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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQP8N80C

FQP8N80C

MOSFET N-CH 800V 8A TO220-3

onsemi

2867 3.10
- +

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FQP8N80C

Datenblatt

Bulk,Tube QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.55Ohm @ 4A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2050 pF @ 25 V - 178W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS5C604NLAFT1G

NVMFS5C604NLAFT1G

MOSFET N-CH 60V 287A 5DFN

onsemi

3438 1.00
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NVMFS5C604NLAFT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 250µA 52 nC @ 4.5 V ±20V 8900 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLS4030TRLPBF

IRLS4030TRLPBF

MOSFET N-CH 100V 180A D2PAK

Infineon Technologies

2589 1.00
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IRLS4030TRLPBF

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Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 4.3mOhm @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V 11360 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP24N40

FDP24N40

MOSFET N-CH 400V 24A TO220-3

onsemi

2628 3.11
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FDP24N40

Datenblatt

Bulk,Tube UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 400 V 24A (Tc) 10V 175mOhm @ 12A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 3020 pF @ 25 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG15N80AE-GE3

SIHG15N80AE-GE3

MOSFET N-CH 800V 13A TO247AC

Vishay Siliconix

3376 3.11
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Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 350mOhm @ 7.5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1093 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPB21N50C3ATMA1

SPB21N50C3ATMA1

MOSFET N-CH 560V 21A TO263-3

Infineon Technologies

2995 1.00
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SPB21N50C3ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 560 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDPF085N10A

FDPF085N10A

MOSFET N-CH 100V 40A TO220F

onsemi

2847 1.00
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FDPF085N10A

Datenblatt

Bulk,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 8.5mOhm @ 40A, 10V 4V @ 250µA 40 nC @ 10 V ±20V 2695 pF @ 50 V - 33.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK20A60W,S5VX

TK20A60W,S5VX

MOSFET N-CH 600V 20A TO220SIS

Toshiba Semiconductor and Storage

3251 3.12
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TK20A60W,S5VX

Datenblatt

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
TK3R9E10PL,S1X

TK3R9E10PL,S1X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

3714 2.24
- +

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TK3R9E10PL,S1X

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 3.9mOhm @ 50A, 10V 2.5V @ 1mA 96 nC @ 10 V ±20V 6320 pF @ 50 V - 230W (Tc) 175°C Through Hole
TK17A65W,S5X

TK17A65W,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2818 3.12
- +

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TK17A65W,S5X

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C Through Hole
STB17N80K5

STB17N80K5

MOSFET N-CHANNEL 800V 14A D2PAK

STMicroelectronics

2946 5.20
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STB17N80K5

Datenblatt

Tape & Reel (TR),Cut Tape (CT) MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 14A (Tc) 10V 340mOhm @ 7A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 866 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP60NF10

STP60NF10

MOSFET N-CH 100V 80A TO220AB

STMicroelectronics

2278 3.13
- +

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STP60NF10

Datenblatt

Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 23mOhm @ 40A, 10V 4V @ 250µA 104 nC @ 10 V ±20V 4270 pF @ 25 V - 300W (Tc) - Through Hole
FDA38N30

FDA38N30

MOSFET N-CH 300V 38A TO3PN

onsemi

2553 3.32
- +

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FDA38N30

Datenblatt

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 85mOhm @ 19A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2600 pF @ 25 V - 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
RCX511N25

RCX511N25

MOSFET N-CH 250V 51A TO220FM

Rohm Semiconductor

3931 3.32
- +

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RCX511N25

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 51A (Tc) 10V 65mOhm @ 25.5A, 10V 5V @ 1mA 120 nC @ 10 V ±30V 7000 pF @ 25 V - 2.23W (Ta), 40W (Tc) 150°C (TJ) Through Hole
IPP60R280CFD7XKSA1

IPP60R280CFD7XKSA1

MOSFET N-CH 650V 9A TO220-3

Infineon Technologies

3993 3.32
- +

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IPP60R280CFD7XKSA1

Datenblatt

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 280mOhm @ 3.6A, 10V 4.5V @ 180µA 18 nC @ 10 V ±20V 807 pF @ 400 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

MOSFET N-CH 600V 25A PPAK 8 X 8

Vishay Siliconix

2658 5.88
- +

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SIHH26N60E-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 135mOhm @ 13A, 10V 4V @ 250µA 116 nC @ 10 V ±30V 2815 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB9NK90Z

STB9NK90Z

MOSFET N-CH 900V 8A D2PAK

STMicroelectronics

2174 5.22
- +

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STB9NK90Z

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V 1.3Ohm @ 3.6A, 10V 4.5V @ 100µA 72 nC @ 10 V ±30V 2115 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI840GPBF

IRFI840GPBF

MOSFET N-CH 500V 4.6A TO220-3

Vishay Siliconix

2892 3.14
- +

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Немедленный

IRFI840GPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 4.6A (Tc) 10V 850mOhm @ 2.8A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP5800

FDP5800

MOSFET N-CH 60V 14A/80A TO220-3

onsemi

3939 3.16
- +

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Немедленный

FDP5800

Datenblatt

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Ta), 80A (Tc) 4.5V, 10V 6mOhm @ 80A, 10V 2.5V @ 250µA 145 nC @ 10 V ±20V 9160 pF @ 15 V - 242W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7739L1TRPBF

IRF7739L1TRPBF

MOSFET N-CH 40V 46A DIRECTFET

Infineon Technologies

3016 5.75
- +

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Немедленный

IRF7739L1TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 270A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 11880 pF @ 25 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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