Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL8113PBF

IRL8113PBF

MOSFET N-CH 30V 105A TO220AB

Infineon Technologies

3969 0.00
- +

Добавить

Немедленный

IRL8113PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 105A (Tc) 4.5V, 10V 6mOhm @ 21A, 10V 2.25V @ 250µA 35 nC @ 4.5 V ±20V 2840 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ46ZSPBF

IRFZ46ZSPBF

MOSFET N-CH 55V 51A D2PAK

Infineon Technologies

2397 0.00
- +

Добавить

Немедленный

IRFZ46ZSPBF

Datenblatt

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.6mOhm @ 31A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1460 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLIZ24NPBF

IRLIZ24NPBF

MOSFET N-CH 55V 14A TO220AB FP

Infineon Technologies

2076 0.00
- +

Добавить

Немедленный

IRLIZ24NPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 14A (Tc) 4V, 10V 60mOhm @ 8.4A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 26W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z24NLPBF

IRF9Z24NLPBF

MOSFET P-CH 55V 12A TO262

Infineon Technologies

3190 0.00
- +

Добавить

Немедленный

IRF9Z24NLPBF

Datenblatt

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL8113SPBF

IRL8113SPBF

MOSFET N-CH 30V 105A D2PAK

Infineon Technologies

3722 0.00
- +

Добавить

Немедленный

IRL8113SPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 105A (Tc) 4.5V, 10V 6mOhm @ 21A, 10V 2.25V @ 250µA 35 nC @ 4.5 V ±20V 2840 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3709SPBF

IRF3709SPBF

MOSFET N-CH 30V 90A D2PAK

Infineon Technologies

3039 0.00
- +

Добавить

Немедленный

IRF3709SPBF

Datenblatt

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3709LPBF

IRF3709LPBF

MOSFET N-CH 30V 90A TO262

Infineon Technologies

2030 0.00
- +

Добавить

Немедленный

IRF3709LPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3709ZLPBF

IRF3709ZLPBF

MOSFET N-CH 30V 87A TO262

Infineon Technologies

3035 0.00
- +

Добавить

Немедленный

IRF3709ZLPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3706PBF

IRF3706PBF

MOSFET N-CH 20V 77A TO220AB

Infineon Technologies

3083 0.00
- +

Добавить

Немедленный

IRF3706PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3708PBF

IRF3708PBF

MOSFET N-CH 30V 62A TO220AB

Infineon Technologies

2310 0.00
- +

Добавить

Немедленный

IRF3708PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3709ZSPBF

IRF3709ZSPBF

MOSFET N-CH 30V 87A D2PAK

Infineon Technologies

2300 0.00
- +

Добавить

Немедленный

IRF3709ZSPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3707PBF

IRF3707PBF

MOSFET N-CH 30V 62A TO220AB

Infineon Technologies

2572 0.00
- +

Добавить

Немедленный

IRF3707PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34NSPBF

IRFZ34NSPBF

MOSFET N-CH 55V 29A D2PAK

Infineon Technologies

3960 0.00
- +

Добавить

Немедленный

IRFZ34NSPBF

Datenblatt

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFI624GPBF

IRFI624GPBF

MOSFET N-CH 250V 3.4A TO220-3

Vishay Siliconix

2084 0.00
- +

Добавить

Немедленный

IRFI624GPBF

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3.4A (Tc) 10V 1.1Ohm @ 2A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ48ZSPBF

IRFZ48ZSPBF

MOSFET N-CH 55V 61A D2PAK

Infineon Technologies

2538 0.00
- +

Добавить

Немедленный

IRFZ48ZSPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLI620GPBF

IRLI620GPBF

MOSFET N-CH 200V 4A TO220-3

Vishay Siliconix

2439 0.00
- +

Добавить

Немедленный

IRLI620GPBF

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4A (Tc) 4V, 5V 800mOhm @ 2.4A, 5V 2V @ 250µA 16 nC @ 10 V ±10V 360 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3707LPBF

IRF3707LPBF

MOSFET N-CH 30V 62A TO262

Infineon Technologies

2580 0.00
- +

Добавить

Немедленный

IRF3707LPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3706LPBF

IRF3706LPBF

MOSFET N-CH 20V 77A TO262

Infineon Technologies

3583 0.00
- +

Добавить

Немедленный

IRF3706LPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3706SPBF

IRF3706SPBF

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies

2176 0.00
- +

Добавить

Немедленный

IRF3706SPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3704SPBF

IRF3704SPBF

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies

2132 0.00
- +

Добавить

Немедленный

IRF3704SPBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 42446 Records«Prev1... 14391440144114421443144414451446...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи