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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRLU2905

AUIRLU2905

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier

3101 1.00
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AUIRLU2905

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3709ZSTRRPBF

IRF3709ZSTRRPBF

MOSFET N-CH 30V 87A D2PAK

Infineon Technologies

2906 1.90
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IRF3709ZSTRRPBF

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Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3103PBF

IRL3103PBF

HEXFET POWER MOSFET

International Rectifier

3226 1.00
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IRL3103PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL2203NPBF

IRL2203NPBF

HEXFET POWER MOSFET

International Rectifier

3414 1.00
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IRL2203NPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 1V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
PMK35EP,518

PMK35EP,518

TRANSISTOR >30MHZ

NXP USA Inc.

3391 1.00
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PMK35EP,518

Datenblatt

Bulk TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 14.9A (Tc) 10V 19mOhm @ 9.2A, 10V 3V @ 250µA 42 nC @ 10 V ±25V 2100 pF @ 25 V - 6.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR6225PBF

IRLR6225PBF

MOSFET N-CH 20V 100A DPAK

International Rectifier

2712 1.00
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IRLR6225PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) - 4mOhm @ 21A, 4.5V 1.1V @ 50µA 72 nC @ 4.5 V ±12V 3770 pF @ 10 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50N04S308ATMA1

IPD50N04S308ATMA1

OPTLMOS N-CHANNEL POWER MOSFET

International Rectifier

3387 1.00
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Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 7.5mOhm @ 50A, 10V 4V @ 40µA 35 nC @ 10 V ±20V 2350 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MTW20N20E

MTW20N20E

MTW20N20E

Motorola

2798 1.00
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Bulk * Active - - - - - - - - - - - - - -
IRLR3802TRPBF

IRLR3802TRPBF

IRLR3802 - HEXFET POWER MOSFET

International Rectifier

3831 1.00
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IRLR3802TRPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) 2.8V, 4.5V 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB23N20DPBF

IRFB23N20DPBF

SMPS HEXFET POWER MOSFET

International Rectifier

2759 1.00
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IRFB23N20DPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR8729TRLPBF

IRLR8729TRLPBF

IRLR8729 - 20V-30V N-CHANNEL

International Rectifier

2305 1.00
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IRLR8729TRLPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 8.9mOhm @ 25A, 10V 2.35V @ 25µA 16 nC @ 4.5 V ±20V 1350 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF2804S-7P

AUIRF2804S-7P

PFET, 240A I(D), 40V, 0.0016OHM

International Rectifier

3246 0.00
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AUIRF2804S-7P

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ)
FQA38N30

FQA38N30

38.4A, 300V, N-CHANNEL, MOSFET

Fairchild Semiconductor

3315 1.00
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FQA38N30

Datenblatt

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 300 V 38.4A (Tc) 10V 85mOhm @ 19.2A, 10V 5V @ 250µA 120 nC @ 10 V ±30V 4400 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFL4315PBF

IRFL4315PBF

HEXFET POWER MOSFET

International Rectifier

2838 1.00
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IRFL4315PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 2.6A (Ta) 10V 185mOhm @ 1.6A, 10V 5V @ 250µA 19 nC @ 10 V ±30V 420 pF @ 25 V - 2.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFB3806

AUIRFB3806

AUTOMOTIVE N CHANNEL

International Rectifier

2245 1.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR3303TRPBF

IRFR3303TRPBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier

2709 1.00
- +

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Немедленный

IRFR3303TRPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 10V 31mOhm @ 18A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 750 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD70N12S311ATMA1

IPD70N12S311ATMA1

MOSFET N-CH 120V 70A TO252-31

Infineon Technologies

2812 2.29
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IPD70N12S311ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 11.1mOhm @ 70A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4355 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MCAC80P06Y-TP

MCAC80P06Y-TP

N-CHANNEL MOSFET, DFN5060

Micro Commercial Co

3931 2.46
- +

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MCAC80P06Y-TP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 80A 10V 8mOhm @ 20A, 10V 4V @ 250µA 82 nC @ 10 V ±18V 5450 pF @ 30 V - 120W (Tj) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS3206TRL

AUIRFS3206TRL

AUTOMOTIVE POWER MOSFET

International Rectifier

3221 1.00
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Немедленный

AUIRFS3206TRL

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFN8401TR

AUIRFN8401TR

AUTOMOTIVE HEXFET POWER MOSFET

International Rectifier

2311 1.00
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Немедленный

AUIRFN8401TR

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 84A (Tc) 10V 4.6mOhm @ 50A, 10V 3.9V @ 50µA 66 nC @ 10 V ±20V 2170 pF @ 25 V - 4.2W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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