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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHP065N60E-GE3

SIHP065N60E-GE3

MOSFET N-CH 600V 40A TO220AB

Vishay Siliconix

2840 7.61
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SIHP065N60E-GE3

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Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 65mOhm @ 16A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 2700 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH110N10P

IXFH110N10P

MOSFET N-CH 100V 110A TO247AD

IXYS

3411 7.65
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IXFH110N10P

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Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 15mOhm @ 500mA, 10V 5V @ 4mA 110 nC @ 10 V ±20V 3550 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH52N30P

IXFH52N30P

MOSFET N-CH 300V 52A TO247AD

IXYS

2534 7.65
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IXFH52N30P

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Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 52A (Tc) 10V 66mOhm @ 500mA, 10V 5V @ 4mA 110 nC @ 10 V ±20V 3490 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK31E60X,S1X

TK31E60X,S1X

MOSFET N-CH 600V 30.8A TO220

Toshiba Semiconductor and Storage

2440 5.40
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TK31E60X,S1X

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Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
IPA60R060P7XKSA1

IPA60R060P7XKSA1

MOSFET N-CHANNEL 600V 48A TO220

Infineon Technologies

2595 7.77
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IPA60R060P7XKSA1

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Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 67 nC @ 10 V ±20V 2895 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R060P7XKSA1

IPP60R060P7XKSA1

MOSFET N-CH 600V 48A TO220-3

Infineon Technologies

3655 1.00
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IPP60R060P7XKSA1

Datenblatt

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 67 nC @ 10 V ±20V 2895 pF @ 400 V - 164W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH140N10P

IXFH140N10P

MOSFET N-CH 100V 140A TO247AD

IXYS

2489 9.80
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IXFH140N10P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 11mOhm @ 70A, 10V 5V @ 4mA 155 nC @ 10 V ±20V 4700 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP72N30X3

IXFP72N30X3

MOSFET N-CH 300V 72A TO220AB

IXYS

3483 9.84
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IXFP72N30X3

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 72A (Tc) 10V 19mOhm @ 36A, 10V 4.5V @ 1.5mA 82 nC @ 10 V ±20V 5400 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH140P05T

IXTH140P05T

MOSFET P-CH 50V 140A TO247

IXYS

3946 9.95
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IXTH140P05T

Datenblatt

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 140A (Tc) 10V 9mOhm @ 70A, 10V 4V @ 250µA 200 nC @ 10 V ±15V 13500 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP72N30X3M

IXFP72N30X3M

MOSFET N-CH 300V 72A TO220

IXYS

3280 9.95
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IXFP72N30X3M

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 72A (Tc) 10V 19mOhm @ 36A, 10V 4.5V @ 1.5mA 82 nC @ 10 V ±20V 5400 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R090CFD7XKSA1

IPP60R090CFD7XKSA1

MOSFET N-CH 600V 25A TO220-3

Infineon Technologies

300 7.79
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IPP60R090CFD7XKSA1

Datenblatt

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 90mOhm @ 11.4A, 10V 4.5V @ 570µA 51 nC @ 10 V ±20V 2103 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP6N50D2

IXTP6N50D2

MOSFET N-CH 500V 6A TO220AB

IXYS

2564 7.80
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IXTP6N50D2

Datenblatt

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) - 500mOhm @ 3A, 0V - 96 nC @ 5 V ±20V 2800 pF @ 25 V Depletion Mode 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP6N100D2

IXTP6N100D2

MOSFET N-CH 1000V 6A TO220AB

IXYS

2978 7.80
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IXTP6N100D2

Datenblatt

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tc) - 2.2Ohm @ 3A, 0V - 95 nC @ 5 V ±20V 2650 pF @ 25 V Depletion Mode 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP4137PBF

IRFP4137PBF

MOSFET N-CH 300V 38A TO247AC

Infineon Technologies

3201 7.80
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IRFP4137PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 69mOhm @ 24A, 10V 5V @ 250µA 125 nC @ 10 V ±20V 5168 pF @ 50 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH26N50P3

IXFH26N50P3

MOSFET N-CH 500V 26A TO247AD

IXYS

3069 7.83
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IXFH26N50P3

Datenblatt

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5V @ 4mA 42 nC @ 10 V ±30V 2220 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP23N50LPBF

IRFP23N50LPBF

MOSFET N-CH 500V 23A TO247-3

Vishay Siliconix

3740 7.86
- +

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IRFP23N50LPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 23A (Tc) 10V 235mOhm @ 14A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 3600 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS011N15MC

NTMFS011N15MC

MOSFET N-CH 150V 10.7A/78A 8PQFN

onsemi

3496 12.90
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NTMFS011N15MC

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 150 V 10.7A (Ta), 78A (Tc) 8V, 10V 11.5mOhm @ 35A, 10V 4.5V @ 194µA 46 nC @ 10 V ±20V 3592 pF @ 75 V - 2.7W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP023N10N5AKSA1

IPP023N10N5AKSA1

MOSFET N-CH 100V 120A TO220-3

Infineon Technologies

2261 7.87
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IPP023N10N5AKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 270µA 210 nC @ 10 V ±20V 15600 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP20N65C3XKSA1

SPP20N65C3XKSA1

MOSFET N-CH 650V 20.7A TO220-3

Infineon Technologies

2816 7.91
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SPP20N65C3XKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH260N055T2

IXTH260N055T2

MOSFET N-CH 55V 260A TO247

IXYS

2725 7.92
- +

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Немедленный

IXTH260N055T2

Datenblatt

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 260A (Tc) 10V 3.3mOhm @ 50A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 10800 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
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