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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFP4568-E

AUIRFP4568-E

MOSFET N-CH 150V 171A TO247AD

Infineon Technologies

2581 9.64
- +

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AUIRFP4568-E

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 171A (Tc) 10V 5.9mOhm @ 103A, 10V 5V @ 250µA 227 nC @ 10 V ±30V 10470 pF @ 50 V - 517W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT5024SLLG

APT5024SLLG

MOSFET N-CH 500V 22A D3PAK

Microchip Technology

3252 9.66
- +

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APT5024SLLG

Datenblatt

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) - 240mOhm @ 11A, 10V 5V @ 1mA 43 nC @ 10 V - 1900 pF @ 25 V - - - Surface Mount
STW63N65DM2

STW63N65DM2

MOSFET N-CH 650V 65A TO247

STMicroelectronics

2518 9.69
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Tube FDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 650 V 60A (Tc) - - - - - - - - - Through Hole
IXFT150N17T2

IXFT150N17T2

MOSFET N-CH 175V 150A TO268HV

IXYS

2835 9.73
- +

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IXFT150N17T2

Datenblatt

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 175 V 150A (Tc) 10V 12mOhm @ 75A, 10V 4.5V @ 1mA 233 nC @ 10 V ±20V 14600 pF @ 25 V - 880W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH96N20P

IXFH96N20P

MOSFET N-CH 200V 96A TO247AD

IXYS

2050 9.80
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IXFH96N20P

Datenblatt

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 4mA 145 nC @ 10 V ±20V 4800 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH160N15T

IXTH160N15T

MOSFET N-CH 150V 160A TO247

IXYS

2618 9.81
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IXTH160N15T

Datenblatt

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 160A (Tc) 10V 9.6mOhm @ 500mA, 10V 5V @ 1mA 160 nC @ 10 V ±30V 8800 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R075CPAFKSA1

IPW60R075CPAFKSA1

AUTOMOTIVE

Infineon Technologies

2587 9.84
- +

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IPW60R075CPAFKSA1

Datenblatt

Tube * Active - - - - - - - - - - - - - -
IPDQ60R045CFD7XTMA1

IPDQ60R045CFD7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies

3080 9.89
- +

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Tape & Reel (TR) CoolMOS™ Active - MOSFET (Metal Oxide) 600 V - - - - - - - - - - Surface Mount
SIHG64N65E-GE3

SIHG64N65E-GE3

MOSFET N-CH 650V 64A TO247AC

Vishay Siliconix

3640 9.98
- +

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SIHG64N65E-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 47mOhm @ 32A, 10V 4V @ 250µA 369 nC @ 10 V ±30V 7497 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW70N65M2

STW70N65M2

MOSFET N-CH 650V 63A TO247-3

STMicroelectronics

2959 9.99
- +

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STW70N65M2

Datenblatt

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 63A (Tc) 10V 46mOhm @ 31.5A, 10V 4V @ 250µA 117 nC @ 10 V ±25V 5140 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT26N60P

IXTT26N60P

MOSFET N-CH 600V 26A TO268

IXYS

3874 10.01
- +

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IXTT26N60P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 270mOhm @ 500mA, 10V 5V @ 250µA 72 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP6N120P

IXFP6N120P

MOSFET N-CH 1200V 6A TO220AB

IXYS

2493 10.02
- +

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IXFP6N120P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.4Ohm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 2830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG61N65EF-GE3

SIHG61N65EF-GE3

MOSFET N-CH 650V 64A TO247AC

Vishay Siliconix

2843 10.07
- +

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SIHG61N65EF-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 47mOhm @ 30.5A, 10V 4V @ 250µA 371 nC @ 10 V ±30V 7407 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHW61N65EF-GE3

SIHW61N65EF-GE3

MOSFET N-CH 650V 64A TO247AD

Vishay Siliconix

2737 10.07
- +

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Немедленный

SIHW61N65EF-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 47mOhm @ 30.5A, 10V 4V @ 250µA 371 nC @ 10 V ±30V 7407 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDCTR30120A

NDCTR30120A

MOSFET N-CH 1200V 30A SMD

onsemi

3154 10.13
- +

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Tape & Reel (TR) - Active - - - - - - - - - - - - - -
NTMTS0D4N04CLTXG

NTMTS0D4N04CLTXG

MOSFET N-CH 40V 79.8A 8DFNW

onsemi

3560 10.14
- +

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Немедленный

NTMTS0D4N04CLTXG

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 79.8A (Ta), 553.8A (Tc) 4.5V, 10V 0.4mOhm @ 50A, 10V 2.5V @ 250µA 341 nC @ 10 V ±20V 20600 pF @ 20 V - 5W (Ta), 244W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH15N60

IXFH15N60

MOSFET N-CH 600V 15A TO-247AD

IXYS

2338 10.15
- +

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Немедленный

IXFH15N60

Datenblatt

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 500mOhm @ 500mA, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 4500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH47N60-F085

FCH47N60-F085

MOSFET N-CH 600V 47A TO247-3

onsemi

3012 10.19
- +

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Немедленный

FCH47N60-F085

Datenblatt

Tube,Tube Automotive, AEC-Q101, SuperFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 79mOhm @ 47A, 10V 5V @ 250µA 250 nC @ 10 V ±30V 8000 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR4N100Q

IXFR4N100Q

MOSFET N-CH 1000V 3.5A ISOPLS247

IXYS

2043 10.21
- +

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Немедленный

IXFR4N100Q

Datenblatt

Box HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 1000 V 3.5A (Tc) 10V 3Ohm @ 2A, 10V 5V @ 1.5mA 39 nC @ 10 V ±20V 1050 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVHL060N090SC1

NVHL060N090SC1

SICFET N-CH 900V 46A TO247-3

onsemi

3178 10.21
- +

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Немедленный

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 900 V 46A (Tc) 15V 84mOhm @ 20A, 15V 4.3V @ 5mA 87 nC @ 15 V +19V, -10V 1770 pF @ 450 V - 221W (Tc) -55°C ~ 175°C (TJ) Through Hole
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