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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTH68P20T

IXTH68P20T

MOSFET P-CH 200V 68A TO247

IXYS

3792 18.42
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IXTH68P20T

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Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 68A (Tc) 10V 55mOhm @ 34A, 10V 4V @ 250µA 380 nC @ 10 V ±15V 33400 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R029CFD7XKSA1

IPW65R029CFD7XKSA1

MOSFET N-CH 650V 69A TO247-3

Infineon Technologies

3289 18.56
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IPW65R029CFD7XKSA1

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Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 69A (Tc) - 29mOhm @ 35.8A, 10V 4.5V @ 1.79mA 145 nC @ 10 V ±20V 7149 pF @ 400 V - 305W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR200N10P

IXFR200N10P

MOSFET N-CH 100V 133A ISOPLUS247

IXYS

2055 18.58
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IXFR200N10P

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Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 133A (Tc) 10V 9mOhm @ 100A, 10V 5V @ 8mA 235 nC @ 10 V ±20V 7600 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH220N20X4

IXTH220N20X4

MOSFET N-CH 200V 220A X4 TO-247

IXYS

2407 18.68
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IXTH220N20X4

Datenblatt

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 5.5mOhm @ 110A, 10V 4.5V @ 250µA 157 nC @ 10 V ±20V 12300 pF @ 25 V - 800W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTT220N20X4HV

IXTT220N20X4HV

MOSFET N-CH 200V 220A X4 TO268HV

IXYS

3870 18.88
- +

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IXTT220N20X4HV

Datenblatt

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 5.5mOhm @ 110A, 10V 4.5V @ 250µA 157 nC @ 10 V ±20V 12300 pF @ 25 V - 800W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTQ30N60L2

IXTQ30N60L2

MOSFET N-CH 600V 30A TO3P

IXYS

273 18.96
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IXTQ30N60L2

Datenblatt

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 240mOhm @ 15A, 10V 4.5V @ 250µA 335 nC @ 10 V ±20V 10700 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5010LVRG

APT5010LVRG

MOSFET N-CH 500V 47A TO264

Microchip Technology

2128 19.14
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APT5010LVRG

Datenblatt

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) - 100mOhm @ 500mA, 10V 4V @ 2.5mA 470 nC @ 10 V - 8900 pF @ 25 V - - - Through Hole
IXFH150N20T

IXFH150N20T

MOSFET N-CH 200V 150A TO247AD

IXYS

3029 19.19
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IXFH150N20T

Datenblatt

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 150A (Tc) 10V 15mOhm @ 75A, 10V 5V @ 4mA 177 nC @ 10 V ±20V 11700 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IGLD60R070D1AUMA3

IGLD60R070D1AUMA3

GANFET N-CH

Infineon Technologies

2764 25.42
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IGLD60R070D1AUMA3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolGaN™ Active N-Channel GaNFET (Gallium Nitride) 600 V 15A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IGT60R070D1ATMA4

IGT60R070D1ATMA4

GANFET N-CH

Infineon Technologies

2731 25.43
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IGT60R070D1ATMA4

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolGaN™ Active N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW90R120C3XKSA1

IPW90R120C3XKSA1

MOSFET N-CH 900V 36A TO247-3

Infineon Technologies

3364 19.43
- +

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IPW90R120C3XKSA1

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 36A (Tc) 10V 120mOhm @ 26A, 10V 3.5V @ 2.9mA 270 nC @ 10 V ±20V 6800 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH80N65X2-4

IXFH80N65X2-4

MOSFET N-CH 650V 80A TO247-4L

IXYS

3870 15.94
- +

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IXFH80N65X2-4

Datenblatt

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 80A (Tc) 10V 38mOhm @ 500mA, 10V 5V @ 4mA 140 nC @ 10 V ±30V 8300 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH110N10L2

IXTH110N10L2

MOSFET N-CH 100V 110A TO247

IXYS

2626 19.77
- +

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IXTH110N10L2

Datenblatt

Bulk Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 18mOhm @ 500mA, 10V 4.5V @ 250µA 260 nC @ 10 V ±20V 10500 pF @ 25 V - 600W (Tc) - Through Hole
IXTK102N65X2

IXTK102N65X2

MOSFET N-CH 650V 102A TO264

IXYS

3040 20.12
- +

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IXTK102N65X2

Datenblatt

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 102A (Tc) 10V 30mOhm @ 51A, 10V 5V @ 250µA 152 nC @ 10 V ±30V 10900 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMBG65R022M1HXTMA1

IMBG65R022M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies

3323 26.96
- +

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IMBG65R022M1HXTMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
NTH4L027N65S3F

NTH4L027N65S3F

MOSFET N-CH 650V 75A TO247-4

onsemi

3493 16.56
- +

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NTH4L027N65S3F

Datenblatt

Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 27.4mOhm @ 35A, 10V 5V @ 3mA 259 nC @ 10 V ±30V 7690 pF @ 400 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK150N30P3

IXFK150N30P3

MOSFET N-CH 300V 150A TO264AA

IXYS

3498 21.36
- +

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IXFK150N30P3

Datenblatt

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 150A (Tc) 10V 19mOhm @ 75A, 10V 5V @ 8mA 197 nC @ 10 V ±20V 12100 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTHL045N065SC1

NTHL045N065SC1

SIC MOS TO247-3L 650V

onsemi

3008 21.69
- +

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NTHL045N065SC1

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 66A (Tc) 15V, 18V 50mOhm @ 25A, 18V 4.3V @ 8mA 105 nC @ 18 V +22V, -8V 1870 pF @ 325 V - 291W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTHL019N65S3H

NTHL019N65S3H

MOSFET N-CH 650V 75A TO247-3

onsemi

2548 21.79
- +

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NTHL019N65S3H

Datenblatt

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) - 19.3mOhm @ 37.5A, 10V 4V @ 14.3mA 282 nC @ 10 V ±30V 15993 pF @ 400 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTR102N65X2

IXTR102N65X2

MOSFET N-CH 650V 54A ISOPLUS247

IXYS

2580 21.86
- +

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Немедленный

IXTR102N65X2

Datenblatt

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 33mOhm @ 51A, 10V 5V @ 250µA 152 nC @ 10 V ±30V 10900 pF @ 25 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
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