Transistors - IGBTs - Modules - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	А	Таблицы данных	Packaging	Series	ProductStatus	IGBTType	Configuration	Voltage-CollectorEmitterBreakdown(Max)	Current-Collector(Ic)(Max)	Power-Max	Vce(on)(Max)@VgeIc	Current-CollectorCutoff(Max)	InputCapacitance(Cies)@Vce	Input	NTCThermistor	OperatingTemperature	MountingType
APTGT30DDA60T3G IGBT MODULE 600V 50A 90W SP3 Microsemi Corporation	3005	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	Trench Field Stop	Dual Boost Chopper	600 V	50 A	90 W	1.9V @ 15V, 30A	250 µA	1.6 nF @ 25 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount
APTGT30DSK60T3G IGBT MODULE 600V 50A 90W SP3 Microsemi Corporation	2934	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	Trench Field Stop	Dual Buck Chopper	600 V	50 A	90 W	1.9V @ 15V, 30A	250 µA	1.6 nF @ 25 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount
APTGT30H60T3G IGBT MODULE 600V 50A 90W SP3 Microsemi Corporation	3656	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	Trench Field Stop	Full Bridge Inverter	600 V	50 A	90 W	1.9V @ 15V, 30A	250 µA	1.6 nF @ 25 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount
APTGT30SK170D1G IGBT MODULE 1700V 45A 210W D1 Microsemi Corporation	3479	- + Добавить Немедленный	Datenblatt	Bulk	-	Discontinued at Mosen	Trench Field Stop	Single	1700 V	45 A	210 W	2.4V @ 15V, 30A	3 mA	2.5 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
APTGT30SK170T1G IGBT MODULE 1700V 45A 210W SP1 Microsemi Corporation	2425	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	Trench Field Stop	Single	1700 V	45 A	210 W	2.4V @ 15V, 30A	250 µA	2.5 nF @ 25 V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount
APTGT35A120D1G IGBT MODULE 1200V 55A 205W D1 Microsemi Corporation	3691	- + Добавить Немедленный		Bulk	-	Discontinued at Mosen	Trench Field Stop	Half Bridge	1200 V	55 A	205 W	2.1V @ 15V, 35A	5 mA	2.5 nF @ 25 V	Standard	No	-	Chassis Mount
APTGT35DA120D1G IGBT MODULE 1200V 55A 205W D1 Microsemi Corporation	3177	- + Добавить Немедленный	Datenblatt	Bulk	-	Discontinued at Mosen	Trench Field Stop	Single	1200 V	55 A	205 W	2.1V @ 15V, 35A	5 mA	2.5 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
APTGT35H120T1G IGBT MODULE 1200V 55A 208W SP1 Microsemi Corporation	2811	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	Trench Field Stop	Full Bridge Inverter	1200 V	55 A	208 W	2.1V @ 15V, 35A	250 µA	2.5 nF @ 25 V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount
APTGT35SK120D1G IGBT MODULE 1200V 55A 205W D1 Microsemi Corporation	2526	- + Добавить Немедленный	Datenblatt	Bulk	-	Discontinued at Mosen	Trench Field Stop	Single	1200 V	55 A	205 W	2.1V @ 15V, 35A	5 mA	2.5 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
APTGT400DA120D3G IGBT MODULE 1200V 580A 2100W D3 Microsemi Corporation	2198	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	Trench Field Stop	Single	1200 V	580 A	2100 W	2.1V @ 15V, 400A	750 µA	29 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
APTGT400SK120D3G IGBT MODULE 1200V 580A 2100W D3 Microsemi Corporation	3411	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	Trench Field Stop	Single	1200 V	580 A	2100 W	2.1V @ 15V, 400A	750 µA	29 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
APTGT400SK60D3G IGBT MODULE 600V 500A 1250W D3 Microsemi Corporation	2462	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	Trench Field Stop	Single	600 V	500 A	1250 W	1.9V @ 15V, 400A	500 µA	24 nF @ 25 V	Standard	No	-40°C ~ 175°C (TJ)	Chassis Mount
APTGT450DU60G IGBT MODULE 600V 550A 1750W SP6 Microsemi Corporation	2078	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	Trench Field Stop	Dual, Common Source	600 V	550 A	1750 W	1.8V @ 15V, 450A	500 µA	37 nF @ 25 V	Standard	No	-40°C ~ 175°C (TJ)	Chassis Mount
APTGT50A120D1G IGBT MODULE 1200V 75A 270W D1 Microsemi Corporation	3002	- + Добавить Немедленный		Bulk	-	Discontinued at Mosen	Trench Field Stop	Half Bridge	1200 V	75 A	270 W	2.1V @ 15V, 50A	5 mA	3.6 nF @ 25 V	Standard	No	-	Chassis Mount
APTGT50A120TG IGBT MODULE 1200V 75A 277W SP4 Microsemi Corporation	2776	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	Trench Field Stop	Half Bridge	1200 V	75 A	277 W	2.1V @ 15V, 50A	250 µA	3.6 nF @ 25 V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount
APTGT50A170D1G IGBT MODULE 1700V 70A 310W D1 Microsemi Corporation	2874	- + Добавить Немедленный		Bulk	-	Discontinued at Mosen	Trench Field Stop	Half Bridge	1700 V	70 A	310 W	2.4V @ 15V, 50A	6 mA	4.4 nF @ 25 V	Standard	No	-	Chassis Mount
APTGT50A60T1G IGBT MODULE 600V 80A 176W SP1 Microsemi Corporation	2041	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	Trench Field Stop	Half Bridge	600 V	80 A	176 W	1.9V @ 15V, 50A	250 µA	3.15 nF @ 25 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount
APTGT50DA120D1G IGBT MODULE 1200V 75A 270W D1 Microsemi Corporation	3585	- + Добавить Немедленный		Bulk	-	Discontinued at Mosen	Trench Field Stop	Single	1200 V	75 A	270 W	2.1V @ 15V, 50A	5 mA	3.6 nF @ 25 V	Standard	No	-	Chassis Mount
APTGT50DA170D1G IGBT MODULE 1700V 70A 310W D1 Microsemi Corporation	3801	- + Добавить Немедленный	Datenblatt	Bulk	-	Discontinued at Mosen	Trench Field Stop	Single	1700 V	70 A	310 W	2.4V @ 15V, 50A	6 mA	4.4 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
APTGT50DA170T1G IGBT MODULE 1700V 75A 312W SP1 Microsemi Corporation	2252	- + Добавить Немедленный	Datenblatt	Bulk	-	Obsolete	Trench Field Stop	Single	1700 V	75 A	312 W	2.4V @ 15V, 50A	250 µA	4.4 nF @ 25 V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount