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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AOTF12N30

AOTF12N30

MOSFET N-CH 300V 11.5A TO220-3F

Alpha & Omega Semiconductor Inc.

2683 0.53
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AOTF12N30

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Tube - Active N-Channel MOSFET (Metal Oxide) 300 V 11.5A (Tc) 10V 420mOhm @ 6A, 10V 4.5V @ 250µA 16 nC @ 10 V ±30V 790 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF4185

AOTF4185

MOSFET P-CH 40V 34A TO220FL

Alpha & Omega Semiconductor Inc.

3390 0.53
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AOTF4185

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Tube - Active P-Channel MOSFET (Metal Oxide) 40 V 34A (Tc) 4.5V, 10V 16mOhm @ 20A, 10V 2.5V @ 250µA 55 nC @ 10 V ±20V 2550 pF @ 20 V - 33W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVTFS024N06CTAG

NVTFS024N06CTAG

MOSFET N-CH 60V 7A/24A 8WDFN

onsemi

2904 0.53
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Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta), 24A (Tc) 10V 22.6mOhm @ 3A, 10V 4V @ 20µA 5.7 nC @ 10 V ±20V 333 pF @ 30 V - 2.5W (Ta), 28W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQD9N25TM-F085

FQD9N25TM-F085

MOSFET N-CH 250V 7.4A DPAK

onsemi

145000 1.44
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Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, QFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 250 V 7.4A (Tc) 10V 420mOhm @ 3.7A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 700 pF @ 25 V - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUC40N08S5L140ATMA1

IAUC40N08S5L140ATMA1

MOSFET_(75V 120V( PG-TDSON-8

Infineon Technologies

2348 0.52
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IAUC40N08S5L140ATMA1

Datenblatt

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 40A (Tc) 4.5V, 10V 14mOhm @ 20A, 10V 2V @ 15µA 18.6 nC @ 10 V ±20V 1078 pF @ 40 V - 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ZVP4424ASTZ

ZVP4424ASTZ

MOSFET P-CH 240V 200MA E-LINE

Diodes Incorporated

3027 0.54
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ZVP4424ASTZ

Datenblatt

Tape & Box (TB) - Active P-Channel MOSFET (Metal Oxide) 240 V 200mA (Ta) 3.5V, 10V 9Ohm @ 200mA, 10V 2V @ 1mA - ±40V 200 pF @ 25 V - 750mW (Ta) -55°C ~ 150°C (TJ) Through Hole
DMT10H009LK3-13

DMT10H009LK3-13

MOSFET BVDSS: 61V~100V TO252 T&R

Diodes Incorporated

2091 0.54
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DMT10H009LK3-13

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 4.5V, 10V 9mOhm @ 20A, 10V 2.5V @ 250µA 20 nC @ 4.5 V ±20V 2309 pF @ 50 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMT10H009SK3-13

DMT10H009SK3-13

MOSFET BVDSS: 61V~100V TO252 T&R

Diodes Incorporated

3374 0.54
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DMT10H009SK3-13

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 91A (Tc) 10V 9.1mOhm @ 20A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 2028 pF @ 50 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMT10H9M9SK3-13

DMT10H9M9SK3-13

MOSFET BVDSS: 61V~100V TO252 T&R

Diodes Incorporated

2596 0.54
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Tape & Reel (TR) * Active - - - - - - - - - - - - - -
DMT10H9M9LK3-13

DMT10H9M9LK3-13

MOSFET BVDSS: 61V~100V TO252 T&R

Diodes Incorporated

2858 0.54
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Tape & Reel (TR) * Active - - - - - - - - - - - - - -
TJ10S04M3L(T6L1,NQ

TJ10S04M3L(T6L1,NQ

MOSFET P-CH 40V 10A DPAK

Toshiba Semiconductor and Storage

2501 0.54
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TJ10S04M3L(T6L1,NQ

Datenblatt

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 6V, 10V 44mOhm @ 5A, 10V 3V @ 1mA 19 nC @ 10 V +10V, -20V 930 pF @ 10 V - 27W (Tc) 175°C (TJ) Surface Mount
TJ15S06M3L(T6L1,NQ

TJ15S06M3L(T6L1,NQ

MOSFET P-CH 60V 15A DPAK

Toshiba Semiconductor and Storage

3931 0.54
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TJ15S06M3L(T6L1,NQ

Datenblatt

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 15A (Ta) 6V, 10V 50mOhm @ 7.5A, 10V 3V @ 1mA 36 nC @ 10 V +10V, -20V 1770 pF @ 10 V - 41W (Tc) 175°C (TJ) Surface Mount
TJ20S04M3L(T6L1,NQ

TJ20S04M3L(T6L1,NQ

MOSFET P-CH 40V 20A DPAK

Toshiba Semiconductor and Storage

2151 0.54
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TJ20S04M3L(T6L1,NQ

Datenblatt

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 20A (Ta) 6V, 10V 22.2mOhm @ 10A, 10V 3V @ 1mA 37 nC @ 10 V +10V, -20V 1850 pF @ 10 V - 41W (Tc) 175°C (TJ) Surface Mount
LND150N3-G-P002

LND150N3-G-P002

MOSFET N-CH 500V 30MA TO92-3

Microchip Technology

2963 0.54
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LND150N3-G-P002

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 30mA (Tj) 0V 1000Ohm @ 500µA, 0V - - ±20V 10 pF @ 25 V Depletion Mode 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
LND150N3-G-P013

LND150N3-G-P013

MOSFET N-CH 500V 30MA TO92-3

Microchip Technology

2360 0.54
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LND150N3-G-P013

Datenblatt

Tape & Box (TB) - Active N-Channel MOSFET (Metal Oxide) 500 V 30mA (Tj) 0V 1000Ohm @ 500µA, 0V - - ±20V 10 pF @ 25 V Depletion Mode 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
AON7240

AON7240

MOSFET N-CH 40V 19A/40A 8DFN

Alpha & Omega Semiconductor Inc.

2913 0.54
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AON7240

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 40A (Tc) 4.5V, 10V 5.1mOhm @ 20A, 10V 2.4V @ 250µA 35 nC @ 10 V ±20V 2200 pF @ 20 V - 3.1W (Ta), 36.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK2P90E,RQ

TK2P90E,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

3484 0.53
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TK2P90E,RQ

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 900 V 2A (Ta) 10V 5.9Ohm @ 1A, 10V 4V @ 200µA 12 nC @ 10 V ±30V 500 pF @ 25 V - 80W (Tc) 150°C Surface Mount
TSM3481CX6 RFG

TSM3481CX6 RFG

MOSFET P-CHANNEL 30V 5.7A SOT26

Taiwan Semiconductor Corporation

2682 0.54
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TSM3481CX6 RFG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 5.7A (Ta) 4.5V, 10V 48mOhm @ 5.3A, 10V 3V @ 250µA 18.09 nC @ 10 V ±20V 1047.98 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF730BPBF

IRF730BPBF

MOSFET N-CH 400V 6A TO220AB

Vishay Siliconix

2958 0.54
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Немедленный

IRF730BPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 311 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM2314CX RFG

TSM2314CX RFG

MOSFET N-CHANNEL 20V 4.9A SOT23

Taiwan Semiconductor Corporation

2745 0.54
- +

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Немедленный

TSM2314CX RFG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 4.9A (Tc) 1.8V, 4.5V 33mOhm @ 4.9A, 4.5V 1.2V @ 250µA 11 nC @ 4.5 V ±12V 900 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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