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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB41N15DPBF

IRFB41N15DPBF

MOSFET N-CH 150V 41A TO220AB

Infineon Technologies

3975 1.00
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IRFB41N15DPBF

Datenblatt

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3502SPBF

IRL3502SPBF

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies

2804 0.00
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IRL3502SPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 7V 7mOhm @ 64A, 7V 700mV @ 250µA (Min) 110 nC @ 4.5 V ±10V 4700 pF @ 15 V - 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS4710PBF

IRFS4710PBF

MOSFET N-CH 100V 75A D2PAK

Infineon Technologies

2096 0.00
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Немедленный

IRFS4710PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 45A, 10V 5.5V @ 250µA 170 nC @ 10 V ±20V 6160 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2807ZSPBF

IRF2807ZSPBF

MOSFET N-CH 75V 75A D2PAK

Infineon Technologies

2070 0.00
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Немедленный

IRF2807ZSPBF

Datenblatt

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
64-2092PBF

64-2092PBF

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies

2059 0.00
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64-2092PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB23N20DPBF

IRFB23N20DPBF

MOSFET N-CH 200V 24A TO220AB

Infineon Technologies

2085 0.00
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Немедленный

IRFB23N20DPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1404PBF

IRL1404PBF

MOSFET N-CH 40V 160A TO220AB

Infineon Technologies

2247 0.00
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Немедленный

IRL1404PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6590 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1404LPBF

IRL1404LPBF

MOSFET N-CH 40V 160A TO262

Infineon Technologies

2980 0.00
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Немедленный

IRL1404LPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBF30SPBF

IRFBF30SPBF

MOSFET N-CH 900V 3.6A D2PAK

Vishay Siliconix

2160 0.00
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Немедленный

IRFBF30SPBF

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3103SPBF

IRL3103SPBF

MOSFET N-CH 30V 64A D2PAK

Infineon Technologies

3859 0.00
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Немедленный

IRL3103SPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRCZ44PBF

IRCZ44PBF

MOSFET N-CH 60V 50A TO220-5

Vishay Siliconix

2816 0.00
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Немедленный

IRCZ44PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2500 pF @ 25 V Current Sensing 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRC740PBF

IRC740PBF

MOSFET N-CH 400V 10A TO220-5

Vishay Siliconix

2504 0.00
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Немедленный

IRC740PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 1200 pF @ 25 V Current Sensing 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRC644PBF

IRC644PBF

MOSFET N-CH 250V 14A TO220-5

Vishay Siliconix

2072 0.00
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Немедленный

IRC644PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1200 pF @ 25 V Current Sensing 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB31N20DPBF

IRFB31N20DPBF

MOSFET N-CH 200V 31A TO220AB

Infineon Technologies

2846 1.00
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Немедленный

IRFB31N20DPBF

Datenblatt

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS59N10DPBF

IRFS59N10DPBF

MOSFET N-CH 100V 59A D2PAK

Infineon Technologies

2014 1.00
- +

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Немедленный

IRFS59N10DPBF

Datenblatt

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS31N20DPBF

IRFS31N20DPBF

MOSFET N-CH 200V 31A D2PAK

Infineon Technologies

3531 1.00
- +

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Немедленный

IRFS31N20DPBF

Datenblatt

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB59N10DPBF

IRFB59N10DPBF

MOSFET N-CH 100V 59A TO220AB

Infineon Technologies

3613 0.00
- +

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Немедленный

IRFB59N10DPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI1010NPBF

IRFI1010NPBF

MOSFET N-CH 55V 49A TO220AB FP

Infineon Technologies

3472 1.00
- +

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Немедленный

IRFI1010NPBF

Datenblatt

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 12mOhm @ 26A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2900 pF @ 25 V - 58W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF1010NSPBF

IRF1010NSPBF

MOSFET N-CH 55V 85A D2PAK

Infineon Technologies

2522 0.00
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Немедленный

IRF1010NSPBF

Datenblatt

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRC840PBF

IRC840PBF

MOSFET N-CH 500V 8A TO220-5

Vishay Siliconix

2193 0.00
- +

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Немедленный

IRC840PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1300 pF @ 25 V Current Sensing 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
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