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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFP360

IRFP360

MOSFET N-CH 400V 23A TO247-3

Vishay Siliconix

2002 0.00
- +

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IRFP360

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 23A (Tc) 10V 200mOhm @ 14A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 4500 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP440

IRFP440

MOSFET N-CH 500V 8.8A TO247-3

Vishay Siliconix

3492 0.00
- +

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Немедленный

IRFP440

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8.8A (Tc) 10V 850mOhm @ 5.3A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP450

IRFP450

MOSFET N-CH 500V 14A TO247-3

Vishay Siliconix

3452 0.00
- +

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Немедленный

IRFP450

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 8.4A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 2600 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP460

IRFP460

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix

2783 0.00
- +

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Немедленный

IRFP460

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 4200 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPC50

IRFPC50

MOSFET N-CH 600V 11A TO247-3

Vishay Siliconix

3558 0.00
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Немедленный

IRFPC50

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 600mOhm @ 6A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2700 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPE30

IRFPE30

MOSFET N-CH 800V 4.1A TO247-3

Vishay Siliconix

3444 0.00
- +

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Немедленный

IRFPE30

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPE50

IRFPE50

MOSFET N-CH 800V 7.8A TO247-3

Vishay Siliconix

2543 0.00
- +

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Немедленный

IRFPE50

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 7.8A (Tc) 10V 1.2Ohm @ 4.7A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 3100 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPF30

IRFPF30

MOSFET N-CH 900V 3.6A TO247-3

Vishay Siliconix

2386 0.00
- +

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Немедленный

IRFPF30

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPF50

IRFPF50

MOSFET N-CH 900V 6.7A TO247-3

Vishay Siliconix

2301 0.00
- +

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Немедленный

IRFPF50

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 6.7A (Tc) 10V 1.6Ohm @ 4A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2900 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPG30

IRFPG30

MOSFET N-CH 1000V 3.1A TO247-3

Vishay Siliconix

2344 0.00
- +

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Немедленный

IRFPG30

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPG50

IRFPG50

MOSFET N-CH 1000V 6.1A TO247-3

Vishay Siliconix

2819 0.00
- +

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Немедленный

IRFPG50

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 6.1A (Tc) 10V 2Ohm @ 3.6A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 2800 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP9240

IRFP9240

MOSFET P-CH 200V 12A TO247-3

Vishay Siliconix

3062 0.00
- +

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Немедленный

IRFP9240

Datenblatt

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 12A (Tc) 10V 500mOhm @ 7.2A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBE20

IRFBE20

MOSFET N-CH 800V 1.8A TO220AB

Vishay Siliconix

2852 0.00
- +

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Немедленный

IRFBE20

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBE30

IRFBE30

MOSFET N-CH 800V 4.1A TO220AB

Vishay Siliconix

3075 0.00
- +

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Немедленный

IRFBE30

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBF20

IRFBF20

MOSFET N-CH 900V 1.7A TO220AB

Vishay Siliconix

2819 0.00
- +

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Немедленный

IRFBF20

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBF30

IRFBF30

MOSFET N-CH 900V 3.6A TO220AB

Vishay Siliconix

2871 0.00
- +

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Немедленный

IRFBF30

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBG20

IRFBG20

MOSFET N-CH 1000V 1.4A TO220AB

Vishay Siliconix

3899 0.00
- +

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Немедленный

IRFBG20

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 1.4A (Tc) 10V 11Ohm @ 840mA, 10V 4V @ 250µA 38 nC @ 10 V ±20V 500 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBG30

IRFBG30

MOSFET N-CH 1000V 3.1A TO220AB

Vishay Siliconix

2882 0.00
- +

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Немедленный

IRFBG30

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH12N90

IXFH12N90

MOSFET N-CH 900V 12A TO247AD

IXYS

2712 0.00
- +

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Немедленный

IXFH12N90

Datenblatt

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 900 V 12A (Tc) 10V 900mOhm @ 6A, 10V 4.5V @ 4mA 155 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH6N100

IXFH6N100

MOSFET N-CH 1000V 6A TO247AD

IXYS

2916 0.00
- +

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Немедленный

IXFH6N100

Datenblatt

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tc) 10V 2Ohm @ 500mA, 10V 4.5V @ 2.5mA 130 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
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