Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFP4232PBF

IRFP4232PBF

MOSFET N-CH 250V 60A TO247AC

Infineon Technologies

2205 0.00
- +

Добавить

Немедленный

IRFP4232PBF

Datenblatt

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 35.7mOhm @ 42A, 10V 5V @ 250µA 240 nC @ 10 V ±20V 7290 pF @ 25 V - 430W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRF7495PBF

IRF7495PBF

MOSFET N-CH 100V 7.3A 8SO

Infineon Technologies

3377 0.00
- +

Добавить

Немедленный

IRF7495PBF

Datenblatt

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 7.3A (Ta) 10V 22mOhm @ 4.4A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 1530 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFB3307

IRFB3307

MOSFET N-CH 75V 130A TO220AB

Infineon Technologies

2269 0.00
- +

Добавить

Немедленный

IRFB3307

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 130A (Tc) 10V 6.3mOhm @ 75A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK2731T146

2SK2731T146

MOSFET N-CH 30V 200MA SMT3

Rohm Semiconductor

3215 0.00
- +

Добавить

Немедленный

2SK2731T146

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 200mA (Ta) 4V, 10V 2.8Ohm @ 100mA, 10V 2.5V @ 1mA - ±20V 25 pF @ 10 V - 200mW (Ta) 150°C (TJ) Surface Mount
2SK2887TL

2SK2887TL

MOSFET N-CH 200V 3A CPT3

Rohm Semiconductor

3267 0.00
- +

Добавить

Немедленный

2SK2887TL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 3A (Ta) 10V 900mOhm @ 1.5A, 10V 4V @ 1mA 8.5 nC @ 10 V ±30V 230 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
RK3055ETL

RK3055ETL

MOSFET N-CH 60V 8A CPT3

Rohm Semiconductor

2692 0.00
- +

Добавить

Немедленный

RK3055ETL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta) 10V 150mOhm @ 4A, 10V 2.5V @ 1mA - ±20V 520 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
RK7002AT116

RK7002AT116

MOSFET N-CH 60V 300MA SST3

Rohm Semiconductor

3657 0.00
- +

Добавить

Немедленный

RK7002AT116

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4V, 10V 1Ohm @ 300mA, 10V 2.5V @ 1mA 6 nC @ 10 V ±20V 33 pF @ 10 V - 200mW (Ta) 150°C (TJ) Surface Mount
RSS075P03TB

RSS075P03TB

MOSFET P-CH 30V 7.5A 8SOP

Rohm Semiconductor

2209 0.00
- +

Добавить

Немедленный

RSS075P03TB

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 7.5A (Ta) 4V, 10V 21mOhm @ 7.5A, 10V 2.5V @ 1mA 30 nC @ 5 V ±20V 2900 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
IRFB3507

IRFB3507

MOSFET N-CH 75V 97A TO220AB

Infineon Technologies

2073 0.00
- +

Добавить

Немедленный

IRFB3507

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 97A (Tc) 10V 8.8mOhm @ 58A, 10V 4V @ 100µA 130 nC @ 10 V ±20V 3540 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB3507PBF

IRFB3507PBF

MOSFET N-CH 75V 97A TO220AB

Infineon Technologies

3741 0.00
- +

Добавить

Немедленный

IRFB3507PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 97A (Tc) 10V 8.8mOhm @ 58A, 10V 4V @ 100µA 130 nC @ 10 V ±20V 3540 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4410

IRFB4410

MOSFET N-CH 100V 96A TO220AB

Infineon Technologies

2482 0.00
- +

Добавить

Немедленный

IRFB4410

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 96A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4610

IRFB4610

MOSFET N-CH 100V 73A TO220AB

Infineon Technologies

3191 0.00
- +

Добавить

Немедленный

IRFB4610

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS3307

IRFS3307

MOSFET N-CH 75V 130A D2PAK

Infineon Technologies

2507 0.00
- +

Добавить

Немедленный

IRFS3307

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 130A (Tc) 10V 6.3mOhm @ 75A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4410

IRFS4410

MOSFET N-CH 100V 96A D2PAK

Infineon Technologies

2962 0.00
- +

Добавить

Немедленный

IRFS4410

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 96A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4610

IRFS4610

MOSFET N-CH 100V 73A D2PAK

Infineon Technologies

3291 0.00
- +

Добавить

Немедленный

IRFS4610

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4610PBF

IRFS4610PBF

MOSFET N-CH 100V 73A D2PAK

Infineon Technologies

3568 0.00
- +

Добавить

Немедленный

IRFS4610PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL3207

IRFSL3207

MOSFET N-CH 75V 180A TO262

Infineon Technologies

3968 0.00
- +

Добавить

Немедленный

IRFSL3207

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 180A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL3307

IRFSL3307

MOSFET N-CH 75V 130A TO262

Infineon Technologies

3137 0.00
- +

Добавить

Немедленный

IRFSL3307

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 130A (Tc) 10V 6.3mOhm @ 75A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL3507

IRFSL3507

MOSFET N-CH 75V 97A TO262

Infineon Technologies

3779 0.00
- +

Добавить

Немедленный

IRFSL3507

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 97A (Tc) 10V 8.8mOhm @ 58A, 10V 4V @ 100µA 130 nC @ 10 V ±20V 3540 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4410

IRFSL4410

MOSFET N-CH 100V 96A TO262

Infineon Technologies

3484 0.00
- +

Добавить

Немедленный

IRFSL4410

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 96A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 42446 Records«Prev1... 14261427142814291430143114321433...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи