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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UJ4C075033K3S

UJ4C075033K3S

750V/33MOHM, SIC, CASCODE, G4, T

UnitedSiC

1272 11.39
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UJ4C075033K3S

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 47A (Tc) 12V 41mOhm @ 30A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 242W (Tc) -55°C ~ 175°C (TJ) Through Hole
C3M0120090D

C3M0120090D

SICFET N-CH 900V 23A TO247-3

Wolfspeed, Inc.

3492 11.47
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C3M0120090D

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Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 23A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 17.3 nC @ 15 V +18V, -8V 414 pF @ 600 V - 97W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT24P20

IXTT24P20

MOSFET P-CH 200V 24A TO268

IXYS

267 11.60
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IXTT24P20

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 110mOhm @ 500mA, 10V 5V @ 250µA 150 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXKH35N60C5

IXKH35N60C5

MOSFET N-CH 600V 35A TO247AD

IXYS

3325 11.62
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IXKH35N60C5

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 100mOhm @ 18A, 10V 3.9V @ 1.2mA 70 nC @ 10 V ±20V 2800 pF @ 100 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
2SK2595AXTB-E

2SK2595AXTB-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

13000 8.39
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2SK2595AXTB-E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
TW140N120C,S1F

TW140N120C,S1F

G3 1200V SIC-MOSFET TO-247 140M

Toshiba Semiconductor and Storage

105 11.91
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TW140N120C,S1F

Datenblatt

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 20A (Tc) 18V 182mOhm @ 10A, 18V 5V @ 1mA 24 nC @ 18 V +25V, -10V 691 pF @ 800 V - 107W (Tc) 175°C Through Hole
NTE2376

NTE2376

MOSFET N-CHANNEL 200V 30A TO247

NTE Electronics, Inc

1844 12.02
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NTE2376

Datenblatt

Bag - Active N-Channel MOSFET (Metal Oxide) 200 V 30A (Tc) 10V 85mOhm @ 18A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2800 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
UJ4C075044K3S

UJ4C075044K3S

750V/44MOHM, SIC, CASCODE, G4, T

UnitedSiC

264 12.17
- +

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UJ4C075044K3S

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 37.4A (Tc) 12V 56mOhm @ 25A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 203W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFT60N60X3HV

IXFT60N60X3HV

MOSFET ULTRA 600V 60A TO268HV

IXYS

318 12.23
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IXFT60N60X3HV

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 51mOhm @ 30A, 10V 5V @ 4mA 51 nC @ 10 V ±20V 3450 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH54N65X3

IXFH54N65X3

MOSFET 54A 650V X3 TO247

IXYS

480 12.36
- +

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IXFH54N65X3

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 59mOhm @ 27A, 10V 5.2V @ 4mA 49 nC @ 10 V ±20V 3360 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTHL060N065SC1

NTHL060N065SC1

SIC MOS TO247-3L 650V

onsemi

450 12.50
- +

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NTHL060N065SC1

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 47A (Tc) 15V, 18V 70mOhm @ 20A, 18V 4.3V @ 6.5mA 74 nC @ 18 V +22V, -8V 1473 pF @ 325 V - 176W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFA72N20X3

IXFA72N20X3

MOSFET N-CH 200V 72A TO263AA

IXYS

148 8.67
- +

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IXFA72N20X3

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 20mOhm @ 36A, 10V 4.5V @ 1.5mA 55 nC @ 10 V ±20V 3780 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STW56N65DM2

STW56N65DM2

MOSFET N-CH 650V 48A TO247

STMicroelectronics

570 12.57
- +

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STW56N65DM2

Datenblatt

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 48A (Tc) 10V 65mOhm @ 24A, 10V 5V @ 250µA 88 nC @ 10 V ±25V 4100 pF @ 100 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTH4L060N090SC1

NTH4L060N090SC1

SILICON CARBIDE MOSFET, NCHANNEL

onsemi

285 12.61
- +

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NTH4L060N090SC1

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 900 V 46A (Tc) 15V, 18V 43mOhm @ 20A, 18V 4.3V @ 5mA 87 nC @ 15 V +22V, -8V 1770 pF @ 450 V - 221W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMW65R083M1HXKSA1

IMW65R083M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies

162 12.65
- +

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IMW65R083M1HXKSA1

Datenblatt

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 24A (Tc) 18V 111mOhm @ 11.2A, 18V 5.7V @ 3.3mA 19 nC @ 18 V +20V, -2V 624 pF @ 400 V - 104W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTT10P60

IXTT10P60

MOSFET P-CH 600V 10A TO268

IXYS

240 12.70
- +

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Немедленный

IXTT10P60

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 1Ohm @ 5A, 10V 5V @ 250µA 160 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UJ4C075044K4S

UJ4C075044K4S

750V/44MOHM, SIC, CASCODE, G4, T

UnitedSiC

515 12.71
- +

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Немедленный

UJ4C075044K4S

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 37.4A (Tc) 12V 56mOhm @ 25A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 203W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH60N20X4

IXTH60N20X4

MOSFET ULTRA X4 200V 60A TO-247

IXYS

497 12.76
- +

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Немедленный

IXTH60N20X4

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 21mOhm @ 30A, 10V 4.5V @ 250µA 33 nC @ 10 V ±20V 2450 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH60N65X2-4

IXFH60N65X2-4

MOSFET N-CH 650V 60A TO247-4L

IXYS

277 12.86
- +

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Немедленный

IXFH60N65X2-4

Datenblatt

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 60A (Tc) 10V 52mOhm @ 30A, 10V 5V @ 4mA 108 nC @ 10 V ±30V 6300 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVH4L060N090SC1

NVH4L060N090SC1

-

onsemi

450 13.09
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Немедленный

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