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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFH69N30P

IXFH69N30P

MOSFET N-CH 300V 69A TO247AD

IXYS

3883 12.68
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IXFH69N30P

Datenblatt

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 69A (Tc) 10V 49mOhm @ 500mA, 10V 5V @ 4mA 180 nC @ 10 V ±20V 4960 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW56N60DM2

STW56N60DM2

MOSFET N-CH 600V 50A TO247

STMicroelectronics

3950 12.68
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STW56N60DM2

Datenblatt

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 60mOhm @ 25A, 10V 5V @ 250µA 90 nC @ 10 V ±25V 4100 pF @ 100 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH130N15X4

IXTH130N15X4

MOSFET N-CH 150V 130A TO247

IXYS

2101 12.75
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IXTH130N15X4

Datenblatt

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 8.5mOhm @ 70A, 10V 4.5V @ 250µA 87 nC @ 10 V ±20V 4770 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH24N80P

IXFH24N80P

MOSFET N-CH 800V 24A TO247AD

IXYS

2653 12.79
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IXFH24N80P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 24A (Tc) 10V 400mOhm @ 12A, 10V 5V @ 4mA 105 nC @ 10 V ±30V 7200 pF @ 25 V - 650W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT20N120H

SCT20N120H

SICFET N-CH 1200V 20A H2PAK-2

STMicroelectronics

2964 16.43
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SCT20N120H

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 20V 290mOhm @ 10A, 20V 3.5V @ 1mA 45 nC @ 20 V +25V, -10V 650 pF @ 400 V - 175W (Tc) -55°C ~ 200°C (TJ) Surface Mount
STW45NM50

STW45NM50

MOSFET N-CH 500V 45A TO247-3

STMicroelectronics

2859 12.95
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STW45NM50

Datenblatt

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 500 V 45A (Tc) 10V 100mOhm @ 22.5A, 10V 5V @ 250µA 117 nC @ 10 V ±30V 3700 pF @ 25 V - 417W (Tc) -65°C ~ 150°C (TJ) Through Hole
IXTH6N120

IXTH6N120

MOSFET N-CH 1200V 6A TO247

IXYS

3404 12.95
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IXTH6N120

Datenblatt

Box - Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.6Ohm @ 3A, 10V 5V @ 250µA 56 nC @ 10 V ±20V 1950 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH20N100P

IXFH20N100P

MOSFET N-CH 1000V 20A TO247AD

IXYS

2441 13.02
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IXFH20N100P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 20A (Tc) 10V 570mOhm @ 10A, 10V 6.5V @ 1mA 126 nC @ 10 V ±30V 7300 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVH4L160N120SC1

NVH4L160N120SC1

SICFET N-CH 1200V 17.3A TO247

onsemi

3996 8.83
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NVH4L160N120SC1

Datenblatt

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 17.3A (Tc) 20V 224mOhm @ 12A, 20V 4.3V @ 2.5mA 34 nC @ 20 V +25V, -15V 665 pF @ 800 V - 111W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPT60R022S7XTMA1

IPT60R022S7XTMA1

MOSFET N-CH 600V 23A 8HSOF

Infineon Technologies

2658 18.86
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Tape & Reel (TR),Cut Tape (CT) CoolMOS™S7 Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.44mA 150 nC @ 12 V ±20V 5639 pF @ 300 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFP4568

AUIRFP4568

MOSFET N-CH 150V 171A TO247AC

Infineon Technologies

3300 1.00
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AUIRFP4568

Datenblatt

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 171A (Tc) 10V 5.9mOhm @ 103A, 10V 5V @ 250µA 227 nC @ 10 V ±30V 10470 pF @ 50 V - 517W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP45N65M5

STP45N65M5

MOSFET N-CH 650V 35A TO220

STMicroelectronics

2528 9.03
- +

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STP45N65M5

Datenblatt

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 78mOhm @ 19.5A, 10V 5V @ 250µA 91 nC @ 10 V ±25V 3375 pF @ 100 V - 210W (Tc) 150°C (TJ) Through Hole
NTH4L160N120SC1

NTH4L160N120SC1

SICFET N-CH 1200V 17.3A TO247

onsemi

2738 9.04
- +

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Немедленный

NTH4L160N120SC1

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 17.3A (Tc) 20V 224mOhm @ 12A, 20V 4.3V @ 2.5mA 34 nC @ 20 V +25V, -15V 665 pF @ 800 V - 111W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH120N25X3

IXFH120N25X3

MOSFET N-CH 250V 120A TO247

IXYS

2105 13.44
- +

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IXFH120N25X3

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 12mOhm @ 60A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7870 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH140N20X3

IXFH140N20X3

MOSFET N-CH 200V 140A TO247

IXYS

2312 13.44
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IXFH140N20X3

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 140A (Tc) 10V 9.6mOhm @ 70A, 10V 4.5V @ 4mA 127 nC @ 10 V ±20V 7660 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R037CSFDXKSA1

IPW60R037CSFDXKSA1

MOSFET N CH

Infineon Technologies

3246 13.44
- +

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Немедленный

IPW60R037CSFDXKSA1

Datenblatt

Tube CoolMOS™ CFSD Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) 10V 37mOhm @ 32.6A, 10V 4.5V @ 1.63mA 136 nC @ 10 V ±20V 5623 pF @ 400 V - 245W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW70N60M2

STW70N60M2

MOSFET N-CH 600V 68A TO247

STMicroelectronics

3294 13.54
- +

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Немедленный

STW70N60M2

Datenblatt

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 68A (Tc) 10V 40mOhm @ 34A, 10V 4V @ 250µA 118 nC @ 10 V ±25V 5200 pF @ 100 V - 450W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM60NB099CZ C0G

TSM60NB099CZ C0G

MOSFET N-CHANNEL 600V 38A TO220

Taiwan Semiconductor Corporation

2733 13.56
- +

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Немедленный

TSM60NB099CZ C0G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 99mOhm @ 11.3A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 2587 pF @ 100 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R040CFD7XKSA1

IPW60R040CFD7XKSA1

MOSFET N-CH 600V 50A TO247-3

Infineon Technologies

3784 13.60
- +

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Немедленный

IPW60R040CFD7XKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 40mOhm @ 24.9A, 10V 4.5V @ 1.25mA 109 nC @ 10 V ±20V 4354 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF12N120K5

STF12N120K5

MOSFET N-CH 1200V 12A TO220FP

STMicroelectronics

2718 13.71
- +

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Немедленный

STF12N120K5

Datenblatt

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 690mOhm @ 6A, 10V 5V @ 100µA 44.2 nC @ 10 V ±30V 1370 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
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