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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NVMFS5C612NWFT1G

NVMFS5C612NWFT1G

MOSFET N-CH 60V 34A/225A 5DFN

onsemi

3655 5.48
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NVMFS5C612NWFT1G

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Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 34A (Ta), 225A (Tc) 10V 1.65mOhm @ 50A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 4900 pF @ 25 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBC40STRLPBF

IRFBC40STRLPBF

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix

2355 4.66
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IRFBC40STRLPBF

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI820GPBF

IRFI820GPBF

MOSFET N-CH 500V 2.1A TO220-3

Vishay Siliconix

2808 2.92
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IRFI820GPBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.1A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF840ALPBF

IRF840ALPBF

MOSFET N-CH 500V 8A I2PAK

Vishay Siliconix

2977 2.92
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IRF840ALPBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLI630GPBF

IRLI630GPBF

MOSFET N-CH 200V 6.2A TO220-3

Vishay Siliconix

2460 2.92
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IRLI630GPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 6.2A (Tc) 4V, 5V 400mOhm @ 3.7A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP023N04NGXKSA1

IPP023N04NGXKSA1

MOSFET N-CH 40V 90A TO220-3

Infineon Technologies

3371 1.00
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IPP023N04NGXKSA1

Datenblatt

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 2.3mOhm @ 90A, 10V 4V @ 95µA 120 nC @ 10 V ±20V 10000 pF @ 20 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA057N06N3GXKSA1

IPA057N06N3GXKSA1

MOSFET N-CH 60V 60A TO220-3-31

Infineon Technologies

3472 1.00
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IPA057N06N3GXKSA1

Datenblatt

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 5.7mOhm @ 60A, 10V 4V @ 58µA 82 nC @ 10 V ±20V 6600 pF @ 30 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHF12N60E-E3

SIHF12N60E-E3

MOSFET N-CH 600V 12A TO220

Vishay Siliconix

3250 2.95
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SIHF12N60E-E3

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP7NK80Z

STP7NK80Z

MOSFET N-CH 800V 5.2A TO220AB

STMicroelectronics

3833 2.96
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STP7NK80Z

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 800 V 5.2A (Tc) 10V 1.8Ohm @ 2.6A, 10V 4.5V @ 100µA 56 nC @ 10 V ±30V 1138 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
MCP60P06-BP

MCP60P06-BP

P-CHANNEL MOSFET, TO-220AB(H) PA

Micro Commercial Co

3416 2.96
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MCP60P06-BP

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 18mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 5814 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDBL0330N80

FDBL0330N80

MOSFET N-CH 80V 220A 8HPSOF

onsemi

3579 5.91
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FDBL0330N80

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 220A (Tc) 10V 3mOhm @ 80A, 10V 4V @ 250µA 112 nC @ 10 V ±20V 6320 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMJS1D0N04CTWG

NTMJS1D0N04CTWG

MOSFET N-CH 40V 46A/300A 8LFPAK

onsemi

3646 5.91
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NTMJS1D0N04CTWG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 300A (Tc) 10V 0.92mOhm @ 50A, 10V 3.5V @ 190µA 86 nC @ 10 V ±20V 6100 pF @ 25 V - 3.9W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHH180N60E-T1-GE3

SIHH180N60E-T1-GE3

MOSFET N-CH 600V 19A PPAK 8 X 8

Vishay Siliconix

3496 5.26
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SIHH180N60E-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 180mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STU5N95K3

STU5N95K3

MOSFET N-CH 950V 4A IPAK

STMicroelectronics

2540 3.00
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STU5N95K3

Datenblatt

Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 950 V 4A (Tc) 10V 3.5Ohm @ 2A, 10V 5V @ 100µA 19 nC @ 10 V ±30V 460 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF9N80K5

STF9N80K5

MOSFET N-CH 800V 7A TO220FP

STMicroelectronics

2213 3.00
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STF9N80K5

Datenblatt

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 900mOhm @ 3.5A, 10V 5V @ 100µA 12 nC @ 10 V ±30V 340 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
EPC2218A

EPC2218A

TRANS GAN 100V .0032OHM AECQ101

EPC

3446 5.71
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Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - -
FQP7N80C

FQP7N80C

MOSFET N-CH 800V 6.6A TO220-3

onsemi

2591 3.02
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FQP7N80C

Datenblatt

Bulk,Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 800 V 6.6A (Tc) 10V 1.9Ohm @ 3.3A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1680 pF @ 25 V - 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL3306PBF

IRFSL3306PBF

MOSFET N-CH 60V 120A TO262

Infineon Technologies

2615 3.02
- +

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IRFSL3306PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL60SC216ARMA1

IRL60SC216ARMA1

MOSFET N-CH 60V 324A TO263-7

Infineon Technologies

3303 4.83
- +

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Немедленный

IRL60SC216ARMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 324A (Tc) 4.5V, 10V 1.5mOhm @ 100A, 10V 2.4V @ 250µA 218 nC @ 4.5 V ±20V 16000 pF @ 30 V - 2.4W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK14A65W5,S5X

TK14A65W5,S5X

MOSFET N-CH 650V 13.7A TO220SIS

Toshiba Semiconductor and Storage

2672 3.03
- +

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Немедленный

TK14A65W5,S5X

Datenblatt

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 40W (Tc) 150°C (TJ) Through Hole
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