

STPS140UY

DIODE SCHOTTKY 40V 1A SMB

STMicroelectronics

3362 0.28
- +

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STPS140UY

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Q Automotive RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 12 µA @ 40 V 40 V 1A -40°C ~ 150°C 650 mV @ 2 A
1N3673A

1N3673A

DIODE GEN PURP 1KV 12A DO4

GeneSiC Semiconductor

2232 4.81
- +

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1N3673A

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 1000 V 12A -65°C ~ 200°C 1.1 V @ 12 A
BA159-E3/73

BA159-E3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

3075 0.00
- +

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BA159-E3/73

Datenblatt

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 12pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V 1000 V 1A -65°C ~ 125°C 1.3 V @ 1 A
1N1199A

1N1199A

DIODE GEN PURP 50V 12A DO4

GeneSiC Semiconductor

2680 4.81
- +

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Немедленный

1N1199A

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 50 V 12A -65°C ~ 200°C 1.1 V @ 12 A
1N4937-E3/73

1N4937-E3/73

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2174 0.00
- +

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1N4937-E3/73

Datenblatt

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 12pF @ 4V, 1MHz 200 ns 5 µA @ 600 V 600 V 1A -50°C ~ 150°C 1.2 V @ 1 A
1N1200AR

1N1200AR

DIODE GEN PURP REV 100V 12A DO4

GeneSiC Semiconductor

2831 4.81
- +

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Немедленный

1N1200AR

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 100 V 12A -65°C ~ 200°C 1.1 V @ 12 A
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