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| Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SD5000N PDIP 16LQUAD HIGH SPEED N-CHANNEL LATERA |
919 | 6.89 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 4 N-Channel | Standard | 20V | 50mA (Ta) | 70Ohm @ 1mA, 5V | 1.5V @ 1µA | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
3N166 TO-99 6LMONOLITHIC DUAL, P-CHANNEL ENHAN |
3522 | 11.18 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 2 P-Channel (Dual) | Standard | 30V | 50mA (Ta) | 300Ohm @ 100µA, 20V | 5V @ 10µA | - | - | 300mW (Ta) | -55°C ~ 150°C | Through Hole |
|
3N165 TO-99 6LMONOLITHIC DUAL, P-CHANNEL ENHAN |
2320 | 11.81 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 2 P-Channel (Dual) | Standard | 40V | 50mA (Ta) | 300Ohm @ 100µA, 20V | 5V @ 10µA | - | - | 300mW (Ta) | -55°C ~ 150°C | Through Hole |
|
3N190 TO-78 7LMONOLITHIC DUAL, N-CHANNEL ENHAN |
196 | 12.43 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 2 P-Channel (Dual) | Standard | 40V | 50mA | 300Ohm @ 100µA, 20V | 5V @ 10µA | - | - | 525mW (Ta) | -55°C ~ 135°C (TJ) | Through Hole |
|
FPF1C2P5BF07AINSULATED GATE BIPOLAR TRANSISTO |
433 | 71.43 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 5 N-Channel (Solar Inverter) | Standard | 650V | 36A | 90mOhm @ 27A, 10V | 3.8V @ 250µA | - | - | 250W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
BSM250D17P2E004HALF BRIDGE MODULE CONSISTING OF |
3367 | 1180.80 |
ДобавитьНемедленный |
Datenblatt |
Box | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1700V (1.7kV) | 250A (Tc) | - | 4V @ 66mA | - | 30000pF @ 10V | 1800W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
FS45MR12W1M1B11BOMA1MOSFET MODULE 1200V 50A |
2950 | 147.28 |
ДобавитьНемедленный |
Datenblatt |
Tray | CoolSiC™+ | Last Time Buy | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
BSM080D12P2C008SIC POWER MODULE-1200V-80A |
2074 | 382.48 |
ДобавитьНемедленный |
Datenblatt |
Tray | - | Active | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 80A (Tc) | - | 4V @ 13.2mA | - | 800pF @ 10V | 600W | 175°C (TJ) | Chassis Mount |
|
|
BSM120D12P2C005MOSFET 2N-CH 1200V 120A MODULE |
2088 | 441.32 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 120A (Tc) | - | 2.7V @ 22mA | - | 14000pF @ 10V | 780W | -40°C ~ 150°C (TJ) | - |
|
SSM6L35FE,LMMOSFET N/P-CH 20V 0.18A/0.1A ES6 |
741 | 0.43 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | 150mW | 150°C (TJ) | Surface Mount |
|
ZXMC3F31DN8TAMOSFET N/P-CH 30V 6.8A/4.9A 8SO |
500 | 0.78 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N and P-Channel | Logic Level Gate, 4.5V Drive | 30V | 6.8A, 4.9A | 24mOhm @ 7A, 10V | 3V @ 250µA | 12.9nC @ 10V | 608pF @ 15V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
ZXMN6A09DN8TAMOSFET 2N-CH 60V 4.3A 8-SOIC |
2038 | 2.04 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 4.3A | 40mOhm @ 8.2A, 10V | 3V @ 250µA | 24.2nC @ 5V | 1407pF @ 40V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount |
|
ALD1115PALMOSFET N/P-CH 10.6V 8DIP |
2006 | 4.96 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N and P-Channel Complementary | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD110900APALMOSFET 2N-CH 10.6V 8DIP |
3253 | 7.12 |
ДобавитьНемедленный |
Datenblatt |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD110800APCLMOSFET 4N-CH 10.6V 16DIP |
2345 | 8.35 |
ДобавитьНемедленный |
Datenblatt |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
MSCSM120AM08CT3AGPM-MOSFET-SIC-SBD~-SP3F |
2459 | 529.47 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 7.8mOhm @ 160A, 20V | 2.8V @ 4mA | 928nC @ 20V | 12.08pF @ 1000V | 1.409kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount |
|
BSM180D12P2E0021200V, 204A, HALF BRIDGE, SILICO |
3883 | 811.80 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 204A (Tc) | - | 4V @ 35.2mA | - | 18000pF @ 10V | 1360W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
BSM300D12P3E005SILICON CARBIDE POWER MODULE. B |
2760 | 1645.72 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 300A (Tc) | - | 5.6V @ 91mA | - | 14000pF @ 10V | 1260W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
BSM600D12P3G0011200V, 576A, HALF BRIDGE, FULL S |
2330 | 2142.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 600A (Tc) | - | 5.6V @ 182mA | - | 31000pF @ 10V | 2450W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
FF2MR12KM1PHOSA1MEDIUM POWER 62MM |
3661 | 1070.68 |
ДобавитьНемедленный |
Datenblatt |
Tray | CoolSiC™ | Last Time Buy | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 500A (Tc) | 2.13mOhm @ 500A, 15V | 5.15V @ 224mA | 1340nC @ 15V | 39700pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount |
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