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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFN55N50F

IXFN55N50F

MOSFET N-CH 500V 55A SOT227B

IXYS

2397 0.00
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IXFN55N50F

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Tube HiPerFET™, F Class Active N-Channel MOSFET (Metal Oxide) 500 V 55A (Tc) 10V 85mOhm @ 27.5A, 10V 5.5V @ 8mA 195 nC @ 10 V ±20V 6700 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFT12N100F

IXFT12N100F

MOSFET N-CH 1000V 12A TO268

IXYS

2635 0.00
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IXFT12N100F

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Tube HiPerRF™ Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 10V 1.05Ohm @ 6A, 10V 5.5V @ 4mA 77 nC @ 10 V ±20V 2700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT6N100F

IXFT6N100F

MOSFET N-CH 1000V 6A TO268

IXYS

3982 0.00
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IXFT6N100F

Datenblatt

Tube HiPerRF™ Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tc) 10V 1.9Ohm @ 3A, 10V 5.5V @ 2.5mA 54 nC @ 10 V ±20V 1770 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX24N100F

IXFX24N100F

MOSFET N-CH 1000V 24A PLUS247-3

IXYS

2007 0.00
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IXFX24N100F

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Tube HiPerRF™ Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 24A (Tc) 10V 390mOhm @ 12A, 10V 5.5V @ 8mA 195 nC @ 10 V ±20V 6600 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT1001R1BN

APT1001R1BN

MOSFET N-CH 1000V 10.5A TO247AD

Microchip Technology

2090 0.00
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APT1001R1BN

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Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 10.5A (Tc) 10V 1.1Ohm @ 5.25A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT1001RBN

APT1001RBN

MOSFET N-CH 1000V 11A TO247AD

Microchip Technology

2429 0.00
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APT1001RBN

Datenblatt

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 11A (Tc) 10V 1Ohm @ 5.5A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT1002RBNG

APT1002RBNG

MOSFET N-CH 1000V 8A TO247AD

Microsemi Corporation

3874 0.00
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Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 8A (Tc) 10V 1.6Ohm @ 4A, 10V 4V @ 1mA 105 nC @ 10 V ±30V 1800 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT4065BNG

APT4065BNG

MOSFET N-CH 400V 11A TO247AD

Microsemi Corporation

2084 0.00
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Немедленный

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 11A (Tc) 10V 650mOhm @ 5.5A, 10V 4V @ 1mA 55 nC @ 10 V ±30V 950 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT40M42JN

APT40M42JN

MOSFET N-CH 400V 86A ISOTOP

Microsemi Corporation

2796 0.00
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APT40M42JN

Datenblatt

Tray POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 86A (Tc) 10V 42mOhm @ 43A, 10V 4V @ 5mA 760 nC @ 10 V ±30V 14000 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT40M75JN

APT40M75JN

MOSFET N-CH 400V 56A ISOTOP

Microsemi Corporation

3727 0.00
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APT40M75JN

Datenblatt

Tray POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 56A (Tc) 10V 75mOhm @ 28A, 10V 4V @ 2.5mA 370 nC @ 10 V ±30V 6800 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT5012JN

APT5012JN

MOSFET N-CH 500V 43A ISOTOP

Microsemi Corporation

2250 0.00
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Немедленный

APT5012JN

Datenblatt

Tray POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 43A (Tc) 10V 120mOhm @ 21.5A, 10V 4V @ 2.5mA 370 nC @ 10 V ±30V 6500 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT5020BN

APT5020BN

MOSFET N-CH 500V 28A TO247AD

Microchip Technology

2066 0.00
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Немедленный

APT5020BN

Datenblatt

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 28A (Tc) 10V 200mOhm @ 14A, 10V 4V @ 1mA 210 nC @ 10 V ±30V 3500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5020BNFR

APT5020BNFR

MOSFET N-CH 500V 28A TO247AD

Microchip Technology

3582 0.00
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Немедленный

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 28A (Tc) 10V 200mOhm @ 14A, 10V 4V @ 1mA 210 nC @ 10 V ±30V 3500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5022BNG

APT5022BNG

MOSFET N-CH 500V 27A TO247AD

Microsemi Corporation

3711 0.00
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Немедленный

APT5022BNG

Datenblatt

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 27A (Tc) 10V 220mOhm @ 13.5A, 10V 4V @ 1mA 210 nC @ 10 V ±30V 3500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5025BN

APT5025BN

MOSFET N-CH 500V 23A TO247AD

Microsemi Corporation

3810 0.00
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Немедленный

APT5025BN

Datenblatt

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 23A (Tc) 10V 250mOhm @ 11.5A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6030BN

APT6030BN

MOSFET N-CH 600V 23A TO247AD

Microsemi Corporation

3917 0.00
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Немедленный

APT6030BN

Datenblatt

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 300mOhm @ 11.5A, 10V 4V @ 1mA 210 nC @ 10 V ±30V 3500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6040BN

APT6040BN

MOSFET N-CH 600V 18A TO247AD

Microsemi Corporation

2153 0.00
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Немедленный

APT6040BN

Datenblatt

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 400mOhm @ 9A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6040BNG

APT6040BNG

MOSFET N-CH 600V 18A TO247AD

Microsemi Corporation

3017 0.00
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Немедленный

APT6040BNG

Datenblatt

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 400mOhm @ 9A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8018JN

APT8018JN

MOSFET N-CH 800V 40A ISOTOP

Microsemi Corporation

2625 0.00
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Немедленный

APT8018JN

Datenblatt

Tray POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 40A (Tc) 10V 180mOhm @ 20A, 10V 4V @ 5mA 700 nC @ 10 V ±30V 14000 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT8075BN

APT8075BN

MOSFET N-CH 800V 13A TO247AD

Microsemi Corporation

2076 0.00
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Немедленный

APT8075BN

Datenblatt

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 750mOhm @ 6.5A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
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