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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType
FZ400R12KE4HOSA1

FZ400R12KE4HOSA1

IGBT MOD 1200V 400A 2400W

Infineon Technologies

3374 132.12
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Немедленный

FZ400R12KE4HOSA1

Datenblatt

Tray - Active Trench Field Stop Single 1200 V 400 A 2400 W 2.1V @ 15V, 400A 5 mA 28 nF @ 25 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
FF300R12KT4HOSA1

FF300R12KT4HOSA1

IGBT MOD 1200V 450A 1600W

Infineon Technologies

2654 168.07
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Немедленный

FF300R12KT4HOSA1

Datenblatt

Bulk,Tray C Active Trench Field Stop Half Bridge 1200 V 450 A 1600 W 2.15V @ 15V, 300A 5 mA 19 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
FZ600R17KE4HOSA1

FZ600R17KE4HOSA1

IGBT MOD 1700V 1200A 3350W

Infineon Technologies

3745 222.39
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Немедленный

FZ600R17KE4HOSA1

Datenblatt

Tray C Active Trench Field Stop Single 1700 V 1200 A 3350 W 2.3V @ 15V, 600A 1 mA 49 nF @ 25 V Standard No -40°C ~ 150°C Chassis Mount
FZ600R17KE3HOSA1

FZ600R17KE3HOSA1

IGBT MOD 1700V 840A 3150W

Infineon Technologies

2762 246.52
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Немедленный

FZ600R17KE3HOSA1

Datenblatt

Tray C Active Trench Field Stop Single 1700 V 840 A 3150 W 2.45V @ 15V, 600A 3 mA 54 nF @ 25 V Standard No -40°C ~ 125°C (TJ) Chassis Mount
FF600R12KE4BOSA1

FF600R12KE4BOSA1

IGBT MODULE 1200V 600A

Infineon Technologies

2574 262.71
- +

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Немедленный

FF600R12KE4BOSA1

Datenblatt

Tray C Active Trench Field Stop Half Bridge 1200 V 600 A - 2.2V @ 15V, 600A 5 mA 38 nF @ 25 V Standard No -40°C ~ 150°C Chassis Mount
APTGT600U170D4G

APTGT600U170D4G

IGBT MODULE 1700V 1100A 2900W D4

Microchip Technology

2587 404.87
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APTGT600U170D4G

Datenblatt

Bulk - Active Trench Field Stop Single 1700 V 1100 A 2900 W 2.4V @ 15V, 600A 1 mA 51 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
FS300R12KE3BOSA1

FS300R12KE3BOSA1

IGBT MOD 1200V 500A 1450W

Infineon Technologies

3211 670.28
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Немедленный

FS300R12KE3BOSA1

Datenblatt

Tray - Not For New Designs Trench Field Stop Three Phase Inverter 1200 V 500 A 1450 W 2.15V @ 15V, 300A 5 mA 21 nF @ 25 V Standard Yes -40°C ~ 125°C (TJ) Chassis Mount
FZ600R12KE3HOSA1

FZ600R12KE3HOSA1

IGBT MOD 1200V 900A 2800W

Infineon Technologies

2294 186.34
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Немедленный

FZ600R12KE3HOSA1

Datenblatt

Bulk,Tray - Active Trench Field Stop Single 1200 V 900 A 2800 W 2.15V @ 15V, 600A 5 mA 42 nF @ 25 V Standard Yes -40°C ~ 125°C (TJ) Chassis Mount
IXA27IF1200HJ

IXA27IF1200HJ

IGBT MOD 1200V 43A ISOPLUS247

IXYS

3837 11.75
- +

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Немедленный

IXA27IF1200HJ

Datenblatt

Tube - Active PT Single 1200 V 43 A 150 W 2.1V @ 15V, 25A 100 µA - Standard No -40°C ~ 150°C (TJ) Through Hole
IXDN55N120D1

IXDN55N120D1

IGBT MOD 1200V 100A 450W SOT227B

IXYS

2303 31.96
- +

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Немедленный

IXDN55N120D1

Datenblatt

Tube - Active NPT Single 1200 V 100 A 450 W 2.8V @ 15V, 55A 3.8 mA 3.3 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
IXGN72N60C3H1

IXGN72N60C3H1

IGBT MOD 600V 78A 360W SOT227B

IXYS

2006 33.90
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Немедленный

IXGN72N60C3H1

Datenblatt

Tube GenX3™ Active PT Single 600 V 78 A 360 W 2.5V @ 15V, 50A 250 µA 4.78 nF @ 25 V Standard No -55°C ~ 150°C (TJ) Chassis Mount
STGE200NB60S

STGE200NB60S

IGBT MOD 600V 200A 600W ISOTOP

STMicroelectronics

3118 34.67
- +

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Немедленный

STGE200NB60S

Datenblatt

Tube PowerMESH™ Active - Single 600 V 200 A 600 W 1.6V @ 15V, 100A 500 µA 1.56 nF @ 25 V Standard No -55°C ~ 150°C (TJ) Chassis Mount
FS25R12W1T4BOMA1

FS25R12W1T4BOMA1

IGBT MOD 1200V 45A 205W

Infineon Technologies

3789 43.04
- +

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Немедленный

FS25R12W1T4BOMA1

Datenblatt

Bulk,Tray - Active Trench Field Stop Three Phase Inverter 1200 V 45 A 205 W 2.25V @ 15V, 25A 1 mA 1.45 nF @ 25 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
APT75GP120J

APT75GP120J

IGBT MOD 1200V 128A 543W ISOTOP

Microchip Technology

3574 46.50
- +

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Немедленный

APT75GP120J

Datenblatt

Tube POWER MOS 7® Active PT Single 1200 V 128 A 543 W 3.9V @ 15V, 75A 1 mA 7.04 nF @ 25 V Standard No -55°C ~ 150°C (TJ) Chassis Mount
APT150GN120J

APT150GN120J

IGBT MOD 1200V 215A 625W ISOTOP

Microchip Technology

2517 47.46
- +

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Немедленный

APT150GN120J

Datenblatt

Tube - Active Trench Field Stop Single 1200 V 215 A 625 W 2.1V @ 15V, 150A 100 µA 9.5 nF @ 25 V Standard No -55°C ~ 150°C (TJ) Chassis Mount
APT200GN60JDQ4

APT200GN60JDQ4

IGBT MOD 600V 283A 682W ISOTOP

Microchip Technology

3863 47.55
- +

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Немедленный

APT200GN60JDQ4

Datenblatt

Tube - Active Trench Field Stop Single 600 V 283 A 682 W 1.85V @ 15V, 200A 50 µA 14.1 nF @ 25 V Standard No -55°C ~ 175°C (TJ) Chassis Mount
IXYN82N120C3H1

IXYN82N120C3H1

IGBT MOD 1200V 105A 500W SOT227B

IXYS

252 47.98
- +

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Немедленный

IXYN82N120C3H1

Datenblatt

Tube XPT™, GenX3™ Active - Single 1200 V 105 A 500 W 3.2V @ 15V, 82A 50 µA 4.06 nF @ 25 V Standard No -55°C ~ 150°C (TJ) Chassis Mount
APT75GP120JDQ3

APT75GP120JDQ3

IGBT MOD 1200V 128A 543W ISOTOP

Microchip Technology

3762 49.99
- +

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Немедленный

APT75GP120JDQ3

Datenblatt

Tube POWER MOS 7® Active PT Single 1200 V 128 A 543 W 3.9V @ 15V, 75A 1.25 mA 7.04 nF @ 25 V Standard No -55°C ~ 150°C (TJ) Chassis Mount
IXYN100N120C3H1

IXYN100N120C3H1

IGBT MOD 1200V 134A 690W SOT227B

IXYS

3224 52.86
- +

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Немедленный

IXYN100N120C3H1

Datenblatt

Tube XPT™, GenX3™ Active - Single 1200 V 134 A 690 W 3.5V @ 15V, 100A 50 µA 6 nF @ 25 V Standard No -55°C ~ 150°C (TJ) Chassis Mount
FP25R12W2T4B11BOMA1

FP25R12W2T4B11BOMA1

IGBT MOD 1200V 39A 175W

Infineon Technologies

2832 1.00
- +

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Немедленный

FP25R12W2T4B11BOMA1

Datenblatt

Bulk,Tray - Active Trench Field Stop Three Phase Inverter 1200 V 39 A 175 W 2.25V @ 15V, 25A 1 mA 1.45 nF @ 25 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
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