Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SSW2N60BTM

SSW2N60BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

4632 0.43
- +

Добавить

Немедленный

SSW2N60BTM

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 5Ohm @ 1A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 3.13W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MTB55N06Z

MTB55N06Z

N-CHANNEL POWER MOSFET

onsemi

3606 0.43
- +

Добавить

Немедленный

MTB55N06Z

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
MTD5N25E1

MTD5N25E1

NFET DPAK 250V 1.0R

onsemi

3450 0.43
- +

Добавить

Немедленный

Bulk * Active - - - - - - - - - - - - - -
FQU10N20LTU

FQU10N20LTU

MOSFET N-CH 200V 7.6A IPAK

Fairchild Semiconductor

3190 0.43
- +

Добавить

Немедленный

FQU10N20LTU

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7.6A (Tc) 5V, 10V 360mOhm @ 3.8A, 10V 2V @ 250µA 17 nC @ 5 V ±20V 830 pF @ 25 V - 2.5W (Ta), 51W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP17N08L

FQP17N08L

MOSFET N-CH 80V 16.5A TO220-3

Fairchild Semiconductor

2957 0.43
- +

Добавить

Немедленный

FQP17N08L

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 16.5A (Tc) 5V, 10V 100mOhm @ 8.25A, 10V 2V @ 250µA 11.5 nC @ 5 V ±20V 520 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK2111-T1-AY

2SK2111-T1-AY

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc

2500 0.43
- +

Добавить

Немедленный

2SK2111-T1-AY

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRF512

IRF512

N-CHANNEL POWER MOSFET

Harris Corporation

1663 0.43
- +

Добавить

Немедленный

IRF512

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 4.9A (Tc) 10V 740mOhm @ 3.4A, 10V 4V @ 250µA 7.7 nC @ 10 V ±20V 135 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7628-55A/C1118

BUK7628-55A/C1118

N-CHANNEL POWER MOSFET

NXP USA Inc.

1600 0.43
- +

Добавить

Немедленный

Bulk * Active - - - - - - - - - - - - - -
RFP2N12

RFP2N12

N-CHANNEL, MOSFET

Harris Corporation

1550 0.43
- +

Добавить

Немедленный

RFP2N12

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 2A (Tc) 10V 1.75Ohm @ 2A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR422

IRFR422

N-CHANNEL POWER MOSFET

Harris Corporation

1139 0.43
- +

Добавить

Немедленный

IRFR422

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.2A (Tc) 10V 4Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SP000629364

SP000629364

IPP60R950C6 - 600V N-CHANNEL

Infineon Technologies

1000 0.43
- +

Добавить

Немедленный

SP000629364

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLR3802PBF

IRLR3802PBF

MOSFET N-CH 12V 84A DPAK

International Rectifier

9369 0.44
- +

Добавить

Немедленный

IRLR3802PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) - 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB03N60C3

SPB03N60C3

N-CHANNEL POWER MOSFET

Infineon Technologies

8154 0.44
- +

Добавить

Немедленный

SPB03N60C3

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLU3802PBF

IRLU3802PBF

HEXFET POWER MOSFET

International Rectifier

6579 0.44
- +

Добавить

Немедленный

IRLU3802PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) 2.8V, 4.5V 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
DIT095N08

DIT095N08

MOSFET N-CH 80V 95A TO220AB

Diotec Semiconductor

1000 0.97
- +

Добавить

Немедленный

DIT095N08

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 95A (Tc) 10V 8mOhm @ 40A, 10V 4V @ 250µA 109 nC @ 10 V ±20V 6800 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
SFR9024TF

SFR9024TF

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

5750 0.44
- +

Добавить

Немедленный

SFR9024TF

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 7.8A (Tc) 10V 280mOhm @ 3.9A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 600 pF @ 25 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFW840BTM

IRFW840BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

4800 0.44
- +

Добавить

Немедленный

IRFW840BTM

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 800mOhm @ 4A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1800 pF @ 25 V - 3.13W (Ta), 134W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF76121S3

HUF76121S3

N-CHANNEL POWER MOSFET

Harris Corporation

3600 0.44
- +

Добавить

Немедленный

Bulk * Active - - - - - - - - - - - - - -
RJK0368DPA-WS#J0

RJK0368DPA-WS#J0

POWER TRANSISTOR, MOSFET

Renesas Electronics America Inc

2085 0.44
- +

Добавить

Немедленный

Bulk * Active - - - - - - - - - - - - - -
BUK9511-55A,127

BUK9511-55A,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.

2002 0.44
- +

Добавить

Немедленный

BUK9511-55A,127

Datenblatt

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Ta) - 10mOhm @ 25A, 10V 2V @ 1mA - ±10V 4230 pF @ 25 V - 166W (Ta) -55°C ~ 175°C (TJ) Through Hole
Total 42446 Records«Prev1... 337338339340341342343344...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи