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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHB105N60EF-GE3

SIHB105N60EF-GE3

MOSFET N-CH 600V 29A D2PAK

Vishay Siliconix

2001 4.01
- +

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SIHB105N60EF-GE3

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Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 102mOhm @ 13A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1804 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCPF125N65S3

FCPF125N65S3

MOSFET N-CH 650V 24A TO220F

onsemi

990 4.02
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FCPF125N65S3

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Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4.5V @ 2.4mA 44 nC @ 10 V ±30V 1790 pF @ 400 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA50R140CPXK

IPA50R140CPXK

N-CHANNEL POWER MOSFET

Infineon Technologies

3547 0.00
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IPA50R140CPXK

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
RJK4512DPP-00#T2

RJK4512DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

3733 0.00
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RJK4512DPP-00#T2

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
RJ1L12BGNTLL

RJ1L12BGNTLL

NCH 60V 120A POWER MOSFET : RJ1L

Rohm Semiconductor

2024 7.08
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RJ1L12BGNTLL

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Ta) 4.5V, 10V 2.9mOhm @ 40A, 10V 2.5V @ 500µA 175 nC @ 10 V ±20V 9000 pF @ 30 V - 192W (Ta) 150°C (TJ) Surface Mount
IPT014N08NM5ATMA1

IPT014N08NM5ATMA1

MOSFET N-CH 80V 37A/331A HSOF-8

Infineon Technologies

2921 7.38
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IPT014N08NM5ATMA1

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Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 37A (Ta), 331A (Tc) 6V, 10V 1.4mOhm @ 150A, 10V 3.8V @ 280µA 200 nC @ 10 V ±20V 14000 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75631S3ST

HUF75631S3ST

MOSFET N-CH 100V 33A D2PAK

onsemi

2531 4.40
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HUF75631S3ST

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 40mOhm @ 33A, 10V 4V @ 250µA 79 nC @ 20 V ±20V 1220 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP05N100M

IXTP05N100M

MOSFET N-CH 1000V 700MA TO220AB

IXYS

3894 4.06
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IXTP05N100M

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 700mA (Tc) 10V 17Ohm @ 375mA, 10V 4.5V @ 25µA 7.8 nC @ 10 V ±30V 260 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY1R4N120P

IXTY1R4N120P

MOSFET N-CH 1200V 1.4A TO252

IXYS

3875 4.06
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IXTY1R4N120P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1.4A (Tc) 10V - 4.5V @ 100µA - ±20V - - - -55°C ~ 150°C (TJ) Surface Mount
IXFP4N85X

IXFP4N85X

MOSFET N-CH 850V 3.5A TO220AB

IXYS

3695 4.06
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IXFP4N85X

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Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 3.5A (Tc) 10V 2.5Ohm @ 2A, 10V 5.5V @ 250µA 7 nC @ 10 V ±30V 247 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH105N60EF-T1GE3

SIHH105N60EF-T1GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

2850 7.19
- +

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 105mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 2099 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB28N60EF-T1-GE3

SIHB28N60EF-T1-GE3

N-CHANNEL 600V

Vishay Siliconix

3165 6.50
- +

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SIHB28N60EF-T1-GE3

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 123mOhm @ 14A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2714 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB28N60EF-T5-GE3

SIHB28N60EF-T5-GE3

N-CHANNEL 600V

Vishay Siliconix

3274 6.50
- +

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SIHB28N60EF-T5-GE3

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 123mOhm @ 14A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2714 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMBG65R260M1HXTMA1

IMBG65R260M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies

1000 7.40
- +

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Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
FDBL86563-F085

FDBL86563-F085

MOSFET N-CH 60V 240A 8HPSOF

onsemi

2875 2.77
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FDBL86563-F085

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 1.5mOhm @ 80A, 10V 4V @ 250µA 169 nC @ 10 V ±20V 10300 pF @ 30 V - 357W (Tj) -55°C ~ 175°C (TJ) Surface Mount
NTMFS0D7N03CGT1G

NTMFS0D7N03CGT1G

MOSFET N-CH 30V 59A/409A 5DFN

onsemi

2553 5.25
- +

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NTMFS0D7N03CGT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 59A (Ta), 409A (Tc) 10V 0.65mOhm @ 30A, 10V 2.2V @ 280µA 147 nC @ 10 V ±20V 12300 pF @ 15 V - 4W (Ta), 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCPF260N60E

FCPF260N60E

MOSFET N CH 600V 15A TO-220F

onsemi

2140 2.79
- +

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FCPF260N60E

Datenblatt

Tube * Active - - - - - - - - - - - - - -
STB30N65DM6AG

STB30N65DM6AG

AUTOMOTIVE-GRADE N-CHANNEL 650 V

STMicroelectronics

186 6.88
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STB30N65DM6AG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 115mOhm @ 10A, 10V 4.75V @ 250µA 46 nC @ 10 V ±25V 2000 pF @ 100 V - 223W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTBGS2D5N06C

NTBGS2D5N06C

POWER MOSFET, 60 V, 2.5 M?, 224

onsemi

3040 6.60
- +

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NTBGS2D5N06C

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 27A (Ta), 169A (Tc) 10V, 12V 2.5mOhm @ 35A, 12V 4V @ 175µA 45.4 nC @ 10 V ±20V 3510 pF @ 30 V - 3.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCP850N80Z

FCP850N80Z

MOSFET N-CH 800V 8A TO220-3

onsemi

2780 1.00
- +

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FCP850N80Z

Datenblatt

Bulk,Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 850mOhm @ 3A, 10V 4.5V @ 600µA 29 nC @ 10 V ±20V 1315 pF @ 100 V - 136W (Tc) -55°C ~ 150°C (TJ) Through Hole
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