Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NTP067N65S3HPOWER MOSFET, N-CHANNEL, SUPERFE |
2141 | 7.14 |
ДобавитьНемедленный |
Datenblatt |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 40A (Tc) | 10V | 67mOhm @ 20A, 10V | 4V @ 3.9mA | 80 nC @ 10 V | ±30V | 3750 pF @ 400 V | - | 266W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXFH270N06T3MOSFET N-CH 60V 270A TO247 |
156 | 7.29 |
ДобавитьНемедленный |
Datenblatt |
Tube | HiperFET™, TrenchT3™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 270A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 12600 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
NTHL041N60S5HNTHL041N60S5H |
300 | 7.39 |
ДобавитьНемедленный |
Datenblatt |
Tube | SuperFET® V | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 57A (Tc) | 10V | 41mOhm @ 28.5A, 10V | 4.3V @ 6.7mA | 108 nC @ 10 V | ±30V | 5840 pF @ 400 V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TSM60NB190CF C0GMOSFET N-CH 600V 18A ITO220S |
3714 | 7.56 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 3.7A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 1311 pF @ 100 V | - | 59.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
SPP20N60S5XKSA1HIGH POWER_LEGACY |
1496 | 7.57 |
ДобавитьНемедленный |
Datenblatt |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 190mOhm @ 13A, 10V | 5.5V @ 1mA | 103 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
G3R450MT17DSIC MOSFET N-CH 9A TO247-3 |
1256 | 7.64 |
ДобавитьНемедленный |
Datenblatt |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 9A (Tc) | 15V | 585mOhm @ 4A, 15V | 2.7V @ 2mA | 18 nC @ 15 V | ±15V | 454 pF @ 1000 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
STW36N60M6MOSFET N-CHANNEL 600V 30A TO247 |
1696 | 7.68 |
ДобавитьНемедленный |
Datenblatt |
Tube | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.75V @ 250µA | 44.3 nC @ 10 V | ±25V | 1960 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
C3M0120090J-TRSICFET N-CH 900V 22A D2PAK-7 |
2339 | 11.80 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3 nC @ 15 V | +18V, -8V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
UF3C120400K3SSICFET N-CH 1200V 7.6A TO247-3 |
730 | 7.78 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 7.6A (Tc) | 12V | 515mOhm @ 5A, 12V | 6V @ 10mA | 27 nC @ 15 V | ±25V | 740 pF @ 100 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IPP030N10N3GXKSA1MOSFET N-CH 100V 100A TO220-3 |
2911 | 7.85 |
ДобавитьНемедленный |
Datenblatt |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 275µA | 206 nC @ 10 V | ±20V | 14800 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
UF3C065080T3SMOSFET N-CH 650V 31A TO220-3 |
4957 | 7.92 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | - | 650 V | 31A (Tc) | 12V | 100mOhm @ 20A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
UJ3C065080T3SMOSFET N-CH 650V 31A TO220-3 |
738 | 7.92 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | - | 650 V | 31A (Tc) | 12V | 100mOhm @ 20A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXFH26N50PMOSFET N-CH 500V 26A TO247AD |
2068 | 7.98 |
ДобавитьНемедленный |
Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 230mOhm @ 13A, 10V | 5.5V @ 4mA | 60 nC @ 10 V | ±30V | 3600 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FCH070N60EMOSFET N-CH 600V 52A TO247 |
269 | 8.05 |
ДобавитьНемедленный |
Datenblatt |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Tc) | 10V | 70mOhm @ 26A, 10V | 3.5V @ 250µA | 166 nC @ 10 V | ±20V | 4925 pF @ 380 V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPW65R095C7XKSA1MOSFET N-CH 650V 24A TO247 |
1420 | 8.24 |
ДобавитьНемедленный |
Datenblatt |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45 nC @ 10 V | ±20V | 2140 pF @ 400 V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FDH44N50MOSFET N-CH 500V 44A TO247-3 |
717 | 8.32 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 120mOhm @ 22A, 10V | 4V @ 250µA | 108 nC @ 10 V | ±30V | 5335 pF @ 25 V | - | 750W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXFP72N20X3MOSFET N-CH 200V 72A TO220 |
106 | 8.49 |
ДобавитьНемедленный |
Datenblatt |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 72A (Tc) | 10V | 20mOhm @ 36A, 10V | 4.5V @ 1.5mA | 55 nC @ 10 V | ±20V | 3780 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
UF3C065080K3SMOSFET N-CH 650V 31A TO247-3 |
536 | 8.51 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | - | 650 V | 31A (Tc) | 12V | 100mOhm @ 20A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IPA075N15N3GXKSA1MOSFET N-CH 150V 43A TO220-3 |
2733 | 8.52 |
ДобавитьНемедленный |
Datenblatt |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 43A (Tc) | 8V, 10V | 7.5mOhm @ 43A, 10V | 4V @ 270µA | 93 nC @ 10 V | ±20V | 7280 pF @ 75 V | - | 39W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
NTHL065N65S3HFMOSFET N-CH 650V 46A TO247-3 |
328 | 8.93 |
ДобавитьНемедленный |
Datenblatt |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 46A (Tc) | - | 65mOhm @ 23A, 10V | 5V @ 1.3mA | 98 nC @ 10 V | ±30V | 4075 pF @ 400 V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |