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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9620STRLPBF

IRF9620STRLPBF

MOSFET P-CH 200V 3.5A D2PAK

Vishay Siliconix

3320 2.79
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IRF9620STRLPBF

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Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB100N10F7

STB100N10F7

MOSFET N-CH 100V 80A D2PAK

STMicroelectronics

2733 3.07
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STB100N10F7

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Tape & Reel (TR),Cut Tape (CT) DeepGATE™, STripFET™ VII Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 8mOhm @ 40A, 10V 4.5V @ 250µA 61 nC @ 10 V ±20V 4369 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJQ404E-T1_GE3

SQJQ404E-T1_GE3

MOSFET N-CH 40V 200A PPAK 8 X 8

Vishay Siliconix

3705 2.94
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SQJQ404E-T1_GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 10V 1.72mOhm @ 20A, 10V 3.5V @ 250µA 270 nC @ 10 V ±20V 16480 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPU02N60C3BKMA1

SPU02N60C3BKMA1

MOSFET N-CH 650V 1.8A TO251-3

Infineon Technologies

3563 1.67
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SPU02N60C3BKMA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5 nC @ 10 V ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA70R450P7SXKSA1

IPA70R450P7SXKSA1

MOSFET N-CH 700V 10A TO220

Infineon Technologies

3926 1.67
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IPA70R450P7SXKSA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 10A (Tc) 10V 450mOhm @ 2.3A, 10V 3.5V @ 120µA 13.1 nC @ 400 V ±16V 424 pF @ 400 V - 22.7W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRFUC20PBF

IRFUC20PBF

MOSFET N-CH 600V 2A TO251AA

Vishay Siliconix

3641 1.68
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IRFUC20PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF710SPBF

IRF710SPBF

MOSFET N-CH 400V 2A D2PAK

Vishay Siliconix

2327 1.68
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IRF710SPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP6N40D-E3

SIHP6N40D-E3

MOSFET N-CH 400V 6A TO220AB

Vishay Siliconix

2518 1.68
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SIHP6N40D-E3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 311 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF5N60M2

STF5N60M2

MOSFET N-CH 600V 3.7A TO220FP

STMicroelectronics

1984 1.68
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STF5N60M2

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Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Tc) 10V 1.4Ohm @ 1.85A, 10V 4V @ 250µA 4.5 nC @ 10 V ±25V 165 pF @ 100 V - 20W (Tc) 150°C (TJ) Through Hole
SIHD6N65E-GE3

SIHD6N65E-GE3

MOSFET N-CH 650V 7A DPAK

Vishay Siliconix

3610 1.69
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SIHD6N65E-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS6H818NWFT1G

NVMFS6H818NWFT1G

MOSFET N-CH 80V 20A/123A 5DFN

onsemi

2494 1.00
- +

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NVMFS6H818NWFT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 20A (Ta), 123A (Tc) 10V 3.7mOhm @ 20A, 10V 4V @ 190µA 46 nC @ 10 V ±20V 3100 pF @ 40 V - 3.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP55NF06

STP55NF06

MOSFET N-CH 60V 50A TO220AB

STMicroelectronics

3641 1.70
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STP55NF06

Datenblatt

Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 27.5A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
STU3N80K5

STU3N80K5

MOSFET N-CH 800V 2.5A IPAK

STMicroelectronics

3641 1.70
- +

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STU3N80K5

Datenblatt

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 3.5Ohm @ 1A, 10V 5V @ 100µA 9.5 nC @ 10 V ±30V 130 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD310PBF

IRFD310PBF

MOSFET N-CH 400V 350MA 4DIP

Vishay Siliconix

2725 1.71
- +

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Немедленный

IRFD310PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 350mA (Ta) 10V 3.6Ohm @ 210mA, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
STP9NK60ZFP

STP9NK60ZFP

MOSFET N-CH 600V 7A TO220FP

STMicroelectronics

2699 1.71
- +

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STP9NK60ZFP

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 950mOhm @ 3.5A, 10V 4.5V @ 100µA 53 nC @ 10 V ±30V 1110 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
RCX160N20

RCX160N20

MOSFET N-CH 200V 16A TO220FM

Rohm Semiconductor

3321 1.71
- +

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RCX160N20

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 180mOhm @ 8A, 10V 5.25V @ 1mA 26 nC @ 10 V ±30V 1370 pF @ 25 V - 2.23W (Ta), 40W (Tc) 150°C (TJ) Through Hole
SIHD690N60E-GE3

SIHD690N60E-GE3

MOSFET N-CH 600V 6.4A DPAK

Vishay Siliconix

2510 1.71
- +

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Немедленный

SIHD690N60E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 6.4A (Tc) 10V 700mOhm @ 2A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 347 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ24PBF

IRFZ24PBF

MOSFET N-CH 60V 17A TO220AB

Vishay Siliconix

2586 1.72
- +

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Немедленный

IRFZ24PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
RCJ300N20TL

RCJ300N20TL

MOSFET N-CH 200V 30A LPTS

Rohm Semiconductor

2604 3.23
- +

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Немедленный

RCJ300N20TL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 30A (Tc) 10V 80mOhm @ 15A, 10V 5V @ 1mA 60 nC @ 10 V ±30V 3200 pF @ 25 V - 1.56W (Ta), 40W (Tc) 150°C (TJ) Surface Mount
SIHU6N62E-GE3

SIHU6N62E-GE3

MOSFET N-CH 620V 6A IPAK

Vishay Siliconix

3401 1.73
- +

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Немедленный

SIHU6N62E-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 620 V 6A (Tc) 10V 900mOhm @ 3A, 10V 4V @ 250µA 34 nC @ 10 V ±30V 578 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
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