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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI7738DP-T1-E3

SI7738DP-T1-E3

MOSFET N-CH 150V 30A PPAK SO-8

Vishay Siliconix

2293 3.32
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SI7738DP-T1-E3

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Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 30A (Tc) 10V 38mOhm @ 7.7A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 2100 pF @ 75 V - 5.4W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK100A08N1,S4X

TK100A08N1,S4X

MOSFET N-CH 80V 100A TO220SIS

Toshiba Semiconductor and Storage

3528 3.93
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TK100A08N1,S4X

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Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 10V 3.2mOhm @ 50A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 9000 pF @ 40 V - 45W (Tc) 150°C (TJ) Through Hole
IPA65R190C7XKSA1

IPA65R190C7XKSA1

MOSFET N-CH 650V 8A TO220-FP

Infineon Technologies

2760 1.00
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IPA65R190C7XKSA1

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Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 190mOhm @ 5.7A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6015ENX

R6015ENX

MOSFET N-CH 600V 15A TO220FM

Rohm Semiconductor

2030 3.99
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R6015ENX

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Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 910 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
STV270N4F3

STV270N4F3

MOSFET N-CH 40V 270A 10POWERSO

STMicroelectronics

3216 6.40
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STV270N4F3

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Tape & Reel (TR),Cut Tape (CT) STripFET™ III Active N-Channel MOSFET (Metal Oxide) 40 V 270A (Tc) 10V 1.5mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCP150N65F

FCP150N65F

MOSFET N-CH 650V 24A TO220-3

onsemi

3801 4.04
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FCP150N65F

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Tube HiPerFET™, Polar™ Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 2.4mA 93 nC @ 10 V ±20V 3737 pF @ 100 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG25N50E-GE3

SIHG25N50E-GE3

MOSFET N-CH 500V 26A TO247AC

Vishay Siliconix

3356 4.04
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SIHG25N50E-GE3

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1980 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF13N60NT

FCPF13N60NT

MOSFET N-CH 600V 13A TO220F

onsemi

3375 4.05
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FCPF13N60NT

Datenblatt

Tube SuperMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 258mOhm @ 6.5A, 10V 4V @ 250µA 39.5 nC @ 10 V ±30V 1765 pF @ 100 V - 33.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB33N60ET1-GE3

SIHB33N60ET1-GE3

MOSFET N-CH 600V 33A TO263

Vishay Siliconix

2809 6.47
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SIHB33N60ET1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 16.5A, 10V 4V @ 250µA 150 nC @ 10 V ±30V 3508 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP12N65X2

IXFP12N65X2

MOSFET N-CH 650V 12A TO220AB

IXYS

3920 4.06
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IXFP12N65X2

Datenblatt

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 310mOhm @ 6A, 10V 5V @ 250µA 18.5 nC @ 10 V ±30V 1134 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF3NK100Z

STF3NK100Z

MOSFET N-CH 1000V 2.5A TO220FP

STMicroelectronics

3173 4.07
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STF3NK100Z

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 1000 V 2.5A (Tc) 10V 6Ohm @ 1.25A, 10V 4.5V @ 50µA 18 nC @ 10 V ±30V 601 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN2R5-60PLQ

PSMN2R5-60PLQ

MOSFET N-CH 60V 150A TO220AB

Nexperia USA Inc.

2106 4.07
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PSMN2R5-60PLQ

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 150A (Tc) 4.5V, 10V 2.6mOhm @ 25A, 10V 2.1V @ 1mA 223 nC @ 10 V ±20V - - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHA22N60E-E3

SIHA22N60E-E3

MOSFET N-CH 600V 21A TO220

Vishay Siliconix

3011 4.08
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SIHA22N60E-E3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
STB34N65M5

STB34N65M5

MOSFET N-CH 650V 28A D2PAK

STMicroelectronics

2738 6.85
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STB34N65M5

Datenblatt

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 110mOhm @ 14A, 10V 5V @ 250µA 62.5 nC @ 10 V ±25V 2700 pF @ 100 V - 190W (Tc) 150°C (TJ) Surface Mount
STB24NM60N

STB24NM60N

MOSFET N-CH 600V 17A D2PAK

STMicroelectronics

762 6.88
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STB24NM60N

Datenblatt

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 190mOhm @ 8A, 10V 4V @ 250µA 46 nC @ 10 V ±30V 1400 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP12N65X2M

IXFP12N65X2M

MOSFET N-CH 650V 12A TO220

IXYS

300 4.14
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IXFP12N65X2M

Datenblatt

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 310mOhm @ 6A, 10V 5V @ 250µA 18.5 nC @ 10 V ±30V 1134 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG22N50D-E3

SIHG22N50D-E3

MOSFET N-CH 500V 22A TO247AC

Vishay Siliconix

2654 4.16
- +

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SIHG22N50D-E3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 230mOhm @ 11A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 1938 pF @ 100 V - 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP21N60EF-GE3

SIHP21N60EF-GE3

MOSFET N-CH 600V 21A TO220AB

Vishay Siliconix

3058 4.19
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SIHP21N60EF-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2030 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6012JNXC7G

R6012JNXC7G

MOSFET N-CH 600V 12A TO220FM

Rohm Semiconductor

3329 4.19
- +

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Немедленный

R6012JNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 15V 390mOhm @ 6A, 15V 7V @ 2.5mA 28 nC @ 15 V ±30V 900 pF @ 100 V - 60W (Tc) 150°C (TJ) Through Hole
TK25A60X,S5X

TK25A60X,S5X

MOSFET N-CH 600V 25A TO220SIS

Toshiba Semiconductor and Storage

2169 4.20
- +

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TK25A60X,S5X

Datenblatt

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 125mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
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