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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PH7030ALS,115

PH7030ALS,115

MOSFET N-CH 30V TRENCH LFPACK

NXP USA Inc.

2674 0.00
- +

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Немедленный

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
PMV62XN,215

PMV62XN,215

MOSFET N-CH SOT-23

NXP USA Inc.

2531 0.00
- +

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Немедленный

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
BUK7514-60E,127

BUK7514-60E,127

MOSFET N-CH 60V 58A TO220AB

NXP USA Inc.

2635 1.00
- +

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Немедленный

BUK7514-60E,127

Datenblatt

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 58A (Tc) 10V 13mOhm @ 15A, 10V 4V @ 1mA 22.9 nC @ 10 V ±20V 1730 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK751R6-30E,127

BUK751R6-30E,127

MOSFET N-CH 30V 120A TO220AB

NXP USA Inc.

277 1.22
- +

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Немедленный

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 1.6mOhm @ 25A, 10V 4V @ 1mA 154 nC @ 10 V ±20V 11960 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK752R7-60E,127

BUK752R7-60E,127

MOSFET N-CH 60V 120A TO220AB

NXP USA Inc.

1053 1.20
- +

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Немедленный

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 158 nC @ 10 V ±20V 11180 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK753R5-60E,127

BUK753R5-60E,127

MOSFET N-CH 60V 120A TO220AB

NXP USA Inc.

3581 0.00
- +

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Немедленный

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.5mOhm @ 25A, 10V 4V @ 1mA 114 nC @ 10 V ±20V 8920 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK754R7-60E,127

BUK754R7-60E,127

MOSFET N-CH 60V 100A TO220AB

NXP USA Inc.

1957 0.72
- +

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Немедленный

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 4.6mOhm @ 25A, 10V 4V @ 1mA 82 nC @ 10 V ±20V 6230 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7E1R6-30E,127

BUK7E1R6-30E,127

MOSFET N-CH 30V 120A I2PAK

NXP USA Inc.

295 1.22
- +

Добавить

Немедленный

BUK7E1R6-30E,127

Datenblatt

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 1.6mOhm @ 25A, 10V 4V @ 1mA 154 nC @ 10 V ±20V 11960 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK952R3-40E,127

BUK952R3-40E,127

MOSFET N-CH 40V 120A TO220AB

NXP USA Inc.

2001 1.00
- +

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Немедленный

BUK952R3-40E,127

Datenblatt

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V, 10V 2.2mOhm @ 25A, 10V 2.1V @ 1mA 87.8 nC @ 5 V ±10V 13160 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK952R8-60E,127

BUK952R8-60E,127

MOSFET N-CH 60V 120A TO220AB

NXP USA Inc.

411 1.20
- +

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Немедленный

BUK952R8-60E,127

Datenblatt

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 5V, 10V 2.6mOhm @ 25A, 10V 2.1V @ 1mA 120 nC @ 5 V ±10V 17450 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK953R2-40E,127

BUK953R2-40E,127

MOSFET N-CH 40V 100A TO220AB

NXP USA Inc.

3261 0.00
- +

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Немедленный

BUK953R2-40E,127

Datenblatt

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 5V, 10V 2.8mOhm @ 25A, 10V 2.1V @ 1mA 69.5 nC @ 5 V ±10V 9150 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK954R4-80E,127

BUK954R4-80E,127

MOSFET N-CH 80V 120A TO220AB

NXP USA Inc.

478 1.25
- +

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Немедленный

BUK954R4-80E,127

Datenblatt

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 5V, 10V 4.2mOhm @ 25A, 10V 2.1V @ 1mA 123 nC @ 5 V ±10V 17130 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E2R3-40E,127

BUK9E2R3-40E,127

MOSFET N-CH 40V 120A I2PAK

NXP USA Inc.

2303 0.00
- +

Добавить

Немедленный

BUK9E2R3-40E,127

Datenblatt

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V, 10V 2.2mOhm @ 25A, 10V 2.1V @ 1mA 87.8 nC @ 5 V ±10V 13160 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E2R8-60E,127

BUK9E2R8-60E,127

MOSFET N-CH 60V 120A I2PAK

NXP USA Inc.

288 1.20
- +

Добавить

Немедленный

BUK9E2R8-60E,127

Datenblatt

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 5V, 10V 2.6mOhm @ 25A, 10V 2.1V @ 1mA 120 nC @ 5 V ±10V 17450 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E3R2-40E,127

BUK9E3R2-40E,127

MOSFET N-CH 40V 100A I2PAK

NXP USA Inc.

3731 0.00
- +

Добавить

Немедленный

BUK9E3R2-40E,127

Datenblatt

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 5V, 10V 2.8mOhm @ 25A, 10V 2.1V @ 1mA 69.5 nC @ 5 V ±10V 9150 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E3R7-60E,127

BUK9E3R7-60E,127

MOSFET N-CH 60V 120A I2PAK

NXP USA Inc.

3745 0.00
- +

Добавить

Немедленный

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 5V, 10V 3.4mOhm @ 25A, 10V 2.1V @ 1mA 95 nC @ 5 V ±10V 13490 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E4R4-80E,127

BUK9E4R4-80E,127

MOSFET N-CH 80V 120A I2PAK

NXP USA Inc.

295 1.25
- +

Добавить

Немедленный

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 5V, 10V 4.2mOhm @ 25A, 10V 2.1V @ 1mA 123 nC @ 5 V ±10V 17130 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E4R9-60E,127

BUK9E4R9-60E,127

MOSFET N-CH 60V 100A I2PAK

NXP USA Inc.

3533 0.00
- +

Добавить

Немедленный

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 5V, 10V 4.5mOhm @ 25A, 10V 2.1V @ 1mA 65 nC @ 5 V ±10V 9710 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E6R1-100E,127

BUK9E6R1-100E,127

MOSFET N-CH 100V 120A I2PAK

NXP USA Inc.

285 1.25
- +

Добавить

Немедленный

BUK9E6R1-100E,127

Datenblatt

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 5V, 10V 5.9mOhm @ 25A, 10V 2.1V @ 1mA 133 nC @ 5 V ±10V 17460 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E8R5-40E,127

BUK9E8R5-40E,127

MOSFET N-CH 40V 75A I2PAK

NXP USA Inc.

2432 1.00
- +

Добавить

Немедленный

BUK9E8R5-40E,127

Datenblatt

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 5V, 10V 6.6mOhm @ 20A, 10V 2.1V @ 1mA 20.9 nC @ 5 V ±10V 2600 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) Through Hole
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