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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AOC3844

AOC3844

MOSFET N-CH 6-DFN

Alpha & Omega Semiconductor Inc.

3782 0.00
- +

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Немедленный

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
AOTF8N50L_004

AOTF8N50L_004

MOSFET N-CH 500V TO-220F

Alpha & Omega Semiconductor Inc.

3717 0.00
- +

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Немедленный

Bulk - Obsolete - - - - - - - - - - - - - -
CDM2208-800FP

CDM2208-800FP

MOSFET N-CH 800V 8A TO220

Central Semiconductor Corp

3240 0.00
- +

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Немедленный

CDM2208-800FP

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.6Ohm @ 4A, 10V 4V @ 250µA 24.45 nC @ 10 V 30V 1110 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Through Hole
CDM2206-800LR

CDM2206-800LR

MOSFET N-CH 800V 6A TO220

Central Semiconductor Corp

3051 0.00
- +

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Немедленный

CDM2206-800LR

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 3A, 10V 4V @ 250µA 24.3 nC @ 10 V 30V 474.7 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTNS3C94NZT5G

NTNS3C94NZT5G

MOSFET N-CHANNEL 12V 384MA

onsemi

3533 0.00
- +

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Немедленный

NTNS3C94NZT5G

Datenblatt

Tape & Reel (TR),Bulk - Active N-Channel MOSFET (Metal Oxide) 12 V 384mA (Ta) 1.5V, 4.5V 480mOhm @ 100mA, 4.5V 1V @ 250µA 0.6 nC @ 4.5 V ±8V 35 pF @ 9.6 V - 120mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDWS86381-F085

FDWS86381-F085

MOSFET N-CH 80V 30A POWER56

onsemi

2512 0.00
- +

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Немедленный

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
AOD2NL60

AOD2NL60

MOSFET N-CH 600V 2A TO252

Alpha & Omega Semiconductor Inc.

3961 0.00
- +

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Немедленный

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
AOD2NL60_001

AOD2NL60_001

MOSFET N-CH 600V 2A TO252

Alpha & Omega Semiconductor Inc.

2269 0.00
- +

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Немедленный

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
SIHFPS43N50K-GE3

SIHFPS43N50K-GE3

MOSFET N-CH 500V SUPER-247

Vishay Siliconix

3462 0.00
- +

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Немедленный

SIHFPS43N50K-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) 10V 90mOhm @ 28A, 10V 5V @ 250µA 350 nC @ 10 V ±30V 8310 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF7N60FD_001

AOTF7N60FD_001

MOSFET N-CH 600V 7A TO220

Alpha & Omega Semiconductor Inc.

2505 0.00
- +

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Немедленный

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 1.2Ohm @ 3.5A, 10V 4.5V @ 250µA 28 nC @ 10 V ±30V 1035 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
CP375-CWDM3011N-WN

CP375-CWDM3011N-WN

MOSFET N-CH 11A 30V BARE DIE

Central Semiconductor Corp

2137 0.00
- +

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Немедленный

CP375-CWDM3011N-WN

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 20mOhm @ 11A, 10V 3V @ 250µA 6.3 nC @ 5 V ±20V 860 pF @ 15 V - 2.5W -55°C ~ 150°C (TJ) Surface Mount
CP375-CWDM3011N-CT

CP375-CWDM3011N-CT

MOSFET N-CH 11A 30V BARE DIE

Central Semiconductor Corp

3172 0.00
- +

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Немедленный

CP375-CWDM3011N-CT

Datenblatt

Tray - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 20mOhm @ 11A, 10V 3V @ 250µA 6.3 nC @ 5 V ±20V 860 pF @ 15 V - 2.5W -55°C ~ 150°C (TJ) Surface Mount
CP406-CWDM3011N-CT

CP406-CWDM3011N-CT

MOSFET N-CH 11A 30V BARE DIE

Central Semiconductor Corp

3447 0.00
- +

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Немедленный

CP406-CWDM3011N-CT

Datenblatt

Tray - Active N-Channel MOSFET (Metal Oxide) 30 V 9.93A (Ta) 4.5V, 10V 13mOhm @ 1A, 10V 3V @ 250µA - ±20V - - 1.15W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IXFT78N60X3HV

IXFT78N60X3HV

MOSFET ULTRA 600V 78A TO268HV

IXYS

3719 0.00
- +

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Немедленный

IXFT78N60X3HV

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 78A (Tc) 10V 38mOhm @ 39A, 10V 5V @ 4mA 70 nC @ 10 V ±20V 4700 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IGLD60R190D1AUMA1

IGLD60R190D1AUMA1

MOSFET N-CH 600V 10A LSON-8

Infineon Technologies

2253 0.00
- +

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Немедленный

IGLD60R190D1AUMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolGaN™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) - - 1.6V @ 960µA - -10V 157 pF @ 400 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUXNSF2804STRL7P

AUXNSF2804STRL7P

MOSFET N-CH

Infineon Technologies

2109 0.00
- +

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Немедленный

Bulk - Obsolete - - - - - - - - - - - - - -
TK430A60F,S4X(S

TK430A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage

3785 0.00
- +

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Немедленный

TK430A60F,S4X(S

Datenblatt

Bulk U-MOSIX Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Ta) 10V 430mOhm @ 6.5A, 10V 4V @ 1.75mA 48 nC @ 10 V ±30V 1940 pF @ 300 V - 45W (Tc) 150°C Through Hole
TK370A60F,S4X(S

TK370A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage

2600 0.00
- +

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Немедленный

TK370A60F,S4X(S

Datenblatt

Bulk U-MOSIX Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 370mOhm @ 7.5A, 10V 4V @ 2.04mA 55 nC @ 10 V ±30V 2200 pF @ 300 V - 45W (Tc) 150°C Through Hole
CP406-CWDM3011N-WN

CP406-CWDM3011N-WN

MOSFET N-CH 11A 30V BARE DIE

Central Semiconductor Corp

3643 0.00
- +

Добавить

Немедленный

CP406-CWDM3011N-WN

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 9.93A (Ta) 4.5V, 10V 13mOhm @ 1A, 10V 3V @ 250µA - ±20V - - 1.15W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AOTF190A60L_001

AOTF190A60L_001

MOSFET N-CH 600V 20A TO220

Alpha & Omega Semiconductor Inc.

2416 0.00
- +

Добавить

Немедленный

Tube - Obsolete - - - - - - - - - - - - - -
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