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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQB7N80TM

FQB7N80TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3657 0.00
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FQB7N80TM

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Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 6.6A (Tc) 10V 1.5Ohm @ 3.3A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1850 pF @ 25 V - 3.13W (Ta), 167W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJMQC040N10NS2_R2_00601

PJMQC040N10NS2_R2_00601

100V/ 4.4MOHM/ EXCELLECT LOW FOM

Panjit International Inc.

2128 2.56
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Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
IRFU3410PBF

IRFU3410PBF

MOSFET N-CH 100V 31A IPAK

Infineon Technologies

3669 1.19
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IRFU3410PBF

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 39mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1690 pF @ 25 V - 3W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
NP48N055MHE-S18-AY

NP48N055MHE-S18-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

3960 0.00
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NP48N055MHE-S18-AY

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Bulk * Active - - - - - - - - - - - - - -
IQE065N10NM5CGATMA1

IQE065N10NM5CGATMA1

TRENCH >=100V PG-TTFN-9

Infineon Technologies

2793 3.35
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IQE065N10NM5CGATMA1

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Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 85A (Tc) 6V, 10V 6.5mOhm @ 20A, 10V 3.8V @ 48µA 42 nC @ 10 V ±20V 3000 pF @ 50 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
IPB160N04S4H1ATMA1

IPB160N04S4H1ATMA1

MOSFET N-CH 40V 160A TO263-7

Infineon Technologies

2085 1.00
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IPB160N04S4H1ATMA1

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Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.6mOhm @ 100A, 10V 4V @ 110µA 137 nC @ 10 V ±20V 10920 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS002N10MCLT1G

NTMFS002N10MCLT1G

PTNG 100V LL SO8FL HE

onsemi

2045 3.50
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NTMFS002N10MCLT1G

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 22A (Ta), 175A (Tc) 4.5V, 10V 2.8mOhm @ 50A, 10V 3V @ 351µA 97 nC @ 10 V ±20V 7200 pF @ 50 V - 3W (Ta), 189W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STL125N8F7AG

STL125N8F7AG

AUTOMOTIVE-GRADE N-CHANNEL 80 V

STMicroelectronics

3970 3.08
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STL125N8F7AG

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Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4.5mOhm @ 60A, 10V 4.5V @ 250µA 76 nC @ 10 V ±20V 5570 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP60NF06

STP60NF06

MOSFET N-CH 60V 60A TO220AB

STMicroelectronics

3717 1.85
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STP60NF06

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Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 16mOhm @ 30A, 10V 4V @ 250µA 73 nC @ 10 V ±20V 1660 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVMFS5C450NWFAFT1G

NVMFS5C450NWFAFT1G

MOSFET N-CH 40V 24A/102A 5DFN

onsemi

2674 2.45
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NVMFS5C450NWFAFT1G

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Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 102A (Tc) 10V 3.3mOhm @ 50A, 10V 3.5V @ 65µA 23 nC @ 10 V ±20V 1600 pF @ 25 V - 3.6W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R8006KND3TL1

R8006KND3TL1

HIGH-SPEED SWITCHING NCH 800V 6A

Rohm Semiconductor

2220 3.63
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R8006KND3TL1

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Ta) 10V 900mOhm @ 3A, 10V 4.5V @ 4mA 22 nC @ 10 V ±20V 650 pF @ 100 V - 83W (Tc) 150°C (TJ) Surface Mount
FDMC86340ET80

FDMC86340ET80

MOSFET N-CH 80V 14A/68A POWER33

onsemi

3076 2.36
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FDMC86340ET80

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Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 14A (Ta), 68A (Tc) 8V, 10V 6.5mOhm @ 14A, 10V 4V @ 250µA 49 nC @ 10 V ±20V 2775 pF @ 40 V - 2.8W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF532

IRF532

N-CHANNEL POWER MOSFET

Harris Corporation

2722 0.00
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IRF532

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Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 230mOhm @ 8.3A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 600 pF @ 25 V - 79W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS4C55NT1G

NTMFS4C55NT1G

MOSFET N-CH 30V 78A SO8FL

onsemi

2381 1.00
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NTMFS4C55NT1G

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Tape & Reel (TR),Cut Tape (CT),Bulk * Active - - - - - - - - - - - - - -
SIHA18N60E-GE3

SIHA18N60E-GE3

N-CHANNEL 600V

Vishay Siliconix

3737 3.32
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SIHA18N60E-GE3

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Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 202mOhm @ 9A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA25N50E-GE3

SIHA25N50E-GE3

N-CHANNEL 500V

Vishay Siliconix

3544 3.35
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SIHA25N50E-GE3

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1980 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
N0412N-S19-AY

N0412N-S19-AY

MOSFET N-CH 40V 100A TO220

Renesas Electronics America Inc

2510 1.90
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N0412N-S19-AY

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Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Ta) 10V 3.7mOhm @ 50A, 10V - 100 nC @ 10 V ±20V 5550 pF @ 25 V - 1.5W (Ta), 119W (Tc) 150°C (TJ) Through Hole
FCB199N65S3

FCB199N65S3

MOSFET N-CH 650V 14A D2PAK

onsemi

3919 3.21
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FCB199N65S3

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Tape & Reel (TR),Cut Tape (CT) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 199mOhm @ 7A, 10V 4.5V @ 1.4mA 30 nC @ 10 V ±30V 1225 pF @ 400 V - 98W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF433

IRF433

N-CHANNEL POWER MOSFET

Harris Corporation

2063 0.00
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IRF433

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 4A - - - - - - - 75W - Through Hole
IPB048N06LG

IPB048N06LG

N-CHANNEL POWER MOSFET

Infineon Technologies

2560 0.00
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IPB048N06LG

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
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