Transistors - IGBTs - Modules - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	ProductStatus	IGBTType	Configuration	Voltage-CollectorEmitterBreakdown(Max)	Current-Collector(Ic)(Max)	Power-Max	Vce(on)(Max)@VgeIc	Current-CollectorCutoff(Max)	InputCapacitance(Cies)@Vce	Input	NTCThermistor	OperatingTemperature	MountingType
FS75R12W2T4B11BOMA1 IGBT MOD 1200V 107A 375W Infineon Technologies	3714	73.28	- + Добавить Немедленный	Datenblatt	Tray	EasyPACK™	Active	Trench Field Stop	Full Bridge	1200 V	107 A	375 W	2.15V @ 15V, 75A	1 mA	4.3 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount
FP25R12W2T4BOMA1 IGBT MOD 1200V 39A 175W Infineon Technologies	3366	57.97	- + Добавить Немедленный	Datenblatt	Tray	-	Active	-	Three Phase Inverter	1200 V	39 A	175 W	2.25V @ 15V, 25A	1 mA	1.45 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount
FF75R12RT4HOSA1 IGBT MOD 1200V 75A 395W Infineon Technologies	3136	64.10	- + Добавить Немедленный	Datenblatt	Tray	PrimePACK™2	Active	Trench Field Stop	2 Independent	1200 V	75 A	395 W	2.15V @ 15V, 75A	1 mA	4.3 nF @ 25 V	Standard	No	-40°C ~ 150°C	Chassis Mount
FS150R06KE3BOSA1 IGBT MOD 600V 150A 430W Infineon Technologies	2495	193.90	- + Добавить Немедленный	Datenblatt	Tray	-	Active	Trench Field Stop	Three Phase Inverter	600 V	150 A	430 W	1.9V @ 15V, 150A	1 mA	9.3 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
BSM50GP120BOSA1 IGBT MODULE 1200V 50A Infineon Technologies	3241	257.22	- + Добавить Немедленный	Datenblatt	Tray	-	Not For New Designs	-	3 Phase Inverter	1200 V	80 A	-	2.55V @ 15V, 50A	500 µA	3.3 pF @ 25 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 125°C	Chassis Mount
FP75R06KE3BOSA1 IGBT MODULE 600V 95A 250W Infineon Technologies	2039	145.93	- + Добавить Немедленный	Datenblatt	Tray	EconoPIM™ 3	Active	Trench Field Stop	Three Phase Inverter	600 V	95 A	250 W	1.9V @ 15V, 75A	1 mA	4.6 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount
FS100R06KE3BOSA1 IGBT MOD 600V 100A 335W Infineon Technologies	2504	155.52	- + Добавить Немедленный	Datenblatt	Tray	EconoPACK™ 3	Not For New Designs	Trench Field Stop	Three Phase Inverter	600 V	100 A	335 W	1.9V @ 15V, 100A	1 mA	6.2 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount
FP15R12W1T4B3BOMA1 IGBT MOD 1200V 28A 130W Infineon Technologies	2797	41.29	- + Добавить Немедленный	Datenblatt	Tray	EasyPIM™	Active	Trench Field Stop	Three Phase Inverter	1200 V	28 A	130 W	2.25V @ 15V, 15A	1 mA	890 pF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount
FF100R12KS4HOSA1 IGBT MOD 1200V 150A 780W Infineon Technologies	3209	116.49	- + Добавить Немедленный	Datenblatt	Tray	C	Active	-	2 Independent	1200 V	150 A	780 W	3.7V @ 15V, 100A	5 mA	650 nF @ 25 V	Standard	No	-40°C ~ 125°C	Chassis Mount
FP75R12KT4BOSA1 IGBT MOD 1200V 75A 385W Infineon Technologies	2705	189.32	- + Добавить Немедленный	Datenblatt	Tray	EconoPIM™ 3	Active	Trench Field Stop	Three Phase Inverter	1200 V	75 A	385 W	2.25V @ 15V, 75A	1 mA	4.3 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount
CPV364M4U IGBT MODULE 600V 20A 63W IMS-2 Vishay General Semiconductor - Diodes Division	3747	0.00	- + Добавить Немедленный		Bulk	-	Active	-	Three Phase Inverter	600 V	20 A	63 W	1.84V @ 15V, 20A	250 µA	2.1 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole
GA400TD25S IGBT MOD 250V 400A INT-A-PAK Vishay General Semiconductor - Diodes Division	2619	0.00	- + Добавить Немедленный	Datenblatt	Tube	-	Obsolete	-	Half Bridge	250 V	400 A	1350 W	1.6V @ 15V, 400A	500 µA	36 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
GA200SA60U IGBT MOD 600V 200A 500W SOT227B Vishay General Semiconductor - Diodes Division	3407	0.00	- + Добавить Немедленный	Datenblatt	-	-	Obsolete	-	Single	600 V	200 A	500 W	1.9V @ 15V, 100A	1 mA	16.5 nF @ 30 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
GA200SA60S IGBT MOD 600V 200A 630W SOT227B Vishay General Semiconductor - Diodes Division	3478	0.00	- + Добавить Немедленный	Datenblatt	-	-	Obsolete	-	Single	600 V	200 A	630 W	1.3V @ 15V, 100A	1 mA	16.25 nF @ 30 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
VS-GT55NA120UX SOT-227 - HIGH SIDE CHOPPER IGBT Vishay General Semiconductor - Diodes Division	2374	37.49	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Trench Field Stop	Single Chopper	1200 V	68 A	291 W	2.8V @ 15V, 50A	50 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-GT55LA120UX SOT-227 - LOW SIDE CHOPPER IGBT Vishay General Semiconductor - Diodes Division	2528	37.49	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Trench Field Stop	Single Chopper	1200 V	68 A	291 W	2.8V @ 15V, 50A	50 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-GT90DA120U SOT-227 - SINGLE SWITCH IGBT + A Vishay General Semiconductor - Diodes Division	3517	39.14	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Trench Field Stop	Single	1200 V	169 A	781 W	2.6V @ 15V, 75A	100 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-ENV020F65U POWER MODULE Vishay General Semiconductor - Diodes Division	3982	39.85	- + Добавить Немедленный	Datenblatt	Box	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
VS-ENV020M120M POWER MODULE Vishay General Semiconductor - Diodes Division	3768	43.64	- + Добавить Немедленный	Datenblatt	Box	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
VS-ENY050C60 POWER MODULE Vishay General Semiconductor - Diodes Division	2893	54.22	- + Добавить Немедленный	Datenblatt	Box	*	Active	-	-	-	-	-	-	-	-	-	-	-	-