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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTD4805N-35G

NTD4805N-35G

MOSFET N-CH 30V 12.7A/95A IPAK

onsemi

3630 0.29
- +

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Немедленный

NTD4805N-35G

Datenblatt

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.7A (Ta), 95A (Tc) 4.5V, 11.5V 5mOhm @ 30A, 10V 2.5V @ 250µA 48 nC @ 11.5 V ±20V 2865 pF @ 12 V - 1.41W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4806N-1G

NTD4806N-1G

MOSFET N-CH 30V 11.3A/79A IPAK

onsemi

2834 0.00
- +

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Немедленный

NTD4806N-1G

Datenblatt

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.3A (Ta), 79A (Tc) 4.5V, 11.5V 6mOhm @ 30A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2142 pF @ 12 V - 1.4W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4806N-35G

NTD4806N-35G

MOSFET N-CH 30V 11.3A/79A IPAK

onsemi

46050 0.25
- +

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Немедленный

NTD4806N-35G

Datenblatt

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.3A (Ta), 79A (Tc) 4.5V, 11.5V 6mOhm @ 30A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2142 pF @ 12 V - 1.4W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4806NA-1G

NTD4806NA-1G

MOSFET N-CH 30V 11.3A/79A IPAK

onsemi

10350 0.10
- +

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Немедленный

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.3A (Ta), 79A (Tc) - 6mOhm @ 30A, 10V 2.5V @ 250µA 23 nC @ 4.5 V - 2142 pF @ 12 V - - - Through Hole
NTD4806NA-35G

NTD4806NA-35G

MOSFET N-CH 30V 11.3A/79A IPAK

onsemi

2989 0.00
- +

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Немедленный

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.3A (Ta), 79A (Tc) - 6mOhm @ 30A, 10V 2.5V @ 250µA 23 nC @ 4.5 V - 2142 pF @ 12 V - - - Through Hole
NTD4806NAT4G

NTD4806NAT4G

MOSFET N-CH 30V 11.3A/79A DPAK

onsemi

7500 0.23
- +

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Немедленный

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.3A (Ta), 79A (Tc) - 6mOhm @ 30A, 10V 2.5V @ 250µA 23 nC @ 4.5 V - 2142 pF @ 12 V - - - Surface Mount
NTD4808N-1G

NTD4808N-1G

MOSFET N-CH 30V 10A/63A IPAK

onsemi

2443 0.00
- +

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Немедленный

NTD4808N-1G

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 63A (Tc) 4.5V, 11.5V 8mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1538 pF @ 12 V - 1.4W (Ta), 54.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4808N-35G

NTD4808N-35G

MOSFET N-CH 30V 10A/63A IPAK

onsemi

7105 0.10
- +

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Немедленный

NTD4808N-35G

Datenblatt

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 63A (Tc) 4.5V, 11.5V 8mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1538 pF @ 12 V - 1.4W (Ta), 54.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4808NT4G

NTD4808NT4G

MOSFET N-CH 30V 10A/63A DPAK

onsemi

22486 0.20
- +

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Немедленный

NTD4808NT4G

Datenblatt

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 63A (Tc) 4.5V, 11.5V 8mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1538 pF @ 12 V - 1.4W (Ta), 54.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4809N-1G

NTD4809N-1G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi

6748 0.09
- +

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Немедленный

NTD4809N-1G

Datenblatt

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.4W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809N-35G

NTD4809N-35G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi

62400 0.20
- +

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Немедленный

NTD4809N-35G

Datenblatt

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.4W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809NA-1G

NTD4809NA-1G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi

86000 0.09
- +

Добавить

Немедленный

NTD4809NA-1G

Datenblatt

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809NA-35G

NTD4809NA-35G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi

2840 0.19
- +

Добавить

Немедленный

NTD4809NA-35G

Datenblatt

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809NAT4G

NTD4809NAT4G

MOSFET N-CH 30V 9.6A/58A DPAK

onsemi

193200 0.20
- +

Добавить

Немедленный

NTD4809NAT4G

Datenblatt

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4809NH-1G

NTD4809NH-1G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi

3624 0.18
- +

Добавить

Немедленный

NTD4809NH-1G

Datenblatt

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 15 nC @ 4.5 V ±20V 2155 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809NH-35G

NTD4809NH-35G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi

58847 0.18
- +

Добавить

Немедленный

NTD4809NH-35G

Datenblatt

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 15 nC @ 4.5 V ±20V 2155 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4810NH-1G

NTD4810NH-1G

MOSFET N-CH 30V 9A/54A IPAK

onsemi

3665 0.14
- +

Добавить

Немедленный

NTD4810NH-1G

Datenblatt

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 54A (Tc) 4.5V, 11.5V 10mOhm @ 30A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 1225 pF @ 12 V - 1.28W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4810NH-35G

NTD4810NH-35G

MOSFET N-CH 30V 9A/54A IPAK

onsemi

3250 0.00
- +

Добавить

Немедленный

NTD4810NH-35G

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 54A (Tc) 4.5V, 11.5V 10mOhm @ 30A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 1225 pF @ 12 V - 1.28W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4810NHT4G

NTD4810NHT4G

MOSFET N-CH 30V 9A/54A DPAK

onsemi

5000 0.27
- +

Добавить

Немедленный

NTD4810NHT4G

Datenblatt

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 54A (Tc) 4.5V, 11.5V 10mOhm @ 30A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 1225 pF @ 12 V - 1.28W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4813N-1G

NTD4813N-1G

MOSFET N-CH 30V 7.6A/40A IPAK

onsemi

6645 0.17
- +

Добавить

Немедленный

NTD4813N-1G

Datenblatt

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.6A (Ta), 40A (Tc) 4.5V, 11.5V 13mOhm @ 30A, 10V 2.5V @ 250µA 7.9 nC @ 4.5 V ±20V 860 pF @ 12 V - 1.27W (Ta), 35.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
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