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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF9N90CT

FQPF9N90CT

MOSFET N-CH 900V 8A TO220F

onsemi

342 3.66
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FQPF9N90CT

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Tube QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V 1.4Ohm @ 4A, 10V 5V @ 250µA 58 nC @ 10 V ±30V 2730 pF @ 25 V - 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB13N50APBF

IRFB13N50APBF

MOSFET N-CH 500V 14A TO220AB

Vishay Siliconix

358 3.66
- +

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IRFB13N50APBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 450mOhm @ 8.4A, 10V 4V @ 250µA 81 nC @ 10 V ±30V 1910 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS9N60APBF

IRFS9N60APBF

MOSFET N-CH 600V 9.2A D2PAK

Vishay Siliconix

1000 3.67
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IRFS9N60APBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA11N80E-GE3

SIHA11N80E-GE3

MOSFET N-CH 800V 12A TO220

Vishay Siliconix

446 3.71
- +

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SIHA11N80E-GE3

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Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 440mOhm @ 5.5A, 10V 4V @ 250µA 88 nC @ 10 V ±30V 1670 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R210CFD7XKSA1

IPP60R210CFD7XKSA1

MOSFET N CH

Infineon Technologies

437 3.74
- +

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IPP60R210CFD7XKSA1

Datenblatt

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 64W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF644SPBF

IRF644SPBF

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix

176 3.76
- +

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IRF644SPBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ48RSPBF

IRFZ48RSPBF

MOSFET N-CH 60V 50A TO263

Vishay Siliconix

992 3.79
- +

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IRFZ48RSPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMT800120DC

FDMT800120DC

MOSFET N-CH 120V 20A 8DLCOOL88

onsemi

5875 7.00
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FDMT800120DC

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 120 V 20A (Ta), 129A (Tc) 6V, 10V 4.14mOhm @ 20A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 7850 pF @ 60 V - 3.2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN2R6-60PSQ

PSMN2R6-60PSQ

MOSFET N-CH 60V 150A TO220AB

Nexperia USA Inc.

4918 3.83
- +

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PSMN2R6-60PSQ

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 150A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 7629 pF @ 25 V - 326W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHG25N40D-GE3

SIHG25N40D-GE3

MOSFET N-CH 400V 25A TO247AC

Vishay Siliconix

127 3.88
- +

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SIHG25N40D-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 25A (Tc) 10V 170mOhm @ 13A, 10V 5V @ 250µA 88 nC @ 10 V ±30V 1707 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP125N65S3R0

FCP125N65S3R0

MOSFET N-CH 650V 24A TO220-3

onsemi

1039 3.90
- +

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FCP125N65S3R0

Datenblatt

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4.5V @ 2.4mA 46 nC @ 10 V ±30V 1940 pF @ 400 V - 181W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG180N60E-GE3

SIHG180N60E-GE3

MOSFET N-CH 600V 19A TO247AC

Vishay Siliconix

339 3.93
- +

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SIHG180N60E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 180mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA105N60EF-GE3

SIHA105N60EF-GE3

MOSFET N-CH 600V 29A TO220

Vishay Siliconix

1096 3.94
- +

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Немедленный

SIHA105N60EF-GE3

Datenblatt

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 102mOhm @ 13A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1804 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA46N15

FQA46N15

MOSFET N-CH 150V 50A TO3P

onsemi

361 3.94
- +

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Немедленный

FQA46N15

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 150 V 50A (Tc) 10V 42mOhm @ 25A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3250 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3703PBF

IRF3703PBF

MOSFET N-CH 30V 210A TO220AB

Infineon Technologies

2875 3.97
- +

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Немедленный

IRF3703PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 210A (Tc) 7V, 10V 2.8mOhm @ 76A, 10V 4V @ 250µA 209 nC @ 10 V ±20V 8250 pF @ 25 V - 3.8W (Ta), 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP200N055T2

IXTP200N055T2

MOSFET N-CH 55V 200A TO220AB

IXYS

128 3.98
- +

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Немедленный

IXTP200N055T2

Datenblatt

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 200A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 109 nC @ 10 V ±20V 6800 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
STF14NM50N

STF14NM50N

MOSFET N-CH 500V 12A TO220FP

STMicroelectronics

783 4.02
- +

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Немедленный

STF14NM50N

Datenblatt

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4V @ 100µA 27 nC @ 10 V ±25V 816 pF @ 50 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH165N60E

FCH165N60E

MOSFET N-CH 600V 23A TO247-3

onsemi

462 4.03
- +

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Немедленный

FCH165N60E

Datenblatt

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 165mOhm @ 11.5A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 2434 pF @ 380 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM60NB600CF C0G

TSM60NB600CF C0G

MOSFET N-CH 600V 8A ITO220S

Taiwan Semiconductor Corporation

3458 4.04
- +

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TSM60NB600CF C0G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 250µA 16 nC @ 10 V ±30V 528 pF @ 100 V - 41.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBC40GPBF

IRFIBC40GPBF

MOSFET N-CH 600V 3.5A TO220-3

Vishay Siliconix

133 4.08
- +

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Немедленный

IRFIBC40GPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Tc) 10V 1.2Ohm @ 2.1A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
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