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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RQ3E100BNTB1

RQ3E100BNTB1

NCH 30V 21A POWER MOSFET: RQ3E10

Rohm Semiconductor

3000 1.12
- +

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RQ3E100BNTB1

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 21A (Tc) 4.5V, 10V 10.4mOhm @ 10A, 10V 2.5V @ 1mA 22 nC @ 10 V ±20V 1100 pF @ 15 V - 2W (Ta), 15W (Tc) 150°C (TJ) Surface Mount
SI7119DN-T1-GE3

SI7119DN-T1-GE3

MOSFET P-CH 200V 3.8A PPAK1212-8

Vishay Siliconix

63622 1.05
- +

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SI7119DN-T1-GE3

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Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 200 V 3.8A (Tc) 6V, 10V 1.05Ohm @ 1A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 666 pF @ 50 V - 3.7W (Ta), 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI3499DV-T1-BE3

SI3499DV-T1-BE3

P-CHANNEL 1.5-V (G-S) MOSFET

Vishay Siliconix

2960 1.05
- +

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SI3499DV-T1-BE3

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Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 8 V 5.3A (Ta) 1.5V, 4.5V 23mOhm @ 7A, 4.5V 750mV @ 250µA 42 nC @ 4.5 V ±5V - - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RF4G100BGTCR

RF4G100BGTCR

NCH 40V 10A, HUML2020L8, POWER M

Rohm Semiconductor

3000 1.13
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RF4G100BGTCR

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 4.5V, 10V 14.2mOhm @ 10A, 10V 2.5V @ 1mA 10.6 nC @ 10 V ±20V 530 pF @ 20 V - 2W (Ta) 150°C (TJ) Surface Mount
RF4L070BGTCR

RF4L070BGTCR

NCH 60V 7A, HUML2020L8, POWER MO

Rohm Semiconductor

3000 1.13
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RF4L070BGTCR

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta) 4.5V, 10V 27mOhm @ 7A, 10V 2.5V @ 1mA 7.6 nC @ 10 V ±20V 460 pF @ 30 V - 2W (Ta) 150°C (TJ) Surface Mount
MCAC100N03Y-TP

MCAC100N03Y-TP

N-CHANNEL MOSFET, DFN5060

Micro Commercial Co

9980 1.17
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MCAC100N03Y-TP

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100A - 2.9mOhm @ 20A, 10V 2.5V @ 250µA 43 nC @ 10 V ±20V 2559 pF @ 15 V - 35W -55°C ~ 150°C (TJ) Surface Mount
SPU01N60C3

SPU01N60C3

N-CHANNEL POWER MOSFET

Infineon Technologies

147579 0.39
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SPU01N60C3

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 800mA (Tc) 10V 6Ohm @ 500mA, 10V 3.9V @ 250µA 5 nC @ 10 V ±20V 100 pF @ 25 V - 11W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFL014NTR

AUIRFL014NTR

AUTOMOTIVE POWER MOSFET

International Rectifier

19166 0.39
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AUIRFL014NTR

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 1.5A (Ta) 10V 160mOhm @ 1.9A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 190 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RQ7G080BGTCR

RQ7G080BGTCR

NCH 40V 8A, TSMT8, POWER MOSFET

Rohm Semiconductor

3000 1.15
- +

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RQ7G080BGTCR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 8A (Ta) 4.5V, 10V 16.5mOhm @ 8A, 10V 2.5V @ 1mA 10.6 nC @ 10 V ±20V 530 pF @ 20 V - 1.1W (Ta) 150°C (TJ) Surface Mount
BUZ73AHXKSA1

BUZ73AHXKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies

14765 0.39
- +

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BUZ73AHXKSA1

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
RQ7L055BGTCR

RQ7L055BGTCR

NCH 60V 5.5A, TSMT8, POWER MOSFE

Rohm Semiconductor

3000 1.15
- +

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RQ7L055BGTCR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 5.5A (Ta) 4.5V, 10V 29mOhm @ 5.5A, 10V 2.5V @ 1mA 7.6 nC @ 10 V ±20V 460 pF @ 30 V - 1.1W (Ta) 150°C (TJ) Surface Mount
RW4E045AJTCL1

RW4E045AJTCL1

NCH 30V 4.5A POWER MOSFET: RW4E0

Rohm Semiconductor

3000 1.15
- +

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Немедленный

RW4E045AJTCL1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta) 2.5V, 4.5V 40mOhm @ 4.5A, 4.5V 1.5V @ 1mA 4 nC @ 4.5 V ±12V 450 pF @ 15 V - 1.5W (Ta) 150°C (TJ) Surface Mount
IRFU4105ZPBF-IR

IRFU4105ZPBF-IR

HEXFET N-CHANNEL POWER MOSFET

International Rectifier

11973 0.39
- +

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IRFU4105ZPBF-IR

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
RJK03M5DNS-00#J5

RJK03M5DNS-00#J5

MOSFET N-CH 30V 25A 8HWSON

Renesas Electronics America Inc

5000 0.49
- +

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RJK03M5DNS-00#J5

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta) 4.5V, 10V 6.3mOhm @ 12.5A, 10V - 10.4 nC @ 4.5 V ±20V 1890 pF @ 10 V - 15W (Tc) 150°C (TJ) Surface Mount
IAUC24N10S5L300ATMA1

IAUC24N10S5L300ATMA1

MOSFET N-CH 100V 24A TDSON-8-33

Infineon Technologies

4760 1.12
- +

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IAUC24N10S5L300ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 24A (Tc) 4.5V, 10V 30mOhm @ 12A, 10V 2.2V @ 12µA 11 nC @ 10 V ±20V 670 pF @ 50 V - 38W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPS01N60C3BKMA1

SPS01N60C3BKMA1

0.8A, 600V, N-CHANNEL MOSFET, T

Infineon Technologies

30000 0.40
- +

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SPS01N60C3BKMA1

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 800mA (Tc) 10V 6Ohm @ 500mA, 10V 3.9V @ 250µA 5 nC @ 10 V ±20V 100 pF @ 25 V - 11W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF76121P3

HUF76121P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

26402 0.40
- +

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HUF76121P3

Datenblatt

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Tc) 4.5V, 10V 21mOhm @ 47A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 850 pF @ 25 V - 75W (Tc) -40°C ~ 150°C (TJ) Through Hole
RFP14N05L

RFP14N05L

MOSFET N-CH 50V 14A TO220-3

Fairchild Semiconductor

26014 0.40
- +

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Немедленный

RFP14N05L

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 14A (Tc) 5V 100mOhm @ 14A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 670 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUZ73A

BUZ73A

MOSFET N-CH 200V 5.5A TO220-3

Harris Corporation

25614 0.40
- +

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BUZ73A

Datenblatt

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 600mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF76609D3

HUF76609D3

MOSFET N-CH 100V 10A IPAK

Fairchild Semiconductor

15455 0.40
- +

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Немедленный

HUF76609D3

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4.5V, 10V 160mOhm @ 10A, 10V 3V @ 250µA 16 nC @ 10 V ±16V 425 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) Through Hole
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