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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PMK50XP518

PMK50XP518

P-CHANNEL POWER MOSFET

NXP USA Inc.

2506 1.00
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Bulk TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 7.9A (Tc) 4.5V 50mOhm @ 2.8A, 4.5V 950mV @ 250µA 10 nC @ 4.5 V ±12V 1020 pF @ 20 V - 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUC120N04S6N013ATMA1

IAUC120N04S6N013ATMA1

IAUC120N04S6N013ATMA1

Infineon Technologies

3758 2.03
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IAUC120N04S6N013ATMA1

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Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 7V, 10V 1.34mOhm @ 60A, 10V 3V @ 60µA 68 nC @ 10 V ±20V 4260 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISC080N10NM6ATMA1

ISC080N10NM6ATMA1

TRENCH >=100V PG-TDSON-8

Infineon Technologies

3272 2.03
- +

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ISC080N10NM6ATMA1

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Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 13A (Ta), 75A (Tc) 8V, 10V 8.05mOhm @ 20A, 10V 3.3V @ 36µA 24 nC @ 10 V ±20V 1800 pF @ 50 V - 3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMF250XNE115

PMF250XNE115

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.

3086 1.00
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PMF250XNE115

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SIR580DP-T1-RE3

SIR580DP-T1-RE3

N-CHANNEL 80-V (D-S) MOSFET

Vishay Siliconix

3613 1.98
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SIR580DP-T1-RE3

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Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 80 V 35.8A (Ta), 146A (Tc) 7.5V, 10V 2.7mOhm @ 20A, 10V 4V @ 250µA 76 nC @ 10 V ±20V 4100 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR5802DP-T1-RE3

SIR5802DP-T1-RE3

N-CHANNEL 80 V (D-S) MOSFET POWE

Vishay Siliconix

2808 1.98
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SIR5802DP-T1-RE3

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Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 80 V 33.6A (Ta), 137.5A (Tc) 7.5V, 10V 2.9mOhm @ 20A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 3020 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFM15N05L

RFM15N05L

N-CHANNEL POWER MOSFET

Harris Corporation

3201 1.00
- +

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RFM15N05L

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 15A (Tc) 5V 140mOhm @ 7.5A, 5V - - ±10V 900 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
PMGD290UCEA/DG/B2115

PMGD290UCEA/DG/B2115

P-CHANNEL MOSFET

NXP USA Inc.

3581 1.00
- +

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Bulk * Active - - - - - - - - - - - - - -
ON5452518

ON5452518

NOW NEXPERIA ON5452 - RF MOSFET

NXP USA Inc.

2300 1.00
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FCD260N65S3

FCD260N65S3

MOSFET N-CH 650V 12A TO252

onsemi

2760 2.20
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FCD260N65S3

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Tape & Reel (TR),Cut Tape (CT),Bulk SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 260mOhm @ 6A, 10V 4.5V @ 1.2mA 24 nC @ 10 V ±30V 1010 pF @ 400 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISC015N04NM5ATMA1

ISC015N04NM5ATMA1

40V 1.5M OPTIMOS MOSFET SUPERSO8

Infineon Technologies

2898 2.04
- +

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ISC015N04NM5ATMA1

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Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 33A (Ta), 206A (Tc) 7V, 10V 1.5mOhm @ 50A, 10V 3.4V @ 60µA 67 nC @ 10 V ±20V 4800 pF @ 20 V - 3W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI65R600C6

IPI65R600C6

N-CHANNEL POWER MOSFET

Infineon Technologies

2211 1.00
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IPI65R600C6

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
PMV48XPA215

PMV48XPA215

P-CHANNEL MOSFET

NXP USA Inc.

2360 1.00
- +

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PMV48XPA215

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PMV65XP/MI215

PMV65XP/MI215

P-CHANNEL MOSFET

NXP USA Inc.

3169 1.00
- +

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PMV65XP/MI215

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
BSZ0908NDXTMA1

BSZ0908NDXTMA1

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies

2764 1.00
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BSZ0908NDXTMA1

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PMZB420UN

PMZB420UN

SMALL SIGNAL FET

NXP USA Inc.

2312 1.00
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PMZB420UN

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PMZ290UNE315

PMZ290UNE315

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.

3268 1.00
- +

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PMZ290UNE315

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MIC94052BC6TR

MIC94052BC6TR

P-CHANNEL POWER MOSFET

Microchip Technology

3403 1.00
- +

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MIC94052BC6TR

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 6 V 2A (Ta) 1.8V, 4.5V 84mOhm @ 100mA, 4.5V 1.2V @ 250µA - 6V - - 270mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
RM135N100T2

RM135N100T2

MOSFET N-CH 100V 135A TO220-3

Rectron USA

3211 1.01
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 135A (Tc) 10V 4.5mOhm @ 60A, 10V 4.5V @ 250µA - ±20V 7500 pF @ 50 V - 220W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPB80N06SL-07

SPB80N06SL-07

N-CHANNEL AUTOMOTIVE MOSFET

Infineon Technologies

3847 1.00
- +

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SPB80N06SL-07

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Records«Prev1... 890891892893894895896897...2123Next»
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