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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFS11N50ATRR

IRFS11N50ATRR

MOSFET N-CH 500V 11A D2PAK

Vishay Siliconix

3911 0.00
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IRFS11N50ATRR

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS31N20DTRL

IRFS31N20DTRL

MOSFET N-CH 200V 31A D2PAK

Infineon Technologies

3857 0.00
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IRFS31N20DTRL

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS31N20DTRR

IRFS31N20DTRR

MOSFET N-CH 200V 31A D2PAK

Infineon Technologies

3554 0.00
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IRFS31N20DTRR

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS41N15DTRR

IRFS41N15DTRR

MOSFET N-CH 150V 41A D2PAK

Infineon Technologies

2198 0.00
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IRFS41N15DTRR

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 3.1W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRFS9N60ATRL

IRFS9N60ATRL

MOSFET N-CH 600V 9.2A D2PAK

Vishay Siliconix

2326 0.00
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IRFS9N60ATRL

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS9N60ATRR

IRFS9N60ATRR

MOSFET N-CH 600V 9.2A D2PAK

Vishay Siliconix

3038 0.00
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IRFS9N60ATRR

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL31N20DTRL

IRFSL31N20DTRL

MOSFET N-CH 200V 31A I2PAK

Vishay Siliconix

2212 0.00
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Немедленный

IRFSL31N20DTRL

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL31N20DTRR

IRFSL31N20DTRR

MOSFET N-CH 200V 31A I2PAK

Vishay Siliconix

3946 0.00
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Немедленный

IRFSL31N20DTRR

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL41N15D

IRFSL41N15D

MOSFET N-CH 150V 41A TO262

Infineon Technologies

3094 0.00
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IRFSL41N15D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 3.1W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFSL9N60ATRL

IRFSL9N60ATRL

MOSFET N-CH 600V 9.2A I2PAK

Vishay Siliconix

3631 0.00
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Немедленный

IRFSL9N60ATRL

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL9N60ATRR

IRFSL9N60ATRR

MOSFET N-CH 600V 9.2A I2PAK

Vishay Siliconix

2873 0.00
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Немедленный

IRFSL9N60ATRR

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU010

IRFU010

MOSFET N-CH 50V 8.2A TO251AA

Vishay Siliconix

3472 0.00
- +

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Немедленный

IRFU010

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 8.2A (Tc) 10V 200mOhm @ 4.2A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 250 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU1N60A

IRFU1N60A

MOSFET N-CH 600V 1.4A TO251AA

Vishay Siliconix

2740 0.00
- +

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Немедленный

IRFU1N60A

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9010

IRFU9010

MOSFET P-CH 50V 5.3A TO251AA

Vishay Siliconix

3284 0.00
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Немедленный

IRFU9010

Datenblatt

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ10

IRFZ10

MOSFET N-CH 60V 10A TO220AB

Vishay Siliconix

2203 0.00
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Немедленный

IRFZ10

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ14L

IRFZ14L

MOSFET N-CH 60V 10A TO262-3

Vishay Siliconix

3159 0.00
- +

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Немедленный

IRFZ14L

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ14STRL

IRFZ14STRL

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix

3189 0.00
- +

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Немедленный

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ14STRR

IRFZ14STRR

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix

2469 0.00
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Немедленный

IRFZ14STRR

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ24L

IRFZ24L

MOSFET N-CH 60V 17A TO262-3

Vishay Siliconix

2776 0.00
- +

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Немедленный

IRFZ24L

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ24NSTRL

IRFZ24NSTRL

MOSFET N-CH 55V 17A D2PAK

Infineon Technologies

2473 0.00
- +

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Немедленный

IRFZ24NSTRL

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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