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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STU13N65M2

STU13N65M2

MOSFET N-CH 650V 10A IPAK

STMicroelectronics

3071 0.00
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STU13N65M2

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Tube MDmesh™ M2 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 430mOhm @ 5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 590 pF @ 100 V - 110W (Tc) 150°C (TJ) Through Hole
ES6U2T2R

ES6U2T2R

MOSFET N-CH 20V 1.5A 6WEMT

Rohm Semiconductor

2607 0.00
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ES6U2T2R

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Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 1.5V, 4.5V 180mOhm @ 1.5A, 4.5V 1V @ 1mA 1.8 nC @ 4.5 V ±10V 110 pF @ 10 V Schottky Diode (Isolated) 700mW (Ta) 150°C (TJ) Surface Mount
ES6U41T2R

ES6U41T2R

MOSFET N-CH 30V 1.5A 6WEMT

Rohm Semiconductor

3823 0.00
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ES6U41T2R

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta) 2.5V, 4.5V 240mOhm @ 1.5A, 4.5V 1.5V @ 1mA 2.2 nC @ 4.5 V ±12V 80 pF @ 10 V Schottky Diode (Isolated) 700mW (Ta) 150°C (TJ) Surface Mount
FDMS86368-F085

FDMS86368-F085

MOSFET N-CH 80V 80A POWER56

onsemi

3296 1.00
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FDMS86368-F085

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 10V 4.5mOhm @ 80A, 10V 4V @ 250µA 75 nC @ 10 V ±20V 4350 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS86369-F085

FDMS86369-F085

MOSFET N-CH 80V 65A POWER56

onsemi

3008 0.00
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FDMS86369-F085

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 65A (Tc) 10V 7.5mOhm @ 65A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 2470 pF @ 40 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA80R1K0CEXKSA1

IPA80R1K0CEXKSA1

MOSFET N-CH 800V 3.6A TO220

Infineon Technologies

3152 0.00
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IPA80R1K0CEXKSA1

Datenblatt

Tube,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 3.6A (Tc) 10V 950mOhm @ 3.6A, 10V 3.9V @ 250µA 31 nC @ 10 V ±20V 785 pF @ 100 V - 32W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA80R310CEXKSA1

IPA80R310CEXKSA1

MOSFET N-CH 800V 6.8A TO220

Infineon Technologies

2738 1.00
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IPA80R310CEXKSA1

Datenblatt

Tube,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 6.8A (Tc) - 310mOhm @ 11A, 10V 3.9V @ 1mA 91 nC @ 10 V - 2320 pF @ 100 V - 35W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPS65R1K5CEAKMA1

IPS65R1K5CEAKMA1

MOSFET N-CH 650V 3.1A TO251

Infineon Technologies

2233 1.00
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Немедленный

IPS65R1K5CEAKMA1

Datenblatt

Tube,Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.1A (Tc) 10V 1.5Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPD60R2K1CEBTMA1

IPD60R2K1CEBTMA1

MOSFET N-CH 600V 2.3A TO252-3

Infineon Technologies

2951 0.00
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Немедленный

IPD60R2K1CEBTMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.3A (Tc) 10V 2.1Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 22W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPA50R650CEXKSA2

IPA50R650CEXKSA2

MOSFET N-CH 500V 4.6A TO220

Infineon Technologies

48571 0.29
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Немедленный

IPA50R650CEXKSA2

Datenblatt

Bulk,Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.6A (Tc) 13V 650mOhm @ 1.8A, 13V 3.5V @ 150µA 15 nC @ 10 V ±20V 342 pF @ 100 V - 27.2W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA60R460CEXKSA1

IPA60R460CEXKSA1

MOSFET N-CH 600V 9.1A TO220-FP

Infineon Technologies

2054 0.00
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Немедленный

IPA60R460CEXKSA1

Datenblatt

Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.1A (Tc) 10V 460mOhm @ 3.4A, 10V 3.5V @ 280µA 28 nC @ 10 V ±20V 620 pF @ 100 V - 30W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA60R800CEXKSA1

IPA60R800CEXKSA1

MOSFET N-CH 600V 5.6A TO220-FP

Infineon Technologies

3418 1.00
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Немедленный

IPA60R800CEXKSA1

Datenblatt

Tube,Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.6A (Tc) 10V 800mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 27W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA80R1K4CEXKSA1

IPA80R1K4CEXKSA1

MOSFET N-CH 800V 2.8A TO220

Infineon Technologies

734 0.49
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Немедленный

IPA80R1K4CEXKSA1

Datenblatt

Tube,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 2.8A (Tc) 10V 1.4Ohm @ 2.3A, 10V 3.9V @ 240µA 23 nC @ 10 V ±20V 570 pF @ 100 V - 31W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA80R460CEXKSA1

IPA80R460CEXKSA1

MOSFET N-CH 800V 5A TO220

Infineon Technologies

2929 1.00
- +

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Немедленный

IPA80R460CEXKSA1

Datenblatt

Tube,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 460mOhm @ 7.1A, 10V 3.9V @ 680µA 64 nC @ 10 V ±20V 1600 pF @ 100 V - 34W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA80R650CEXKSA1

IPA80R650CEXKSA1

MOSFET N-CH 800V 4.5A TO220

Infineon Technologies

2391 0.00
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Немедленный

IPA80R650CEXKSA1

Datenblatt

Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 650mOhm @ 5.1A, 10V 3.9V @ 470µA 45 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPS65R1K0CEAKMA1

IPS65R1K0CEAKMA1

MOSFET N-CH 650V 4.3A TO251

Infineon Technologies

1878 0.24
- +

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Немедленный

IPS65R1K0CEAKMA1

Datenblatt

Tube,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 4.3A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 200µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V - 37W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPU60R1K0CEBKMA1

IPU60R1K0CEBKMA1

MOSFET N-CH 600V 4.3A TO251

Infineon Technologies

3168 1.00
- +

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Немедленный

IPU60R1K0CEBKMA1

Datenblatt

Tube,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 4.3A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPU60R1K5CEBKMA1

IPU60R1K5CEBKMA1

MOSFET N-CH 600V 3.1A TO251

Infineon Technologies

2666 1.00
- +

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Немедленный

IPU60R1K5CEBKMA1

Datenblatt

Tube,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 3.1A (Tc) 10V 1.5Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPU60R2K1CEBKMA1

IPU60R2K1CEBKMA1

MOSFET N-CH 600V 2.3A TO251-3

Infineon Technologies

460586 0.15
- +

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Немедленный

IPU60R2K1CEBKMA1

Datenblatt

Tube,Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.3A (Tc) 10V 2.1Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 22W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPD60R1K0CEATMA1

IPD60R1K0CEATMA1

MOSFET N-CH 600V 4.3A TO252-3

Infineon Technologies

3826 1.00
- +

Добавить

Немедленный

IPD60R1K0CEATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.3A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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