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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSP125L6433

BSP125L6433

N-CHANNEL POWER MOSFET

Infineon Technologies

252459 0.31
- +

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BSP125L6433

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FQD630TF

FQD630TF

MOSFET N-CH 200V 7A DPAK

Fairchild Semiconductor

213503 0.31
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FQD630TF

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Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 550 pF @ 25 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MMSF2P02ER2

MMSF2P02ER2

P-CHANNEL POWER MOSFET

onsemi

94753 0.31
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MMSF2P02ER2

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2N7000

2N7000

MOSFET N-CHANNEL 60V 200MA TO92

NTE Electronics, Inc

4805 0.40
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2N7000

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Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) - 5Ohm @ 500mA, 10V 3V @ 1mA - - 60 pF @ 25 V - - - Through Hole
FQP13N06

FQP13N06

MOSFET N-CH 60V 13A TO220-3

Fairchild Semiconductor

79652 0.31
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FQP13N06

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 13A (Tc) 10V 135mOhm @ 6.5A, 10V 4V @ 250µA 7.5 nC @ 10 V ±25V 310 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD20N06LETM

FQD20N06LETM

MOSFET N-CH 60V 17.2A DPAK

Fairchild Semiconductor

57088 0.31
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FQD20N06LETM

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Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17.2A (Tc) 5V, 10V 60mOhm @ 8.6A, 10V 2.5V @ 250µA 13 nC @ 5 V ±20V 665 pF @ 25 V - 2.5W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK3449

2SK3449

N-CHANNEL SMALL SIGNAL MOSFET

onsemi

51912 0.31
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2SK3449

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FDU6612A

FDU6612A

MOSFET N-CH 30V 9.5A/30A IPAK

Fairchild Semiconductor

44990 0.31
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FDU6612A

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Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta), 30A (Tc) 4.5V, 10V 20mOhm @ 9.5A, 10V 3V @ 250µA 9.4 nC @ 5 V ±20V 660 pF @ 15 V - 2.8W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC0908NS

BSC0908NS

N-CHANNEL POWER MOSFET

Infineon Technologies

41400 0.31
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BSC0908NS

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Bulk - Active - - - - - - - - - - - - - -
2SJ210(0)-T1B-A

2SJ210(0)-T1B-A

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc

40910 0.31
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2SJ210(0)-T1B-A

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Bulk * Active - - - - - - - - - - - - - -
2SK2373ZE-TL-E

2SK2373ZE-TL-E

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc

36000 0.31
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2SK2373ZE-TL-E

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3SK298ZP-TL-E

3SK298ZP-TL-E

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc

33000 0.31
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3SK298ZP-TL-E

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2SJ206-T1-AZ

2SJ206-T1-AZ

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc

27000 0.31
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2SJ206-T1-AZ

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MTP1N60E

MTP1N60E

N-CHANNEL POWER MOSFET

onsemi

23123 0.31
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MTP1N60E

Datenblatt

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2SJ210(0)-T1B-AT

2SJ210(0)-T1B-AT

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc

21000 0.31
- +

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2SJ210(0)-T1B-AT

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
2SK1583-AZ

2SK1583-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc

14625 0.31
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2SK1583-AZ

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Bulk * Active - - - - - - - - - - - - - -
FDMA0104

FDMA0104

TRANS MOSFET N-CH 20V 9.4A 6PIN

Fairchild Semiconductor

11154 0.31
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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) - 14.5mOhm @ 9.4A, 4.5V 1V @ 250µA 17.5 nC @ 4.5 V - 1680 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP4N20

FQP4N20

MOSFET N-CH 200V 3.6A TO220-3

Fairchild Semiconductor

10753 0.31
- +

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FQP4N20

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.4Ohm @ 1.8A, 10V 5V @ 250µA 6.5 nC @ 10 V ±30V 220 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6000ENHTB1

R6000ENHTB1

600V 0.5A, SOP8, LOW-NOISE POWER

Rohm Semiconductor

2500 0.94
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R6000ENHTB1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 500mA (Ta) 10V 8.8Ohm @ 200mA, 10V 5V @ 1mA 4.3 nC @ 10 V ±20V 45 pF @ 25 V - 2W (Ta) 150°C Surface Mount
IRF610B

IRF610B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

4539 0.31
- +

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IRF610B

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 1.65A, 10V 4V @ 250µA 9.3 nC @ 10 V ±30V 225 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
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