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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SUM50020EL-GE3

SUM50020EL-GE3

MOSFET N-CH 60V 120A TO263

Vishay Siliconix

2369 3.21
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SUM50020EL-GE3

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Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 2.1mOhm @ 30A, 10V 2.5V @ 250µA 126 nC @ 10 V ±20V 11113 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM90140E-GE3

SUM90140E-GE3

MOSFET N-CH 200V 90A D2PAK

Vishay Siliconix

2687 3.21
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SUM90140E-GE3

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Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 7.5V, 10V 17mOhm @ 30A, 10V 4V @ 250µA 96 nC @ 10 V ±20V 4132 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STB6NK90ZT4

STB6NK90ZT4

MOSFET N-CH 900V 5.8A D2PAK

STMicroelectronics

2330 3.35
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STB6NK90ZT4

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 900 V 5.8A (Tc) 10V 2Ohm @ 2.9A, 10V 4.5V @ 100µA 60.5 nC @ 10 V ±30V 1350 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI530GPBF

IRFI530GPBF

MOSFET N-CH 100V 9.7A TO220-3

Vishay Siliconix

3586 2.01
- +

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IRFI530GPBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 160mOhm @ 5.8A, 10V 4V @ 250µA 33 nC @ 10 V ±20V 670 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS4610TRLPBF

IRFS4610TRLPBF

MOSFET N-CH 100V 73A D2PAK

Infineon Technologies

2944 3.40
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IRFS4610TRLPBF

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Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3205ZPBF

IRF3205ZPBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies

1990 2.02
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IRF3205ZPBF

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLI530GPBF

IRLI530GPBF

MOSFET N-CH 100V 9.7A TO220-3

Vishay Siliconix

3959 2.02
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IRLI530GPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 4V, 5V 160mOhm @ 5.8A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK22A10N1,S4X

TK22A10N1,S4X

MOSFET N-CH 100V 22A TO220SIS

Toshiba Semiconductor and Storage

2965 1.48
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TK22A10N1,S4X

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Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 10V 13.8mOhm @ 11A, 10V 4V @ 300µA 28 nC @ 10 V ±20V 1800 pF @ 50 V - 30W (Tc) 150°C (TJ) Through Hole
STF12N65M2

STF12N65M2

MOSFET N-CH 650V 8A TO220FP

STMicroelectronics

2947 2.03
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STF12N65M2

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Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 16.5 nC @ 10 V ±25V 535 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT240L

AOT240L

MOSFET N-CH 40V 20A/105A TO220

Alpha & Omega Semiconductor Inc.

3838 2.04
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AOT240L

Datenblatt

Tube - Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 20A (Ta), 105A (Tc) 4.5V, 10V 2.9mOhm @ 20A, 10V 2.2V @ 250µA 72 nC @ 10 V ±20V 4300 pF @ 20 V - 1.9W (Ta), 176W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVMFS5C426NLT1G

NVMFS5C426NLT1G

MOSFET N-CH 40V 41A/237A 5DFN

onsemi

2352 3.87
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NVMFS5C426NLT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 237A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 250µA 93 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STL135N8F7AG

STL135N8F7AG

MOSFET N-CH 80V 130A POWERFLAT

STMicroelectronics

2245 3.41
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STL135N8F7AG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 80 V 130A (Tc) 10V 3.6mOhm @ 13A, 10V 4.5V @ 250µA 103 nC @ 10 V ±20V 6800 pF @ 40 V - 4.8W (Ta), 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
SQM100N10-10_GE3

SQM100N10-10_GE3

MOSFET N-CH 100V 100A TO263

Vishay Siliconix

2167 3.27
- +

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SQM100N10-10_GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 10.5mOhm @ 30A, 10V 2.5V @ 250µA 185 nC @ 10 V ±20V 8050 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK290A65Y,S4X

TK290A65Y,S4X

MOSFET N-CH 650V 11.5A TO220SIS

Toshiba Semiconductor and Storage

2101 2.05
- +

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TK290A65Y,S4X

Datenblatt

Tube DTMOSV Active N-Channel MOSFET (Metal Oxide) 650 V 11.5A (Tc) 10V 290mOhm @ 5.8A, 10V 4V @ 450µA 25 nC @ 10 V ±30V 730 pF @ 300 V - 35W (Tc) 150°C (TJ) Through Hole
BSC026N08NS5ATMA1

BSC026N08NS5ATMA1

MOSFET N-CH 80V 23A/100A TDSON

Infineon Technologies

2006 3.73
- +

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BSC026N08NS5ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 23A (Ta), 100A (Tc) 6V, 10V 2.6mOhm @ 50A, 10V 3.8V @ 115µA 92 nC @ 10 V ±20V 6800 pF @ 40 V - 2.5W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STL22N65M5

STL22N65M5

MOSFET N-CH 650V 15A PWRFLAT HV

STMicroelectronics

3724 2.05
- +

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Немедленный

STL22N65M5

Datenblatt

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 210mOhm @ 8.5A, 10V 5V @ 250µA 36 nC @ 10 V ±25V 1345 pF @ 100 V - 2.8W (Ta), 110W (Tc) 150°C (TJ) Surface Mount
IRFS7734TRLPBF

IRFS7734TRLPBF

MOSFET N-CH 75V 183A D2PAK

Infineon Technologies

2602 3.47
- +

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Немедленный

IRFS7734TRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 183A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V 3.7V @ 250µA 270 nC @ 10 V ±20V 10150 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CSD16415Q5T

CSD16415Q5T

MOSFET N-CH 25V 100A 8VSON

Texas Instruments

3838 2.95
- +

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CSD16415Q5T

Datenblatt

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Ta) 4.5V, 10V 1.15mOhm @ 40A, 10V 1.9V @ 250µA 29 nC @ 4.5 V +16V, -12V 4100 pF @ 12.5 V - 3.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TK34E10N1,S1X

TK34E10N1,S1X

MOSFET N-CH 100V 75A TO220

Toshiba Semiconductor and Storage

3383 1.51
- +

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Немедленный

TK34E10N1,S1X

Datenblatt

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 9.5mOhm @ 17A, 10V 4V @ 500µA 38 nC @ 10 V ±20V 2600 pF @ 50 V - 103W (Tc) 150°C (TJ) Through Hole
IPB120N04S401ATMA1

IPB120N04S401ATMA1

MOSFET N-CH 40V 120A D2PAK

Infineon Technologies

3403 1.00
- +

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Немедленный

IPB120N04S401ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.5mOhm @ 100A, 10V 4V @ 140µA 176 nC @ 10 V ±20V 14000 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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