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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK6217-55C

BUK6217-55C

PFET, 44A I(D), 55V, 0.0285OHM

Nexperia USA Inc.

3644 0.00
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BUK6217-55C

Datenblatt

Bulk * Active - - - - - - - - - - - - -
SIS4604LDN-T1-GE3

SIS4604LDN-T1-GE3

N-CHANNEL 60 V (D-S) MOSFET POWE

Vishay Siliconix

2489 0.97
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SIS4604LDN-T1-GE3

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Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 15.1A (Ta), 45.9A (Tc) 4.5V, 10V 8.9mOhm @ 10A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 1180 pF @ 30 V - 3.6W (Ta), 33.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMTH43M8LFG-7

DMTH43M8LFG-7

MOSFET N-CH 40V PWRDI3333

Diodes Incorporated

3512 1.05
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DMTH43M8LFG-7

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 100A (Tc) 5V, 10V 3mOhm @ 20A, 10V 2.5V @ 250µA 40.1 nC @ 10 V ±20V 2798 pF @ 20 V - 2.62W (Ta), 65.2W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RT1A050ZPTR

RT1A050ZPTR

MOSFET P-CH 12V 5A 8TSST

Rohm Semiconductor

2093 1.05
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RT1A050ZPTR

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Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 5A (Ta) 1.5V, 4.5V 26mOhm @ 5A, 4.5V 1V @ 1mA 34 nC @ 4.5 V ±10V 2800 pF @ 6 V - 600mW (Ta) 150°C (TJ) Surface Mount
SQD15N06-42L_T4GE3

SQD15N06-42L_T4GE3

N-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix

3931 0.98
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SQD15N06-42L_T4GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 4.5V, 10V 42mOhm @ 10A, 10V 2.5V @ 250µA 15 nC @ 10 V ±20V 535 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI6423ADQ-T1-GE3

SI6423ADQ-T1-GE3

MOSFET PCH 20V 10.3/12.5A 8TSSOP

Vishay Siliconix

3374 0.98
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SI6423ADQ-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 10.3A (Ta), 12.5A (Tc) - 9.8mOhm @ 10A, 4.5V 1V @ 250µA 168 nC @ 8 V ±8V 5875 pF @ 10 V - 1.5W (Ta), 2.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ152EP-T1_GE3

SQJ152EP-T1_GE3

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Vishay Siliconix

3078 0.98
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SQJ152EP-T1_GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 114A (Tc) 10V 5.1mOhm @ 15A, 10V 3.5V @ 250µA 27 nC @ 10 V ±20V 1450 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJL9417_R2_00001

PJL9417_R2_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3266 1.06
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Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.5V @ 250µA 107 nC @ 10 V ±20V 6067 pF @ 25 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJL9418_R2_00001

PJL9418_R2_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3098 1.06
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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 2.4mOhm @ 18A, 10V 2.5V @ 250µA 35 nC @ 4.5 V ±20V 4305 pF @ 25 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RM5N650LD

RM5N650LD

MOSFET N-CHANNEL 650V 5A TO252-2

Rectron USA

3692 0.45
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Tc) 10V 900mOhm @ 2.5A, 10V 3.5V @ 250µA - ±30V 460 pF @ 50 V - 49W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM45N60DF

RM45N60DF

MOSFET N-CHANNEL 60V 45A 8DFN

Rectron USA

3164 0.45
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 4.5V, 10V 13mOhm @ 20A, 10V 2.2V @ 250µA - ±20V 2180 pF @ 30 V - 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM5N650IP

RM5N650IP

MOSFET N-CHANNEL 650V 5A TO251

Rectron USA

2743 0.45
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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Tc) 10V 900mOhm @ 2.5A, 10V 3.5V @ 250µA - ±30V 460 pF @ 50 V - 49W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM4N650T2

RM4N650T2

MOSFET N-CHANNEL 650V 4A TO220-3

Rectron USA

2226 0.45
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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 1.2Ohm @ 2.5A, 10V 3.5V @ 250µA - ±30V 280 pF @ 50 V - 46W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD60R1K0PFD7SAUMA1

IPD60R1K0PFD7SAUMA1

CONSUMER PG-TO252-3

Infineon Technologies

2900 1.02
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IPD60R1K0PFD7SAUMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ PFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 4.7A (Tc) 10V 1Ohm @ 1A, 10V 4.5V @ 50µA 6 nC @ 10 V ±20V 230 pF @ 400 V - 26W (Tc) -40°C ~ 150°C (TJ) Surface Mount
PJQ4476AP-AU_R2_000A1

PJQ4476AP-AU_R2_000A1

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3824 1.10
- +

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 6.3A (Ta), 35A (Tc) 4.5V, 10V 25mOhm @ 15A, 10V 2.5V @ 250µA 31 nC @ 10 V ±20V 1519 pF @ 30 V - 2W (Ta), 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DI110N03PQ

DI110N03PQ

MOSFET N-CH 30V 110A 8QFN

Diotec Semiconductor

5000 0.45
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DI110N03PQ

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 110A (Tc) 4.5V, 10V 2.65mOhm @ 20A, 10V 2.5V @ 250µA 14 nC @ 4.5 V ±20V 1860 pF @ 15 V - 56W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJA86EP-T1_BE3

SQJA86EP-T1_BE3

N-CHANNEL 80-V (D-S) 175C MOSFET

Vishay Siliconix

2417 1.01
- +

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SQJA86EP-T1_BE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) 4.5V, 10V 19mOhm @ 8A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 1400 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTGS3433T1G

NTGS3433T1G

MOSFET P-CH 12V 2.35A 6TSOP

onsemi

2613 1.00
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NTGS3433T1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk - Active P-Channel MOSFET (Metal Oxide) 12 V 2.35A (Ta) 2.5V, 4.5V 75mOhm @ 3.3A, 4.5V 1.5V @ 250µA 15 nC @ 4.5 V ±8V 550 pF @ 5 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
RM115N65T2

RM115N65T2

MOSFET N-CH 65V 115A TO220-3

Rectron USA

3814 0.46
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Tube - Active N-Channel MOSFET (Metal Oxide) 65 V 115A (Tc) 4.5V, 10V 4.7mOhm @ 15A, 10V 2.5V @ 250µA - +20V, -12V 5900 pF @ 30 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISP25DP06LMXTSA1

ISP25DP06LMXTSA1

MOSFET P-CH 60V 1.9A SOT223-4

Infineon Technologies

3231 1.00
- +

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ISP25DP06LMXTSA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 1.9A (Ta) 4.5V, 10V 250mOhm @ 1.9A, 10V 2V @ 270µA 13.9 nC @ 10 V ±20V 420 pF @ 30 V - 1.8W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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