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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFN44N100Q3

IXFN44N100Q3

MOSFET N-CH 1000V 38A SOT227B

IXYS

2622 58.93
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IXFN44N100Q3

Datenblatt

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 38A (Tc) 10V 220mOhm @ 22A, 10V 6.5V @ 8mA 264 nC @ 10 V ±30V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN110N85X

IXFN110N85X

MOSFET N-CH 850V 110A SOT227B

IXYS

2579 63.67
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IXFN110N85X

Datenblatt

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 110A (Tc) 10V 33mOhm @ 55A, 10V 5.5V @ 8mA 425 nC @ 10 V ±30V 17000 pF @ 25 V - 1170W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN70N100X

IXFN70N100X

MOSFET N-CH 1000V 56A SOT227B

IXYS

3027 66.09
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IXFN70N100X

Datenblatt

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 56A (Tc) 10V 89mOhm @ 35A, 10V 6V @ 8mA 350 nC @ 10 V ±30V 9150 pF @ 25 V - 1200W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN120N65X2

IXFN120N65X2

MOSFET N-CH 650V 108A SOT227B

IXYS

3401 41.30
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IXFN120N65X2

Datenblatt

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 108A (Tc) 10V 24mOhm @ 54A, 10V 5.5V @ 8mA 225 nC @ 10 V ±30V 15500 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTN30N100L

IXTN30N100L

MOSFET N-CH 1000V 30A SOT227B

IXYS

3921 69.43
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IXTN30N100L

Datenblatt

Bulk Linear Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 20V 450mOhm @ 15A, 20V 5.5V @ 250µA 545 nC @ 20 V ±30V 13700 pF @ 25 V - 800W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MSC040SMA120J

MSC040SMA120J

SICFET N-CH 1200V 53A SOT227

Microchip Technology

3500 43.51
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MSC040SMA120J

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 53A (Tc) 20V 50mOhm @ 40A, 20V 2.8V @ 1mA 137 nC @ 20 V +25V, -10V 1990 pF @ 1000 V - 208W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXFN50N120SK

IXFN50N120SK

SICFET N-CH 1200V 48A SOT227B

IXYS

3403 79.42
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IXFN50N120SK

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 48A (Tc) 20V 52mOhm @ 40A, 20V 2.8V @ 10mA 115 nC @ 20 V +20V, -5V 1895 pF @ 1000 V - - -40°C ~ 175°C (TJ) Chassis Mount
BSM300C12P3E301

BSM300C12P3E301

SICFET N-CH 1200V 300A MODULE

Rohm Semiconductor

3253 1028.57
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BSM300C12P3E301

Datenblatt

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 300A (Tc) - - 5.6V @ 80mA - +22V, -4V 1500 pF @ 10 V Standard 1360W (Tc) -40°C ~ 150°C (TJ) -
NX3008NBKMB,315

NX3008NBKMB,315

MOSFET N-CH 30V 530MA DFN1006B-3

Nexperia USA Inc.

2054 0.36
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NX3008NBKMB,315

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 530mA (Ta) 1.8V, 4.5V 1.4Ohm @ 350mA, 4.5V 1.1V @ 250µA 0.68 nC @ 4.5 V ±8V 50 pF @ 15 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN40ENEX

PMN40ENEX

MOSFET N-CH 30V 5.7A 6TSOP

Nexperia USA Inc.

2513 0.40
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PMN40ENEX

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 5.7A (Ta) 4.5V, 10V 38mOhm @ 4.5A, 10V 2V @ 250µA 11 nC @ 10 V ±20V 294 pF @ 15 V - 530mW (Ta), 4.46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN30UNEX

PMN30UNEX

MOSFET N-CH 20V 4.8A 6TSOP

Nexperia USA Inc.

2404 0.49
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PMN30UNEX

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 4.8A (Ta) 1.5V, 4.5V 36mOhm @ 4.8A, 4.5V 900mV @ 250µA 9 nC @ 4.5 V ±8V 558 pF @ 10 V - 530mW (Ta), 4.46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CEDM7002AE TR PBFREE

CEDM7002AE TR PBFREE

MOSFET N-CH 60V 300MA SOT883L

Central Semiconductor Corp

2481 0.40
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CEDM7002AE TR PBFREE

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 2.5V, 10V 1.4Ohm @ 500mA, 10V 2V @ 250µA 0.5 nC @ 4.5 V 20V 50 pF @ 25 V - 100mW (Ta) -65°C ~ 150°C (TJ) Surface Mount
SSM6J213FE(TE85L,F

SSM6J213FE(TE85L,F

MOSFET P CH 20V 2.6A ES6

Toshiba Semiconductor and Storage

3192 0.49
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SSM6J213FE(TE85L,F

Datenblatt

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 1.5V, 4.5V 103mOhm @ 1.5A, 4.5V 1V @ 1mA 4.7 nC @ 4.5 V ±8V 290 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
RQ6E035ATTCR

RQ6E035ATTCR

MOSFET P-CH 30V 3.5A TSMT6

Rohm Semiconductor

2517 0.41
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RQ6E035ATTCR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 4.5V, 10V 50mOhm @ 3.5A, 10V 2.5V @ 1mA 10 nC @ 10 V ±20V 475 pF @ 15 V - 1.25W (Ta) 150°C (TJ) Surface Mount
SI8823EDB-T2-E1

SI8823EDB-T2-E1

MOSFET P-CH 20V 2.7A 4MICRO FOOT

Vishay Siliconix

3008 0.43
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SI8823EDB-T2-E1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 20 V 2.7A (Tc) 1.5V, 4.5V 95mOhm @ 1A, 4.5V 800mV @ 250µA 10 nC @ 4.5 V ±8V 580 pF @ 10 V - 900mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMV65XPER

PMV65XPER

MOSFET P-CH 20V 2.8A TO236AB

Nexperia USA Inc.

3489 0.44
- +

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PMV65XPER

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 2.8A (Ta) 2.5V, 4.5V 78mOhm @ 2.8A, 4.5V 1.25V @ 250µA 9 nC @ 4.5 V ±12V 618 pF @ 10 V - 480mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMCM4401VPEZ

PMCM4401VPEZ

MOSFET P-CH 12V 3.9A 4WLCSP

Nexperia USA Inc.

7627 0.48
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PMCM4401VPEZ

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk - Active P-Channel MOSFET (Metal Oxide) 12 V 3.9A (Ta) 1.8V, 4.5V 65mOhm @ 3A, 4.5V 900mV @ 250µA 10 nC @ 4.5 V ±8V 415 pF @ 6 V - 400mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMN2075UDW-7

DMN2075UDW-7

MOSFET N-CH 20V 2.8A SOT363

Diodes Incorporated

2421 0.46
- +

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DMN2075UDW-7

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 20 V 2.8A (Ta) 1.5V, 4.5V 48mOhm @ 3A, 4.5V 1V @ 250µA 7 nC @ 4.5 V ±8V 594.3 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI8821EDB-T2-E1

SI8821EDB-T2-E1

MOSFET P-CH 30V 4MICROFOOT

Vishay Siliconix

3640 0.50
- +

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Немедленный

SI8821EDB-T2-E1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 2.5V, 4.5V 135mOhm @ 1A, 4.5V 1.3V @ 250µA 17 nC @ 10 V ±12V 440 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSM6K403TU,LF

SSM6K403TU,LF

MOSFET N-CH 20V 4.2A UF6

Toshiba Semiconductor and Storage

2938 0.51
- +

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Немедленный

SSM6K403TU,LF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 1.5V, 4V 28mOhm @ 3A, 4V 1V @ 1mA 16.8 nC @ 4 V ±10V 1050 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
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