Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI4116DY-T1-E3

SI4116DY-T1-E3

MOSFET N-CH 25V 18A 8SO

Vishay Siliconix

3093 1.31
- +

Добавить

Немедленный

SI4116DY-T1-E3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 25 V 18A (Tc) 2.5V, 10V 8.6mOhm @ 10A, 10V 1.4V @ 250µA 56 nC @ 10 V ±12V 1925 pF @ 15 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN2R5-30YL,115

PSMN2R5-30YL,115

MOSFET N-CH 30V 100A LFPAK56

Nexperia USA Inc.

3511 1.31
- +

Добавить

Немедленный

PSMN2R5-30YL,115

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 2.4mOhm @ 15A, 10V 2.15V @ 1mA 57 nC @ 10 V ±20V 3468 pF @ 12 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCD5N60TM-WS

FCD5N60TM-WS

MOSFET N-CH 600V 4.6A DPAK

onsemi

2279 1.41
- +

Добавить

Немедленный

FCD5N60TM-WS

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.6A (Tc) 10V 950mOhm @ 2.3A, 10V 5V @ 250µA 16 nC @ 10 V ±30V 600 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCD3400N80Z

FCD3400N80Z

MOSFET N-CH 800V 2A DPAK

onsemi

2859 1.41
- +

Добавить

Немедленный

FCD3400N80Z

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 4.5V @ 200µA 9.6 nC @ 10 V ±20V 400 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIJ150DP-T1-GE3

SIJ150DP-T1-GE3

MOSFET N-CH 45V 30.9A/110A PPAK

Vishay Siliconix

3457 1.32
- +

Добавить

Немедленный

SIJ150DP-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 45 V 30.9A (Ta), 110A (Tc) 4.5V, 10V 2.83mOhm @ 15A, 10V 2.3V @ 250µA 70 nC @ 10 V +20V, -16V 4000 pF @ 20 V - 5.2W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DN1509K1-G

DN1509K1-G

MOSFET N-CH 90V 200MA SOT23-5

Microchip Technology

3206 0.79
- +

Добавить

Немедленный

DN1509K1-G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 90 V 200mA (Tj) 0V 6Ohm @ 200mA, 0V - - ±20V 150 pF @ 25 V Depletion Mode 490mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIRC16DP-T1-GE3

SIRC16DP-T1-GE3

MOSFET N-CH 25V 60A PPAK SO-8

Vishay Siliconix

2712 1.32
- +

Добавить

Немедленный

SIRC16DP-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 4.5V, 10V 0.96mOhm @ 15A, 10V 2.4V @ 250µA 48 nC @ 4.5 V +20V, -16V 5150 pF @ 10 V - 54.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR186DP-T1-RE3

SIR186DP-T1-RE3

MOSFET N-CH 60V 60A PPAK SO-8

Vishay Siliconix

3185 1.32
- +

Добавить

Немедленный

SIR186DP-T1-RE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 6V, 10V 4.5mOhm @ 15A, 10V 3.6V @ 250µA 37 nC @ 10 V ±20V 1710 pF @ 30 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA01DP-T1-GE3

SIRA01DP-T1-GE3

MOSFET P-CH 30V 26A/60A PPAK SO8

Vishay Siliconix

3791 1.32
- +

Добавить

Немедленный

SIRA01DP-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30 V 26A (Ta), 60A (Tc) 4.5V, 10V 4.9mOhm @ 15A, 10V 2.2V @ 250µA 112 nC @ 10 V +16V, -20V 3490 pF @ 15 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS4685

FDS4685

MOSFET P-CH 40V 8.2A 8SOIC

onsemi

3402 1.02
- +

Добавить

Немедленный

FDS4685

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 40 V 8.2A (Ta) 4.5V, 10V 27mOhm @ 8.2A, 10V 3V @ 250µA 27 nC @ 5 V ±20V 1872 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPC100N04S5L2R6ATMA1

IPC100N04S5L2R6ATMA1

MOSFET N-CH 40V 100A 8TDSON-34

Infineon Technologies

3634 1.00
- +

Добавить

Немедленный

IPC100N04S5L2R6ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 2.6mOhm @ 50A, 10V 2V @ 30µA 55 nC @ 10 V ±16V 2925 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ033NE2LS5ATMA1

BSZ033NE2LS5ATMA1

MOSFET N-CH 25V 18A/40A TSDSON

Infineon Technologies

3966 1.36
- +

Добавить

Немедленный

BSZ033NE2LS5ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 18A (Ta), 40A (Tc) 4.5V, 10V 3.3mOhm @ 20A, 10V 2V @ 250µA 18.3 nC @ 10 V ±16V 1230 pF @ 12 V - 2.1W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN2R0-25YLDX

PSMN2R0-25YLDX

MOSFET N-CH 25V 100A LFPAK56

Nexperia USA Inc.

2890 1.33
- +

Добавить

Немедленный

PSMN2R0-25YLDX

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) 4.5V, 10V 2.09mOhm @ 25A, 10V 2.2V @ 1mA 34.1 nC @ 10 V ±20V 2485 pF @ 12 V Schottky Diode (Body) 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
XPN9R614MC,L1XHQ

XPN9R614MC,L1XHQ

MOSFET P-CH 40V 40A 8TSON

Toshiba Semiconductor and Storage

2926 1.47
- +

Добавить

Немедленный

XPN9R614MC,L1XHQ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Ta) 4.5V, 10V 9.6mOhm @ 20A, 10V 2.1V @ 500µA 64 nC @ 10 V +10V, -20V 3000 pF @ 10 V - 840mW (Ta), 100W (Tc) 175°C Surface Mount
IPD80R2K8CEATMA1

IPD80R2K8CEATMA1

MOSFET N-CH 800V 1.9A TO252-3

Infineon Technologies

2731 1.00
- +

Добавить

Немедленный

IPD80R2K8CEATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 800 V 1.9A (Tc) 10V 2.8Ohm @ 1.1A, 10V 3.9V @ 120µA 12 nC @ 10 V ±20V 290 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMT6010LSS-13

DMT6010LSS-13

MOSFET N-CH 60V 14A 8SO T&R 2

Diodes Incorporated

2880 1.43
- +

Добавить

Немедленный

DMT6010LSS-13

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Ta) 4.5V, 10V 8mOhm @ 20A, 10V 2V @ 250µA 41.3 nC @ 10 V ±20V 2090 pF @ 30 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TK33S10N1Z,LXHQ

TK33S10N1Z,LXHQ

MOSFET N-CH 100V 33A DPAK

Toshiba Semiconductor and Storage

2206 1.49
- +

Добавить

Немедленный

TK33S10N1Z,LXHQ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Ta) 10V 9.7mOhm @ 16.5A, 10V 4V @ 500µA 28 nC @ 10 V ±20V 2050 pF @ 10 V - 125W (Tc) 175°C Surface Mount
SQJ411EP-T1_GE3

SQJ411EP-T1_GE3

MOSFET P-CH 12V 60A PPAK SO-8

Vishay Siliconix

2392 1.39
- +

Добавить

Немедленный

SQJ411EP-T1_GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 60A (Tc) 2.5V, 4.5V 5.8mOhm @ 15A, 4.5V 1.5V @ 250µA 150 nC @ 4.5 V ±8V 9100 pF @ 6 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ22DN20NS3GATMA1

BSZ22DN20NS3GATMA1

MOSFET N-CH 200V 7A 8TSDSON

Infineon Technologies

3339 1.00
- +

Добавить

Немедленный

BSZ22DN20NS3GATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 225mOhm @ 3.5A, 10V 4V @ 13µA 5.6 nC @ 10 V ±20V 430 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ068N06NSATMA1

BSZ068N06NSATMA1

MOSFET N-CH 60V 40A TSDSON

Infineon Technologies

3519 1.00
- +

Добавить

Немедленный

BSZ068N06NSATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 6V, 10V 6.8mOhm @ 20A, 10V 3.3V @ 20µA 21 nC @ 10 V ±20V 1500 pF @ 30 V - 2.1W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 42446 Records«Prev1... 649650651652653654655656...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи