Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFN32N80P

IXFN32N80P

MOSFET N-CH 800V 29A SOT-227B

IXYS

2486 25.49
- +

Добавить

Немедленный

IXFN32N80P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 29A (Tc) 10V 270mOhm @ 16A, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8820 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFR40N90P

IXFR40N90P

MOSFET N-CH 900V 21A ISOPLUS247

IXYS

2170 25.71
- +

Добавить

Немедленный

IXFR40N90P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 21A (Tc) 10V 230mOhm @ 20A, 10V 6.5V @ 1mA 230 nC @ 10 V ±30V 14000 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT12080LVRG

APT12080LVRG

MOSFET N-CH 1200V 16A TO264

Microchip Technology

2674 25.78
- +

Добавить

Немедленный

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1200 V 16A (Tc) 10V 800mOhm @ 8A, 10V 4V @ 2.5mA 485 nC @ 10 V ±30V 7800 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXKR40N60C

IXKR40N60C

MOSFET N-CH 600V 38A ISOPLUS247

IXYS

3389 25.86
- +

Добавить

Немедленный

IXKR40N60C

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 70mOhm @ 25A, 10V 3.9V @ 3mA 250 nC @ 10 V ±20V - Super Junction - -40°C ~ 150°C (TJ) Through Hole
APT56F60B2

APT56F60B2

MOSFET N-CH 600V 60A T-MAX

Microchip Technology

2438 26.04
- +

Добавить

Немедленный

APT56F60B2

Datenblatt

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 110mOhm @ 28A, 10V 5V @ 2.5mA 280 nC @ 10 V ±30V 11300 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCTH60N120G2-7

SCTH60N120G2-7

PTD WBG & POWER RF

STMicroelectronics

2022 26.05
- +

Добавить

Немедленный

SCTH60N120G2-7

Datenblatt

Tape & Reel (TR) - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 60A (Tc) 18V 52mOhm @ 30A, 10V 5V @ 1mA 94 nC @ 18 V +22V, -10V 1969 pF @ 800 V - 390W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT10050LVFRG

APT10050LVFRG

MOSFET N-CH 1000V 21A TO264

Microchip Technology

2794 26.37
- +

Добавить

Немедленный

APT10050LVFRG

Datenblatt

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) - 500mOhm @ 500mA, 10V 4V @ 2.5mA 500 nC @ 10 V - 7900 pF @ 25 V - - - Through Hole
APT10050B2VFRG

APT10050B2VFRG

MOSFET N-CH 1000V 21A T-MAX

Microchip Technology

3907 26.44
- +

Добавить

Немедленный

APT10050B2VFRG

Datenblatt

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) - 500mOhm @ 500mA, 10V 4V @ 2.5mA 500 nC @ 10 V - 7900 pF @ 25 V - - - Through Hole
APT40N60JCU3

APT40N60JCU3

MOSFET N-CH 600V 40A SOT227

Microchip Technology

3151 26.62
- +

Добавить

Немедленный

APT40N60JCU3

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 70mOhm @ 20A, 10V 3.9V @ 1mA 259 nC @ 10 V ±20V 7015 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT6011B2VRG

APT6011B2VRG

MOSFET N-CH 600V 49A T-MAX

Microchip Technology

2034 26.70
- +

Добавить

Немедленный

APT6011B2VRG

Datenblatt

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 600 V 49A (Tc) - 110mOhm @ 24.5A, 10V 4V @ 2.5mA 450 nC @ 10 V - 8900 pF @ 25 V - - - Through Hole
APT30M60J

APT30M60J

MOSFET N-CH 600V 31A ISOTOP

Microchip Technology

2717 26.72
- +

Добавить

Немедленный

APT30M60J

Datenblatt

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 150mOhm @ 21A, 10V 5V @ 2.5mA 215 nC @ 10 V ±30V 5890 pF @ 25 V - 355W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN120N20

IXFN120N20

MOSFET N-CH 200V 120A SOT-227B

IXYS

3481 26.93
- +

Добавить

Немедленный

IXFN120N20

Datenblatt

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) 10V 17mOhm @ 500mA, 10V 4V @ 8mA 360 nC @ 10 V ±20V 9100 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT20M16LFLLG

APT20M16LFLLG

MOSFET N-CH 200V 100A TO264

Microchip Technology

3257 27.26
- +

Добавить

Немедленный

APT20M16LFLLG

Datenblatt

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 16mOhm @ 50A, 10V 5V @ 2.5mA 140 nC @ 10 V - 7220 pF @ 25 V - - - Through Hole
IXFL60N80P

IXFL60N80P

MOSFET N-CH 800V 40A ISOPLUS264

IXYS

3839 27.27
- +

Добавить

Немедленный

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 40A (Tc) 10V 150mOhm @ 30A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK26N100P

IXFK26N100P

MOSFET N-CH 1000V 26A TO264AA

IXYS

3426 27.34
- +

Добавить

Немедленный

IXFK26N100P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 390mOhm @ 13A, 10V 6.5V @ 1mA 197 nC @ 10 V ±30V 11900 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR20N120P

IXFR20N120P

MOSFET N-CH 1200V 13A ISOPLUS247

IXYS

3612 27.37
- +

Добавить

Немедленный

IXFR20N120P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 13A (Tc) 10V 630mOhm @ 10A, 10V 6.5V @ 1mA 193 nC @ 10 V ±30V 11100 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M18B2VFRG

APT20M18B2VFRG

MOSFET N-CH 200V 100A T-MAX

Microchip Technology

3781 27.49
- +

Добавить

Немедленный

APT20M18B2VFRG

Datenblatt

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 18mOhm @ 50A, 10V 4V @ 2.5mA 330 nC @ 10 V - 9880 pF @ 25 V - - - Through Hole
APT10045LLLG

APT10045LLLG

MOSFET N-CH 1000V 23A TO264

Microchip Technology

2069 27.59
- +

Добавить

Немедленный

APT10045LLLG

Datenblatt

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) - 450mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V - 4350 pF @ 25 V - - - Through Hole
IXFX26N120P

IXFX26N120P

MOSFET N-CH 1200V 26A PLUS247-3

IXYS

3003 27.61
- +

Добавить

Немедленный

IXFX26N120P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 26A (Tc) 10V 500mOhm @ 13A, 10V 6.5V @ 1mA 225 nC @ 10 V ±30V 16000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB52N90P

IXFB52N90P

MOSFET N-CH 900V 52A PLUS264

IXYS

2809 27.85
- +

Добавить

Немедленный

IXFB52N90P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 52A (Tc) 10V 160mOhm @ 26A, 10V 6.5V @ 1mA 308 nC @ 10 V ±30V 19000 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 42446 Records«Prev1... 12231224122512261227122812291230...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи