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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI25N06S3L-22

IPI25N06S3L-22

MOSFET N-CH 55V 25A TO262-3

Infineon Technologies

3054 0.00
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IPI25N06S3L-22

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Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 25A (Tc) 5V, 10V 21.6mOhm @ 17A, 10V 2.2V @ 20µA 47 nC @ 10 V ±16V 2260 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI45N06S3-16

IPI45N06S3-16

MOSFET N-CH 55V 45A TO262-3

Infineon Technologies

2991 0.00
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IPI45N06S3-16

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Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 45A (Tc) 10V 15.7mOhm @ 23A, 10V 4V @ 30µA 57 nC @ 10 V ±20V 2980 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S3-05

IPI80N06S3-05

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

952 0.67
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IPI80N06S3-05

Datenblatt

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.4mOhm @ 63A, 10V 4V @ 110µA 240 nC @ 10 V ±20V 10760 pF @ 25 V - 165W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S3-07

IPI80N06S3-07

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

3790 1.00
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IPI80N06S3-07

Datenblatt

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.8mOhm @ 51A, 10V 4V @ 80µA 170 nC @ 10 V ±20V 7768 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S3L-05

IPI80N06S3L-05

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

472 0.67
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Немедленный

IPI80N06S3L-05

Datenblatt

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 4.8mOhm @ 69A, 10V 2.2V @ 115µA 273 nC @ 10 V ±16V 13060 pF @ 25 V - 165W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S3L06XK

IPI80N06S3L06XK

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

3980 0.00
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Немедленный

IPI80N06S3L06XK

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 5.9mOhm @ 56A, 10V 2.2V @ 80µA 196 nC @ 10 V ±16V 9417 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S3L-08

IPI80N06S3L-08

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

780 0.44
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Немедленный

IPI80N06S3L-08

Datenblatt

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 7.9mOhm @ 43A, 10V 2.2V @ 55µA 134 nC @ 10 V ±16V 6475 pF @ 25 V - 105W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP03N03LB G

IPP03N03LB G

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies

2528 0.00
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Немедленный

IPP03N03LB G

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.1mOhm @ 55A, 10V 2V @ 100µA 59 nC @ 5 V ±20V 7624 pF @ 15 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP048N06L G

IPP048N06L G

MOSFET N-CH 60V 100A TO220-3

Infineon Technologies

2701 0.00
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Немедленный

IPP048N06L G

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 4.7mOhm @ 100A, 10V 2V @ 270µA 225 nC @ 10 V ±20V 7600 pF @ 30 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP04N03LB G

IPP04N03LB G

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies

3923 0.00
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Немедленный

IPP04N03LB G

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.8mOhm @ 55A, 10V 2V @ 70µA 40 nC @ 5 V ±20V 5203 pF @ 15 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP050N06N G

IPP050N06N G

MOSFET N-CH 60V 100A TO220-3

Infineon Technologies

3509 0.00
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Немедленный

IPP050N06N G

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 5mOhm @ 100A, 10V 4V @ 270µA 167 nC @ 10 V ±20V 6100 pF @ 30 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP054NE8NGHKSA2

IPP054NE8NGHKSA2

MOSFET N-CH 85V 100A TO220-3

Infineon Technologies

3779 0.00
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Немедленный

IPP054NE8NGHKSA2

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 100A (Tc) 10V 5.4mOhm @ 100A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 12100 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP05N03LB G

IPP05N03LB G

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies

2366 0.00
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Немедленный

IPP05N03LB G

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 5.3mOhm @ 60A, 10V 2V @ 40µA 25 nC @ 5 V ±20V 3209 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP065N06LGAKSA1

IPP065N06LGAKSA1

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies

2493 0.00
- +

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Немедленный

IPP065N06LGAKSA1

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 6.5mOhm @ 80A, 10V 2V @ 180µA 157 nC @ 10 V ±20V 5100 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP06CN10N G

IPP06CN10N G

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies

3368 0.00
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Немедленный

IPP06CN10N G

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 6.5mOhm @ 100A, 10V 4V @ 180µA 139 nC @ 10 V ±20V 9200 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP06CNE8N G

IPP06CNE8N G

MOSFET N-CH 85V 100A TO220-3

Infineon Technologies

3360 0.00
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Немедленный

IPP06CNE8N G

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 100A (Tc) 10V 6.5mOhm @ 100A, 10V 4V @ 180µA 138 nC @ 10 V ±20V 9240 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP070N06L G

IPP070N06L G

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies

2696 0.00
- +

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Немедленный

IPP070N06L G

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 7mOhm @ 80A, 10V 2V @ 150µA 126 nC @ 10 V ±20V 4300 pF @ 30 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP070N06N G

IPP070N06N G

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies

3401 0.00
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Немедленный

IPP070N06N G

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7mOhm @ 80A, 10V 4V @ 180µA 118 nC @ 10 V ±20V 4100 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP07N03LB G

IPP07N03LB G

MOSFET N-CH 30V 50A TO220-3

Infineon Technologies

2917 0.00
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Немедленный

IPP07N03LB G

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.6mOhm @ 50A, 10V 2V @ 40µA 25 nC @ 5 V ±20V 2782 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP080N06N G

IPP080N06N G

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies

2383 0.00
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Немедленный

IPP080N06N G

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 8mOhm @ 80A, 10V 4V @ 150µA 93 nC @ 10 V ±20V 3500 pF @ 30 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
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