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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF47P06

FQPF47P06

MOSFET P-CH 60V 30A TO220F

onsemi

3670 1.00
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FQPF47P06

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Bulk,Tube QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 26mOhm @ 15A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3600 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUM65N20-30-E3

SUM65N20-30-E3

MOSFET N-CH 200V 65A TO263

Vishay Siliconix

2290 5.13
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SUM65N20-30-E3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 65A (Tc) 10V 30mOhm @ 30A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 5100 pF @ 25 V - 3.75W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NDP6060L

NDP6060L

MOSFET N-CH 60V 48A TO220-3

onsemi

2438 3.22
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NDP6060L

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Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 5V, 10V 20mOhm @ 24A, 10V 2V @ 250µA 60 nC @ 5 V ±16V 2000 pF @ 25 V - 100W (Tc) -65°C ~ 175°C (TJ) Through Hole
IXTY08N100D2

IXTY08N100D2

MOSFET N-CH 1000V 800MA TO252

IXYS

3324 3.24
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IXTY08N100D2

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Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 800mA (Tc) - 21Ohm @ 400mA, 0V - 14.6 nC @ 5 V ±20V 325 pF @ 25 V Depletion Mode 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB40NF20

STB40NF20

MOSFET N-CH 200V 40A D2PAK

STMicroelectronics

3304 5.41
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STB40NF20

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Tape & Reel (TR),Cut Tape (CT) STripFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 40A (Tc) 10V 45mOhm @ 20A, 10V 4V @ 250µA 75 nC @ 10 V ±20V 2500 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDBL0240N100

FDBL0240N100

MOSFET N-CH 100V 210A 8HPSOF

onsemi

2547 6.54
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FDBL0240N100

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 210A (Tc) 10V 2.8mOhm @ 80A, 10V 4V @ 250µA 111 nC @ 10 V ±20V 8755 pF @ 50 V - 3.5W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP24N60M2

STP24N60M2

MOSFET N-CH 600V 18A TO220

STMicroelectronics

2826 3.30
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STP24N60M2

Datenblatt

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 9A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 1060 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS86202ET120

FDMS86202ET120

MOSFET N-CH 120V 13.5/102A PWR56

onsemi

2486 6.61
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FDMS86202ET120

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 120 V 13.5A (Ta), 102A (Tc) 6V, 10V 7.2mOhm @ 13.5A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 4585 pF @ 60 V - 3.3W (Ta), 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMNR55-40SSHJ

PSMNR55-40SSHJ

PSMNR55-40SSH/SOT1235/LFPAK88

Nexperia USA Inc.

3951 6.22
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PSMNR55-40SSHJ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 500A (Ta) 10V 0.55mOhm @ 25A, 10V 3.6V @ 1mA 267 nC @ 10 V ±20V 21162 pF @ 25 V - 375W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRFB3207PBF

IRFB3207PBF

MOSFET N-CH 75V 170A TO220AB

Infineon Technologies

2300 1.00
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IRFB3207PBF

Datenblatt

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 170A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTMFS6H800NT1G

NTMFS6H800NT1G

MOSFET N-CH 80V 28A/203A 5DFN

onsemi

3647 1.00
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NTMFS6H800NT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 203A (Tc) 6V, 10V 2.1mOhm @ 50A, 10V 4V @ 330µA 85 nC @ 10 V ±20V 5530 pF @ 40 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN7R0-100PS,127

PSMN7R0-100PS,127

MOSFET N-CH 100V 100A TO220AB

Nexperia USA Inc.

3334 1.00
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PSMN7R0-100PS,127

Datenblatt

Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 12mOhm @ 15A, 10V 4V @ 1mA 125 nC @ 10 V ±20V 6686 pF @ 50 V - 269W (Tc) - Through Hole
STP11N60DM2

STP11N60DM2

MOSFET N-CH 600V 10A TO220

STMicroelectronics

3728 1.93
- +

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STP11N60DM2

Datenblatt

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 420mOhm @ 5A, 10V 5V @ 250µA 16.5 nC @ 10 V ±25V 614 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH6N100D2

IXTH6N100D2

MOSFET N-CH 1000V 6A TO247

IXYS

2637 9.18
- +

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IXTH6N100D2

Datenblatt

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tc) - 2.2Ohm @ 3A, 0V - 95 nC @ 5 V ±20V 2650 pF @ 25 V Depletion Mode 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH1N200P3

IXTH1N200P3

MOSFET N-CH 2000V 1A TO247

IXYS

2002 9.22
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IXTH1N200P3

Datenblatt

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 2000 V 1A (Tc) 10V 40Ohm @ 500mA, 10V 4V @ 250µA 23.5 nC @ 10 V ±20V 646 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R099C6FKSA1

IPW60R099C6FKSA1

MOSFET N-CH 600V 37.9A TO247-3

Infineon Technologies

2099 9.36
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IPW60R099C6FKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 18.1A, 10V 3.5V @ 1.21mA 119 nC @ 10 V ±20V 2660 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT020N10N5ATMA1

IPT020N10N5ATMA1

MOSFET N-CH 100V 31A/260A 8HSOF

Infineon Technologies

2490 7.37
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IPT020N10N5ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Ta), 260A (Tc) 6V, 10V 2mOhm @ 150A, 10V 3.8V @ 202µA 152 nC @ 10 V ±20V 11000 pF @ 50 V - 273W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOT20S60L

AOT20S60L

MOSFET N-CH 600V 20A TO220

Alpha & Omega Semiconductor Inc.

2152 3.39
- +

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AOT20S60L

Datenblatt

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 199mOhm @ 10A, 10V 4.1V @ 250µA 19.8 nC @ 10 V ±30V 1038 pF @ 100 V - 266W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF100B201

IRF100B201

MOSFET N-CH 100V 192A TO220AB

Infineon Technologies

3292 1.00
- +

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IRF100B201

Datenblatt

Bulk,Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 192A (Tc) 10V 4.2mOhm @ 115A, 10V 4V @ 250µA 255 nC @ 10 V ±20V 9500 pF @ 50 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP90142E-GE3

SUP90142E-GE3

MOSFET N-CH 200V 90A TO220AB

Vishay Siliconix

2003 3.43
- +

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SUP90142E-GE3

Datenblatt

Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 7.5V, 10V 15.2mOhm @ 30A, 10V 4V @ 250µA 87 nC @ 10 V ±20V 31200 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
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