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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFRC20TRRPBF

IRFRC20TRRPBF

MOSFET N-CH 600V 2A DPAK

Vishay Siliconix

3005 1.89
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IRFRC20TRRPBF

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFRC20PBF-BE3

IRFRC20PBF-BE3

N-CHANNEL 600V

Vishay Siliconix

3061 0.96
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IRFRC20PBF-BE3

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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPAW60R360P7SE8228XKSA1

IPAW60R360P7SE8228XKSA1

MOSFET N-CH 600V 9A TO220

Infineon Technologies

2291 0.96
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Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 22W (Tc) -40°C ~ 150°C (TJ) Through Hole
TSM9409CS RLG

TSM9409CS RLG

MOSFET P-CHANNEL 60V 3.5A 8SOP

Taiwan Semiconductor Corporation

2269 0.96
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TSM9409CS RLG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 3.5A (Ta) 4.5V, 10V 155mOhm @ 3.5A, 10V 1V @ 250µA 6 nC @ 10 V ±20V 540 pF @ 30 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5831NLWFT1G

NVMFS5831NLWFT1G

T2 40V LL, SINGLE NCH, SO-8FL 2.

onsemi

2475 0.96
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Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 26A (Ta), 161A (Tc) 4.5V, 10V 2.95mOhm @ 20A, 10V 2.4V @ 250µA 90 nC @ 10 V ±20V 4946 pF @ 25 V - 3.8W (Ta), 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
AOT11N70

AOT11N70

MOSFET N-CH 700V 11A TO220

Alpha & Omega Semiconductor Inc.

3566 0.96
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AOT11N70

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 11A (Tc) 10V 870mOhm @ 5.5A, 10V 4.5V @ 250µA 45 nC @ 10 V ±30V 2150 pF @ 25 V - 271W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF11N70

AOTF11N70

MOSFET N-CH 700V 11A TO220-3F

Alpha & Omega Semiconductor Inc.

2404 0.96
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AOTF11N70

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 11A (Tc) 10V 870mOhm @ 5.5A, 10V 4.5V @ 250µA 45 nC @ 10 V ±30V 2150 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF14N50

AOTF14N50

MOSFET N-CH 500V 14A TO220-3F

Alpha & Omega Semiconductor Inc.

3325 0.96
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AOTF14N50

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 380mOhm @ 7A, 10V 4.5V @ 250µA 51 nC @ 10 V ±30V 2297 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80N04S4L04ATMA1

IPB80N04S4L04ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies

3412 1.00
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IPB80N04S4L04ATMA1

Datenblatt

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4mOhm @ 80A, 10V 2.2V @ 35µA 60 nC @ 10 V +20V, -16V 4690 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y12-100EX

BUK7Y12-100EX

MOSFET N-CH 100V 85A LFPAK56

Nexperia USA Inc.

3085 0.97
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BUK7Y12-100EX

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 10V 12mOhm @ 25A, 10V 4V @ 1mA 68 nC @ 10 V ±20V 5067 pF @ 25 V - 238W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STL10N65M2

STL10N65M2

MOSFET N-CH 650V 4.5A POWERFLAT

STMicroelectronics

3191 0.97
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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 1Ohm @ 2.5A, 10V 4V @ 250µA 10.3 nC @ 10 V ±25V 315 pF @ 100 V - 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7E13-60E,127

BUK7E13-60E,127

MOSFET N-CH 60V 58A I2PAK

Nexperia USA Inc.

2259 0.97
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BUK7E13-60E,127

Datenblatt

Tube Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 58A (Tc) 10V 13mOhm @ 15A, 10V 4V @ 1mA 22.9 nC @ 10 V ±20V 1730 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOB2606L

AOB2606L

MOSFET N-CH 60V 13A/72A TO263

Alpha & Omega Semiconductor Inc.

2698 0.97
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AOB2606L

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 13A (Ta), 72A (Tc) 10V 6.2mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 4050 pF @ 30 V - 2.1W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP10NK62ZFP

STP10NK62ZFP

MOSFET

STMicroelectronics

3919 0.97
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AOW12N60

AOW12N60

MOSFET N-CH 600V 12A TO262

Alpha & Omega Semiconductor Inc.

3500 0.97
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AOW12N60

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 550mOhm @ 6A, 10V 4.5V @ 250µA 50 nC @ 10 V ±30V 2100 pF @ 25 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF820LPBF

IRF820LPBF

MOSFET N-CH 500V 2.5A I2PAK

Vishay Siliconix

3743 0.97
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IRF820LPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHU7N60E-GE3

SIHU7N60E-GE3

MOSFET N-CH 600V 7A IPAK

Vishay Siliconix

2214 0.97
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SIHU7N60E-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4427BDY-T1-GE3

SI4427BDY-T1-GE3

MOSFET P-CH 30V 9.7A 8SO

Vishay Siliconix

3841 0.97
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SI4427BDY-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 9.7A (Ta) 10V 10.5mOhm @ 12.6A, 10V 1.4V @ 250µA 70 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NVMFS4C03NWFT3G

NVMFS4C03NWFT3G

MOSFET N-CH 30V 31.4A/143A 5DFN

onsemi

2564 0.97
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NVMFS4C03NWFT3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 31.4A (Ta), 143A (Tc) 4.5V, 10V 2.1mOhm @ 30A, 10V 2.2V @ 250µA 45.2 nC @ 10 V ±20V 3071 pF @ 15 V - 3.71W (Ta), 77W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMT40M9LPS-13

DMT40M9LPS-13

MOSFET BVDSS: 31V-40V POWERDI506

Diodes Incorporated

3299 0.97
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Tape & Reel (TR) * Active - - - - - - - - - - - - - -
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