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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
APT40GP60B2DQ2G

APT40GP60B2DQ2G

IGBT 600V 100A 543W TMAX

Microchip Technology

2732 13.90
- +

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Немедленный

APT40GP60B2DQ2G

Datenblatt

Tube POWER MOS 7® Active PT 600 V 100 A 160 A 2.7V @ 15V, 40A 543 W 385µJ (on), 350µJ (off) Standard 135 nC 20ns/64ns 400V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXYP30N120C4

IXYP30N120C4

IGBT DISCRETE TO-220

IXYS

3931 14.09
- +

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Немедленный

Tube - Active - - - - - - - - - - - - - -
IXYP20N120B4

IXYP20N120B4

IGBT DISCRETE TO-220

IXYS

3462 14.21
- +

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Немедленный

Tube XPT™, GenX4™ Active - 1200 V 76 A 130 A 2.1V @ 15V, 20A 375 W 3.9mJ (on), 1.6mJ (off) Standard 44 nC 15ns/200ns 960V, 20A, 10Ohm, 15V 47 ns -55°C ~ 175°C (TJ) Through Hole
IXYP20N120A4

IXYP20N120A4

IGBT DISCRETE TO-220

IXYS

3518 14.21
- +

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Немедленный

Tube XPT™, GenX4™ Active PT 1200 V 80 A 135 A 1.9V @ 15V, 20A 375 W 3.6mJ (on), 2.75mJ (off) Standard 46 nC 12ns/275ns 960V, 20A, 10Ohm, 15V 54 ns -55°C ~ 175°C (TJ) Through Hole
IXYP24N100A4

IXYP24N100A4

IGBT DISCRETE TO-220

IXYS

3201 14.21
- +

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Немедленный

Tube XPT™, GenX4™ Active PT 1000 V 85 A 145 A 1.9V @ 15V, 24A 375 W 3.5mJ (on), 2.3mJ (off) Standard 44 nC 13ns/216ns 800V, 24A, 10Ohm, 15V 47 ns -55°C ~ 175°C (TJ) Through Hole
IXGX50N120C3H1

IXGX50N120C3H1

IGBT 1200V 95A 460W PLUS247

IXYS

3453 14.32
- +

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Немедленный

IXGX50N120C3H1

Datenblatt

Tube GenX3™ Active PT 1200 V 95 A 240 A 4.2V @ 15V, 40A 460 W 2mJ (on), 630µJ (off) Standard 196 nC 31ns/123ns 600V, 40A, 2Ohm, 15V 75 ns -55°C ~ 150°C (TJ) Through Hole
APT102GA60L

APT102GA60L

IGBT 600V 183A 780W TO264

Microchip Technology

3660 14.59
- +

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Немедленный

APT102GA60L

Datenblatt

Tube - Active PT 600 V 183 A 307 A 2.5V @ 15V, 62A 780 W 1.354mJ (on), 1.614mJ (off) Standard 294 nC 28ns/212ns 400V, 62A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT80GA90LD40

APT80GA90LD40

IGBT 900V 145A 625W TO-264

Microchip Technology

3941 14.60
- +

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Немедленный

APT80GA90LD40

Datenblatt

Tube POWER MOS 8™ Active PT 900 V 145 A 239 A 3.1V @ 15V, 47A 625 W 1652µJ (on), 1389µJ (off) Standard 200 nC 18ns/149ns 600V, 47A, 4.7Ohm, 15V 25 ns - Through Hole
IXYH40N120B4

IXYH40N120B4

IGBT DISCRETE TO-247

IXYS

2724 14.87
- +

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Немедленный

Tube XPT™, GenX4™ Active PT 1200 V 136 A 250 A 2.1V @ 15V, 32A 680 W 5.9mJ (on), 2.9mJ (off) Standard 94 nC 19ns/220ns 960V, 32A, 5Ohm, 15V 53 ns -55°C ~ 175°C (TJ) Through Hole
IXYH40N120C4

IXYH40N120C4

IGBT DISCRETE TO-247

IXYS

3799 14.87
- +

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Немедленный

Tube XPT™, GenX4™ Active - 1200 V 120 A 230 A 2.5V @ 15V, 32A 680 W 5.55mJ (on), 1.55mJ (off) Standard 92 nC 21ns/140ns 960V, 32A, 5Ohm, 15V 55 ns -55°C ~ 175°C (TJ) Through Hole
APT85GR120L

APT85GR120L

IGBT 1200V 170A 962W TO264

Microchip Technology

2821 15.23
- +

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Немедленный

APT85GR120L

Datenblatt

Tube - Active NPT 1200 V 170 A 340 A 3.2V @ 15V, 85A 962 W 6mJ (on), 3.8mJ (off) Standard 660 nC 43ns/300ns 600V, 85A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GP60B2DQ2G

APT50GP60B2DQ2G

IGBT 600V 150A 625W TMAX

Microchip Technology

2711 15.27
- +

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Немедленный

APT50GP60B2DQ2G

Datenblatt

Tube POWER MOS 7® Active PT 600 V 150 A 190 A 2.7V @ 15V, 50A 625 W 465µJ (on), 635µJ (off) Standard 165 nC 19ns/85ns 400V, 50A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXXH140N65B4

IXXH140N65B4

DISC IGBT XPT-GENX4 TO-247AD

IXYS

3089 15.48
- +

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Немедленный

Tube XPT™, GenX4™ Active PT 650 V 340 A 840 A 1.9V @ 15V, 120A 1200 W 5.75mJ (on), 2.67mJ (off) Standard 250 nC 54ns/270ns 400V, 100A, 4.7Ohm, 15V 105 ns -55°C ~ 175°C (TJ) Through Hole
APT40GP90BG

APT40GP90BG

IGBT 900V 100A 543W TO247

Microchip Technology

2062 15.88
- +

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Немедленный

APT40GP90BG

Datenblatt

Tube POWER MOS 7® Active PT 900 V 100 A 160 A 3.9V @ 15V, 40A 543 W 825µJ (off) Standard 145 nC 16ns/75ns 600V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXGR55N120A3H1

IXGR55N120A3H1

IGBT 1200V 70A 200W ISOPLUS247

IXYS

3314 15.96
- +

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Немедленный

IXGR55N120A3H1

Datenblatt

Tube GenX3™ Active PT 1200 V 70 A 330 A 2.35V @ 15V, 55A 200 W 5.1mJ (on), 13.3mJ (off) Standard 185 nC 23ns/365ns 960V, 55A, 3Ohm, 15V 200 ns -55°C ~ 150°C (TJ) Through Hole
APT75GN120B2G

APT75GN120B2G

IGBT 1200V 200A 833W TMAX

Microchip Technology

3300 16.36
- +

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Немедленный

APT75GN120B2G

Datenblatt

Tube - Active Trench Field Stop 1200 V 200 A 225 A 2.1V @ 15V, 75A 833 W 8045µJ (on), 7640µJ (off) Standard 425 nC 60ns/620ns 800V, 75A, 1Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXGK50N120C3H1

IXGK50N120C3H1

IGBT 1200V 95A 460W TO264

IXYS

2561 16.37
- +

Добавить

Немедленный

IXGK50N120C3H1

Datenblatt

Tube GenX3™ Active PT 1200 V 95 A 240 A 4.2V @ 15V, 40A 460 W 2mJ (on), 630µJ (off) Standard 196 nC 31ns/123ns 600V, 40A, 2Ohm, 15V 75 ns -55°C ~ 150°C (TJ) Through Hole
IXGX55N120A3H1

IXGX55N120A3H1

IGBT 1200V 125A 460W PLUS247

IXYS

2904 16.40
- +

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Немедленный

Tube GenX3™ Active PT 1200 V 125 A 400 A 2.3V @ 15V, 55A 460 W 5.1mJ (on), 13.3mJ (off) Standard 185 nC 23ns/365ns 960V, 55A, 3Ohm, 15V 200 ns - Through Hole
IXYH100N65A3

IXYH100N65A3

IGBT

IXYS

2835 16.91
- +

Добавить

Немедленный

IXYH100N65A3

Datenblatt

Tube XPT™, GenX3™ Active - 650 V 240 A 480 A 1.8V @ 15V, 70A 470 W 3.15mJ (on), 2.2mJ (off) Standard 178 nC 24ns/174ns 400V, 50A, 2Ohm, 15V 64 ns -55°C ~ 175°C (TJ) Through Hole
IXGH24N170A

IXGH24N170A

IGBT 1700V 24A 250W TO247AD

IXYS

3464 17.17
- +

Добавить

Немедленный

IXGH24N170A

Datenblatt

Tube - Active NPT 1700 V 24 A 75 A 6V @ 15V, 16A 250 W 2.97mJ (on), 790µJ (off) Standard 140 nC 21ns/336ns 850V, 24A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
Total 4915 Records«Prev1... 114115116117118119120121...246Next»
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