| Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
                
                     
                
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                    PJQ5466A1_R2_0000160V N-CHANNEL ENHANCEMENT MODE M  |  
                2990 | 0.63 | 
                
                    
                    ДобавитьНемедленный | 
                
                   Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.4A (Ta), 48A (Tc) | 4.5V, 10V | 17mOhm @ 20A, 10V | 2.5V @ 250µA | 13.5 nC @ 4.5 V | ±20V | 1574 pF @ 25 V | - | 2W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
                
                     
                
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                    PJD9P06A-AU_L2_000A160V P-CHANNEL ENHANCEMENT MODE M  |  
                2728 | 0.63 | 
                
                    
                    ДобавитьНемедленный | 
                
                   Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 2.5A (Ta), 7A (Tc) | 4.5V, 10V | 170mOhm @ 3.5A, 10V | 2.5V @ 250µA | 8.3 nC @ 10 V | ±20V | 430 pF @ 30 V | - | 2W (Ta), 15.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
                
                     
                
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                    AUIRFC8407TRAUIRFC8407 - 30V-250V N-CHANNEL  |  
                306276 | 0.52 | 
                
                    
                    ДобавитьНемедленный | 
                
                   Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
                
                     
                
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                    IRF6665TRPBFIRF6665 - 12V-300V N-CHANNEL POW  |  
                88562 | 0.52 | 
                
                    
                    ДобавитьНемедленный | 
                
                
                  
                    
                 
                     Datenblatt  | 
				 
                Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | 
                
                     
                
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                    BUK7509-55A,127NEXPERIA BUK7509-55A - 75A, 55V  |  
                20000 | 20000.00 | 
                
                    
                    ДобавитьНемедленный | 
                
                
                  
                    
                 
                     Datenblatt  | 
				 
                Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 9mOhm @ 25A, 10V | 4V @ 1mA | 62 nC @ 0 V | ±20V | 3271 pF @ 25 V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | |
                
                     
                
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                    FDD6680ASMOSFET N-CH 30V 55A TO252  |  
                10485 | 0.52 | 
                
                    
                    ДобавитьНемедленный | 
                
                
                  
                    
                 
                     Datenblatt  | 
				 
                Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 55A (Ta) | 4.5V, 10V | 10.5mOhm @ 12.5A, 10V | 3V @ 1mA | 29 nC @ 10 V | ±20V | 1200 pF @ 15 V | - | 60W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 
                
                     
                
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                    BUK7509-55A,127NEXPERIA BUK7509-55A - 75A, 55V  |  
                3370 | 3370.00 | 
                
                    
                    ДобавитьНемедленный | 
                
                
                  
                    
                 
                     Datenblatt  | 
				 
                Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 9mOhm @ 25A, 10V | 4V @ 1mA | 62 nC @ 0 V | ±20V | 3271 pF @ 25 V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | |
                
                     
                
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                    G65P06KP60V,RD(MAX)<18M@-10V,VTH-2V~-3.  |  
                6649 | 1.49 | 
                
                    
                    ДобавитьНемедленный | 
                
                
                  
                    
                 
                     Datenblatt  | 
				 
                Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 10V | 18mOhm @ 20A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 5814 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
                
                     
                
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                    PJQ2405_R1_0000120V P-CHANNEL ENHANCEMENT MODE M  |  
                2420 | 0.64 | 
                
                    
                    ДобавитьНемедленный | 
                
                   Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 7.2A (Ta) | 1.8V, 4.5V | 32mOhm @ 7.2A, 4.5V | 900mV @ 250µA | 18.9 nC @ 4.5 V | ±8V | 1785 pF @ 10 V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
                
                     
                
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                    G50N03KN30V,RD(MAX)<7M@10V,RD(MAX)<12M@  |  
                2490 | 0.64 | 
                
                    
                    ДобавитьНемедленный | 
                
                
                  
                    
                 
                     Datenblatt  | 
				 
                Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 65A | - | 7mOhm @ 20A, 10V | 2.5V @ 250µA | 16.6 nC @ 10 V | ±20V | 950 pF @ 15 V | - | 48W | -55°C ~ 150°C (TJ) | Surface Mount | 
                
                     
                
                 | 
				
                    PJL9413_R2_0000130V P-CHANNEL ENHANCEMENT MODE M  |  
                2360 | 0.64 | 
                
                    
                    ДобавитьНемедленный | 
                
                   Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 15.5mOhm @ 10A, 10V | 2.5V @ 250µA | 14 nC @ 4.5 V | ±20V | 1556 pF @ 15 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
                
                     
                
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                    G06N06SN60V,RD(MAX)<22M@10V,RD(MAX)<35M  |  
                2146 | 0.64 | 
                
                    
                    ДобавитьНемедленный | 
                
                
                  
                    
                 
                     Datenblatt  | 
				 
                Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8A | - | 22mOhm @ 6A, 10V | 2.4V @ 250µA | 46 nC @ 10 V | ±20V | 1600 pF @ 30 V | - | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 
                
                     
                
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                    G110N06KN60V,RD(MAX)<6.4M@10V,RD(MAX)<8.  |  
                4159 | 1.52 | 
                
                    
                    ДобавитьНемедленный | 
                
                
                  
                    
                 
                     Datenblatt  | 
				 
                Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 4.5V, 10V | 6.4mOhm @ 4A, 10V | 2.5V @ 250µA | 113 nC @ 10 V | ±20V | 5538 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
                
                     
                
                 | 
				
                    G50N03JN30V,RD(MAX)<7M@10V,RD(MAX)<12M@  |  
                4905 | 0.65 | 
                
                    
                    ДобавитьНемедленный | 
                
                
                  
                    
                 
                     Datenblatt  | 
				 
                Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 65A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.5V @ 250µA | 16.6 nC @ 10 V | ±20V | 1255 pF @ 15 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                
                     
                
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                    BSO051N03MS GMOSFET N-CH 30V 14A 8DSO  |  
                2178 | 0.65 | 
                
                    
                    ДобавитьНемедленный | 
                
                
                  
                    
                
                     Datenblatt  | 
				 
                Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 5.1mOhm @ 18A, 10V | 2V @ 250µA | 55 nC @ 10 V | ±20V | 4300 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 
                
                     
                
                 | 
				
                    RQA0008RXDQS#H1RQA0008 - N-CHANNEL POWER MOSFET  |  
                40000 | 0.55 | 
                
                    
                    ДобавитьНемедленный | 
                
                   Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16 V | 2.4A (Ta) | - | - | 800mV @ 1mA | - | ±5V | 44 pF @ 0 V | - | 10W (Tc) | 150°C | Surface Mount | |
                
                     
                
                 | 
				
                    G45P02D3P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<  |  
                4908 | 0.66 | 
                
                    
                    ДобавитьНемедленный | 
                
                
                  
                    
                 
                     Datenblatt  | 
				 
                Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 45A | - | 9.5mOhm @ 10A, 4.5V | 1V @ 250µA | 55 nC @ 4.5 V | ±12V | 3500 pF @ 10 V | - | 80W | -55°C ~ 150°C (TJ) | Surface Mount | 
                
                     
                
                 | 
				
                    PJD35N06A_L2_0000160V N-CHANNEL ENHANCEMENT MODE M  |  
                2830 | 0.66 | 
                
                    
                    ДобавитьНемедленный | 
                
                   Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 4.7A (Ta), 35A (Tc) | 4.5V, 10V | 21mOhm @ 20A, 10V | 2.5V @ 250µA | 28 nC @ 10 V | ±20V | 1680 pF @ 20 V | - | 1.1W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
                
                     
                
                 | 
				
                    PJL9436A_R2_0000160V N-CHANNEL ENHANCEMENT MODE M  |  
                2490 | 0.66 | 
                
                    
                    ДобавитьНемедленный | 
                
                   Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.5A (Ta) | 4.5V, 10V | 21mOhm @ 7.5A, 10V | 2.5V @ 250µA | 28 nC @ 10 V | ±20V | 1680 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
                
                     
                
                 | 
				
                    IRF7326D2TRPBFMOSFET P-CH 30V 3.6A 8SO  |  
                2125 | 0.66 | 
                
                    
                    ДобавитьНемедленный | 
                
                
                  
                    
                
                     Datenblatt  | 
				 
                Tape & Reel (TR),Cut Tape (CT) | FETKY™ | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.6A (Ta) | 4.5V, 10V | 100mOhm @ 1.8A, 10V | 1V @ 250µA | 25 nC @ 10 V | ±20V | 440 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |